Abstract: An electronic system including an image sensor, a face detection engine, an eye detection engine and an eye protection engine is provided. The image sensor captures an image. The face detection engine recognizes a user face in the image. The eye detection engine recognizes user eyes in the image. The eye protection engine turns off a display device when the user eyes are recognized in the image but the user face is not recognized in the image.

Abstract: A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.

Abstract: A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.

Abstract: A character recognition method includes the following operations: determining that the image of character to be identified corresponds to a matching character of several registered characters according to several vector distances to be identified between a vector of an image of character to be identified and several vectors of several registered character images of several registered characters, and storing a matching vector distance between the vector of the image of character to be identified and a vector of the matching character by a processor; and storing a data of the matching character according to the image of character to be identified when the matching vector distance is less than a vector distance threshold by the processor.

Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

Abstract: A layout of a semiconductor memory device includes a substrate and a ternary content addressable memory (TCAM). The TCAM is disposed on the substrate and includes a plurality of TCAM bit cells, where at least two of the TCAM bit cells are mirror-symmetrical along an axis of symmetry, and each of the TCAM bit cells includes two storage units electrically connected to two word lines respectively, and a logic circuit electrically connected to the storage units. The logic circuit includes two first reading transistors, and two second reading transistors, where each of the second reading transistors includes a gate and source and drain regions, the source and drain regions of the second reading transistors are electrically connected to two matching lines and the first reading transistors, respectively, where the word lines are disposed parallel to and between the matching lines.

Abstract: A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. The gate dielectric layer is over the insulating layer and the channel layer. The gate electrode is over the gate dielectric layer and between the source/drain contacts.

Abstract: A touch screen (500) can include electrodes (520, 540) (e.g., first and second touch electrodes, reference electrodes) on opposite sides (e.g., top and bottom) of a substrate (510). In some examples, vias (618, 638) can be used to couple the touch electrodes (520, 540) to conductive connections (518, 538) of flex circuits (502, 522) such that the connections (604, 624) to the flex circuits (502, 522) can be on the same side of the substrate (510) even if the touch electrodes (520, 540) are on opposite sides of the substrate (510). The conductive filling material of the via (618) can make direct contact with the conductive connections (604, 624) of the flex circuits (502, 522), for example.

Abstract: An electronic system including a display device, an image sensor, a face detection engine, an eye detection engine and an eye protection engine is provided. The image sensor captures an image. The face detection engine recognizes a user face in the image. The eye detection engine recognizes user eyes in the image. The eye protection engine turns off the display device when the user eyes are recognized in the image but the user face is not recognized in the image.

Abstract: A method for training a deep learning network for face recognition includes: utilizing a face landmark detector to perform face alignment processing on at least one captured image, thereby outputting at least one aligned image; inputting the at least one aligned image to a teacher model to obtain a first output vector; inputting the at least one captured image a student model corresponding to the teacher module to obtain a second output vector; and adjusting parameter settings of the student model according to the first output vector and the second output vector.

Abstract: The present invention provides a motion detecting system, which includes a light source module, a plurality of image sensors and a control unit. The light source module illuminates at least one object. The image sensors respectively detect the object under the light emitted by the light source module to generate a plurality of detection results. The control unit is coupled to the image sensors, and generates a control command according to the detection results.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

Abstract: A display may have one or more bent portions. To increase the magnitude of curvature in a display and/or to allow for compound curvature in the display, a display panel may be partially formed in a planar state. The partial display panel is then bent to have desired curvature. After the partial display panel is bent, additional display components that are susceptible to damage during the bending process may be added to complete the display panel. A flexible printed circuit may be formed directly on the display panel using precise deposition of conductive material. By forming the flexible printed circuit layer-by-layer directly on the display panel, no substantive pressure needs to be applied to the display panel. Electrical connections may therefore be made to the display panel in regions of the display with high levels of curvature and/or with compound curvature without causing front-of-screen artifacts for the display panel.

Abstract: Conductive traces may be conformally wrapped around the side of a display panel that includes an array of display pixels. The conductive traces may electrically connect contacts on an upper surface of the display panel to corresponding contacts on a flexible printed circuit that is attached to a lower surface of the display panel. The side-wrapped conductive traces may be interposed between first and second insulating layers. The flexible printed circuit may have a multi-step interface that is electrically connected to the side-wrapped conductive traces. A system-in-package including a display driver integrated circuit may be mounted to the flexible printed circuit. The system-in-package may include a plurality of redistribution layers that electrically connect contacts on the display driver integrated circuit to contacts on the flexible printed circuit.

Abstract: A method for image compression and a circuit system thereof are provided. In the method, pixel values of an image are obtained. A compression scenario is decided, for example, a uniform-quantization manner or a non-uniform-quantization manner is used for an M-bit image being compressed to an N-bit image so as to decide codeword sections for the image. Every codeword section has a codeword distance. The codeword sections have a fixed codeword distance in the uniform-quantization manner. Alternatively, in the non-uniform-quantization manner, the image can be divided into multiple codeword sections having different codeword distances according to a brightness distribution. Afterwards, a random number is generated for deciding codeword and index for original value of each of the pixels. An index table is accordingly formed. The index table is provided for obtaining the codeword in a decoding process by querying a codebook with the index.

Abstract: A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.

Abstract: A semiconductor device includes a plurality of semiconductor layers arranged one above another, and source/drain epitaxial regions on opposite sides of the plurality of semiconductor layers. The semiconductor device further includes a gate structure surrounding each of the plurality of semiconductor layers. The gate structure includes interfacial layers respectively over the plurality of semiconductor layers, a high-k dielectric layer over the interfacial layers, and a gate metal over the high-k dielectric layer. The gate structure further includes gate spacers spacing apart the gate structure from the source/drain epitaxial regions. A top position of the high-k dielectric layer is lower than top positions of the gate spacers.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.