Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: A manufacturing method of a display device, includes: a first step of collectively transferring light-emitting elements arranged at every specified number of light-emitting elements formed and arranged on a first substrate to a transfer area set on a second substrate; and a second step of transferring light-emitting elements remaining on the first substrate to between the plural light-emitting elements mounted on the second substrate in at least one of a state where the first substrate is moved with respect to the transfer area on the second substrate and a state where the first substrate is rotated in a plane.

Abstract: A method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: A method of transferring a device includes the steps of: arranging a first substrate, on which a device is provided with a release layer having a planar shape equal to or smaller than the device interposed therebetween, and a second substrate, on which an adhesive layer is provided, so as to be spaced from and opposite each other in a state where the device and the adhesive layer face each other; and irradiating a laser beam having an irradiation area larger than the base area of the release layer onto the entire surface of the release layer from the first substrate side so as to ablate the release layer, to separate the device from the first substrate, and to transfer the device on the second substrate.

Abstract: A device transfer method and a display apparatus are provided. A device transfer method and a display apparatus are provided by or in which, in transferring devices arranged on a substrate onto another substrate, it is possible to easily strip the substrate after the transfer of the devices, to lower the possibility of damaging of the substrate, and to additionally transfer devices onto the same substrate after the transfer of the devices. A plurality of devices arranged on a temporary holding substrate are embedded into and held in a pressure sensitive adhesive layer formed on a transfer substrate, and the devices are stripped from the temporary holding substrate. Other devices are further additionally embedded into the pressure sensitive adhesive layer before hardening the pressure sensitive adhesive layer, whereby the devices can be arranged on a transfer substrate having a large area.

Abstract: A method of repairing a defective one of devices mounted on substrate is provided. Devices are arrayed on a substrate and electrically connected to wiring lines connected to a drive circuit, to be thus mounted on the substrate. The devices mounted on the substrate are then subjected to an emission test. If a defective device is detected in this test, a repair device is mounted at a position corresponding to a position of the defective device. At this time, after wiring lines connected to the defective device are cut off, the repair device is electrically connected to portions of the wiring lines, the portions of the wiring lines being located at positions nearer to the drive circuit side than the cut-off positions of the wiring lines.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: A method of transferring a device includes the steps of: arranging a first substrate, on which a device is provided with a release layer having a planar shape equal to or smaller than the device interposed therebetween, and a second substrate, on which an adhesive layer is provided, so as to be spaced from and opposite each other in a state where the device and the adhesive layer face each other; and irradiating a laser beam having an irradiation area larger than the base area of the release layer onto the entire surface of the release layer from the first substrate side so as to ablate the release layer, to separate the device from the first substrate, and to transfer the device on the second substrate.

Abstract: A manufacturing method of a display device, includes: a first step of collectively transferring light-emitting elements arranged at every specified number of light-emitting elements formed and arranged on a first substrate to a transfer area set on a second substrate; and a second step of transferring light-emitting elements remaining on the first substrate to between the plural light-emitting elements mounted on the second substrate in at least one of a state where the first substrate is moved with respect to the transfer area on the second substrate and a state where the first substrate is rotated in a plane.

Abstract: A device transfer method is provided. The device transfer method is disclosed by which, when a laser ablation technique is used to selectively exfoliate devices arranged on a substrate, the energy is transmitted efficiently to transfer the devices with a high degree of accuracy and at a high speed. A laser irradiation apparatus is used which includes a laser light source for generating a laser beam, a reflection section for reflecting the laser beam toward a required direction, and a control section for controlling whether or not the laser beam is to be irradiated in an interlocking relationship with the reflection section. The laser beam is selectively irradiated on a plurality of devices arranged on a transfer source substrate to cause laser ablation such that the selected devices are transferred to a transfer destination substrate by the selective laser ablation.

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract: A method of repairing a defective one of devices mounted on substrate is provided. Devices are arrayed on a substrate and electrically connected to wiring lines connected to a drive circuit, to be thus mounted on the substrate. The devices mounted on the substrate are then subjected to an emission test. If a defective device is detected in this test, a repair device is mounted at a position corresponding to a position of the defective device. At this time, after wiring lines connected to the defective device are cut off, the repair device is electrically connected to portions of the wiring lines, the portions of the wiring lines being located at positions nearer to the drive circuit side than the cut-off positions of the wiring lines.

Abstract: A display apparatus is provided. In the display apparatus, a plurality of light emitting devices are mounted in an orderly arranged state, mending light emitting devices capable of light emission are disposed directly above the failed ones of the plurality of light emitting devices, whereby the portions of the failed ones of the plurality of light emitting devices can be mended (repaired), and it is possible to eliminate dark spot defects in use of the display apparatus.

Abstract: An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

Abstract: Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.

Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.

Abstract: Disclosed are a semiconductor light emitting device capable of enhancing a light emergence efficiency at a lower light emergence plane of the device by forming an electrode on a halfway area of a tilt crystal plane and a fabrication method thereof. According to this light emitting device, since light emitted by a light emitting region can be efficiently, totally reflected and a current can be injected only in a good crystalline region for the reason that the halfway area, on which the electrode is formed, of the tilt crystal plane is better in crystallinity than other regions of the tilt crystal plane, it is possible to enhance both a light emergence efficiency and a luminous efficiency, and hence to enhance the light emergence efficiency by an input current.