Abstract: A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.

Abstract: A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.

Abstract: A gas injector used for semiconductor equipment includes a housing shell, a rotating main shaft and a gas output distribution unit. The rotating main shaft is covered with the housing shell, and includes a plurality of magnetic fluid seals and a plurality of gas transmission tubes. The gas output distribution unit is coupled to a top end of the rotating main shaft, the gas output distribution unit being connected to a ceiling and a susceptor. The gas output distribution unit includes a plurality of boards spaced at intervals between the ceiling and the susceptor, thereby resulting in a plurality of gas output layers for outputting corresponding reaction gases.

Abstract: A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Abstract: A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.

Abstract: A vapor phase film deposition apparatus comprises a susceptor where a plurality of substrates is placed thereon; and an opposing face member disposed opposite to the susceptor. The opposing face member includes a plurality of raised portions which protrude toward the susceptor to define at least one flow channel. A reaction gas flows through the flow channel and deposits on the plurality of substrates. At least one of the plurality of raised portions includes a heat insulation structure. The vapor phase film deposition apparatus further comprising a heating element disposed on one side of the susceptor, which is opposite to the opposing face member.

Abstract: The present invention is directed to an assembling device used for semiconductor equipment. The assembling device includes a chamber lid, a ceiling, a suspension part, a driving part and receptacles. The ceiling is disposed below the chamber lid. The suspension part is inserted through the chamber lid, and to be hooked to the ceiling. The driving part is disposed above the chamber lid and connected to the suspension part, and configured to drive the suspension part to join or separate the ceiling and the chamber lid. The receptacles are disposed in the ceiling and configured to be correspondingly attached to the suspension part, each of the receptacles defines a rotating groove that is open at top and closed at bottom.

Abstract: A chemical vapor deposition apparatus comprises a ballast gas source and a mass flow controller, wherein the ballast gas source is arranged at an upstream side of a separating device, and the pressure in a reaction chamber is controlled by a flow rate of the ballast gas. Since the space between the reaction chamber and the node connected with the ballast gas source is small, a pressure response of the reaction chamber can be speeded up.

Abstract: A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Abstract: A gas injector used for semiconductor equipment includes a housing shell, a rotating main shaft and a gas output distribution unit. The rotating main shaft is covered with the housing shell, and includes a plurality of magnetic fluid seals and a plurality of gas transmission tubes. The gas output distribution unit is coupled to a top end of the rotating main shaft, the gas output distribution unit being connected to a ceiling and a susceptor. The gas output distribution unit includes a plurality of boards spaced at intervals between the ceiling and the susceptor, thereby resulting in a plurality of gas output layers for outputting corresponding reaction gases.

Abstract: A chemical vapor deposition apparatus comprises a ballast gas source and a mass flow controller, wherein the ballast gas source is arranged at an upstream side of a separating device, and the pressure in a reaction chamber is controlled by a flow rate of the ballast gas. Since the space between the reaction chamber and the node connected with the ballast gas source is small, a pressure response of the reaction chamber can be speeded up.

Abstract: A gas injector includes a base plate, a channel cover plate disposed above the base plate, and a plurality of separating plates disposed between the base plate and the channel cover plate. The separating plates are separated from each other to define a plurality of channels with space for transferring reactant gas from a center of the base plate towards a periphery of the base plate, thereby defining gas outlets associated with the channels from which reactant gas is ejected towards a wafer.

Abstract: The invention provides a gas distribution apparatus or injector in a reaction chamber comprising multiple diffusion plates arranged substantially parallel and at least one bump with slopes and substantially flat top/bottom surface to introduce at least two different reaction gases horizontally and separately into the reaction chamber while preventing condensation of adduct formed due to mixture of the reaction gases at a low temperature by avoiding back diffusion. Meanwhile any turbulence or vortex of the reaction gases is not caused because slope shape is formed at the bump.

Abstract: A gas injector includes a base plate, a center sleeve cover, an intake body, an inner cover and an outer cover. The base plate includes a plurality of channels. The center sleeve cover is operatively coupled with the base plate to form a first cavity, a wall of the center sleeve cover having a plurality of first communicating openings correspondingly connected to first channels. The intake body includes a top portion, an inner wall and an outer wall. The inner cover is disposed between the center sleeve cover and the inner wall to result in a second cavity, the inner cover having a plurality of second communicating openings correspondingly connected to second channels. The outer cover is disposed between the inner wall and the outer wall to result in a third cavity, the outer cover having a plurality of third communicating openings correspondingly connected to third channels.

Abstract: The invention provides a gas injector and cover plate assembly comprising a cover plate, a gas injector and a ceiling. The cover plate comprises a plurality of cooling fluid channels. The gas injector is configured to be located on the cover plate comprising a gas distributor, a fluid-cooling gas transmitter, a plurality of gas spraying plates and a conducting cone. The gas distributor distributes a plurality of gases and a gas transmitter cooling fluid. The gas distributor comprises a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form a plurality of cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Abstract: The present invention is directed to an assembling device used for semiconductor equipment. The assembling device includes a chamber lid, a ceiling, a suspension part and a driving part. The ceiling is disposed below the chamber lid. The suspension part is inserted through the chamber lid, and to be hooked to the ceiling. The driving part is disposed above the chamber lid and connected to the suspension part, and configured to drive the suspension part to join or separate the ceiling and the chamber lid. The driving part has an elevating unit and a rotating unit. The elevating unit and the rotating unit are respectively configured to elevate and rotate the suspension part.

Abstract: The present invention is directed to an assembling device used for semiconductor equipment. The assembling device includes a chamber lid, a ceiling, a suspension part, a driving part and receptacles. The ceiling is disposed below the chamber lid. The suspension part is inserted through the chamber lid, and to be hooked to the ceiling. The driving part is disposed above the chamber lid and connected to the suspension part, and configured to drive the suspension part to join or separate the ceiling and the chamber lid. The receptacles are disposed in the ceiling and configured to be correspondingly attached to the suspension part, each of the receptacles defines a rotating groove that is open at top and closed at bottom.

Abstract: A gas injector and cover plate assembly includes a cover plate, a gas injector and a ceiling. The cover plate includes cooling fluid channels. The gas injector is configured to be located on the cover plate, and includes a gas distributor, a fluid-cooling gas transmitter, gas spraying plates and a conducting cone. The gas distributor distributes gases and a gas transmitter cooling fluid. The gas distributor includes a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Abstract: The invention provides a gas injector and cover plate assembly comprising a cover plate, a gas injector and a ceiling. The cover plate comprises a plurality of cooling fluid channels. The gas injector is configured to be located on the cover plate comprising a gas distributor, a fluid-cooling gas transmitter, a plurality of gas spraying plates and a conducting cone. The gas distributor distributes a plurality of gases and a gas transmitter cooling fluid. The gas distributor comprises a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form a plurality of cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Abstract: A wafer holder includes a holder main body, a supporting member, and a limiting member. The holder main body has a through hole region. The supporting member has a supporting main body and supporting legs. The supporting main body is disposed on an inner surface of the through hole region, and the supporting legs are attached to an inner surface of the supporting main body and configured to support a wafer. The limiting member is attached to the supporting main body and disposed between two adjacent supporting legs and opposite to a flat side of the wafer.