Patents by Inventor Tsuneaki Ohashi

Tsuneaki Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6756132
    Abstract: A joined structure includes a metal terminal, a ceramic member and a joining layer between the metal terminal and the ceramic member. The joining layer includes a metal adhesive layer containing at least indium metal. The invention further provides a joined structure including a metal member, a ceramic member, and a joining layer. The metal member includes a tip face and a side face. A hollow portion is formed in the ceramic member. The joining layer is formed between a bottom surface facing the hollow portion and the tip face of member, and further formed between a side wall surface facing the hollow portion and the side face of the metal member. The joining layer also includes a metal adhesive layer containing at least indium metal.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: June 29, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Tomoyuki Fujii, Mitsuru Ohta, Tsuneaki Ohashi
  • Patent number: 6749930
    Abstract: A corrosion-resistive member is provided, including a corrosion-resistive face that is exposed to a corrosive gas causing ion bombardmemt. At least a part of the corrosion-resistive member is composed of a sintered silicon nitride body having an open porosity of not more than 5%. The sintered silicon nitride body constitutes the corrosion-resistive face, and if two auxiliary planes are formed by cutting the corrosion-resistive member to intersect vertically with the corrosion-resistive face and to be located vertically with respect to each other, the orientation index between the two auxiliary planes is in a range of 0.8 to 1.2, and the orientation index between the corrosion-resistive face and each of the auxiliary faces is at least 1.5.
    Type: Grant
    Filed: October 18, 2001
    Date of Patent: June 15, 2004
    Assignee: NGK Insulators, Ltd.
    Inventor: Tsuneaki Ohashi
  • Publication number: 20040067392
    Abstract: The invention provides a film of an yttria-alumina complex oxide having a high peel strength with respect to a substrate. A mixed powder of powdery materials of yttria and alumina is sprayed on a substrate to form a sprayed film made of an yttria-alumina complex oxide. Preferably, the powdery material of yttria has a 50 percent mean particle diameter of not smaller than 0.1 &mgr;m and not larger than 100 &mgr;m, and the powdery material of alumina has a 50 percent mean particle diameter of not smaller than 0.1 &mgr;m and not larger than 100 &mgr;m. Preferably, the yttria-alumina complex oxide contains at least a garnet phase, and may further contain a perovskite phase.
    Type: Application
    Filed: August 4, 2003
    Publication date: April 8, 2004
    Applicant: NGK Insulators, Ltd.
    Inventors: Hirotake Yamada, Tsuneaki Ohashi
  • Patent number: 6706428
    Abstract: A ceramic sintered body has a dense portion and a porous portion. The dense portion is formed from sintered ceramic fine particles, and the porous portion is formed from sintered ceramic coarse particles. The fine particles and coarse particles are simultaneously subjected to pressure sintering to form the dense portion and porous portion.
    Type: Grant
    Filed: January 28, 2002
    Date of Patent: March 16, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Hiromichi Kobayashi, Tsuneaki Ohashi, Toshio Oda, Hiroshi Furukubo
  • Patent number: 6667264
    Abstract: A silicon nitride sintered material includes a polycrystal material having silicon nitride crystal grains and a grain boundary phase. The sintered material contains a Yb element in an amount of 2 to 30% by weight in terms of its oxide and an Al element in an amount of 1 to 20% by weight in terms of its oxide and has a thermal conductivity of 40 W/mK or less at room temperature, a resistivity of 1×105to 1×1012 &OHgr;·cm at room temperature, and a porosity of 0.5% or less.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: December 23, 2003
    Inventors: Kiyoshi Araki, Tsuneaki Ohashi, Katsuhiro Inoue, Masaaki Masuda
  • Patent number: 6641941
    Abstract: The invention provides a film of an yttria-alumina complex oxide having a high peel strength with respect to a substrate. A mixture of powdery yttria and alumina materials is sprayed on a substrate to form a sprayed yttria-alumina complex oxide film. Preferably, the powdery yttria material has a 50 percent mean particle diameter in a range of 0.1 &mgr;m to 100 &mgr;m, and the powdery alumina material has a 50 percent mean particle diameter in a range of 0.1 &mgr;m to 100 &mgr;m. Preferably, the yttria-alumina complex oxide contains at least garnet phase, and may further contain perovskite phase.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: November 4, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Hirotake Yamada, Tsuneaki Ohashi
  • Patent number: 6632549
    Abstract: This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.
    Type: Grant
    Filed: July 17, 2000
    Date of Patent: October 14, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Kiyoshi Araki, Sadanori Shimura, Yuji Katsuda
  • Publication number: 20030148870
    Abstract: A silicon nitride sintered material includes a polycrystal material having silicon nitride crystal grains and a grain boundary phase. The sintered material contains a Yb element in an amount of 2 to 30% by weight in terms of its oxide and an Al element in an amount of 1 to 20% by weight in terms of its oxide and has a thermal conductivity of 40 W/mK or less at room temperature, a resistivity of 1×105 to 1×1012 &OHgr;·cm at room temperature, and a porosity of 0.5% or less.
    Type: Application
    Filed: December 20, 2002
    Publication date: August 7, 2003
    Applicant: NGK Insulators, Ltd.
    Inventors: Kiyoshi Araki, Tsuneaki Ohashi, Katsuhiro Inoue, Masaaki Masuda
  • Patent number: 6562183
    Abstract: To prevent an exposed surface of an anticorrosive part for an etching apparatus from being corroded, even when a highly corrosive etching gas such as a chlorine-based or fluorine-based plasma gas is used, an anticorrosive part for the etching apparatus for effecting etching treatment is provided. The anticorrosive part includes an anticorrosive part substrate, and a film of silicon carbide covering that surface of the anticorrosive part substrate which is to be exposed to an etching gas, wherein the silicon carbide film is made of polycrystals of silicon carbide having a 3C crystalline system, and (111) planes of the silicon carbide polycrystals are oriented in parallel to the surface of the silicon carbide film.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: May 13, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Hirotake Yamada, Sadanori Shimura, Tsuneaki Ohashi
  • Publication number: 20030064225
    Abstract: A diamond-coated member includes a basal material such as aluminum nitride, and a diamond thin film coating at least one part of a surface of the basal material, being adhered thereto, and has corrosion-erosion resistance. Adhesion strength between the thin film and the basal material is 15 MPa or more.
    Type: Application
    Filed: February 8, 2002
    Publication date: April 3, 2003
    Applicant: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Makoto Murai, Hiromichi Kobayashi
  • Patent number: 6541406
    Abstract: A silicon nitride sintered material includes a polycrystal material having silicon nitride crystal grains and a grain boundary phase. The sintered material contains a Yb element in an amount of 2 to 30% by weight in terms of its oxide and an Al element in an amount of 1 to 20% by weight in terms of its oxide and has a thermal conductivity of 40 W/mK or less at room temperature, a resistivity of 1×105 to 1×1012 &OHgr;·cm at room temperature, and a porosity of 0.5% or less.
    Type: Grant
    Filed: October 4, 2000
    Date of Patent: April 1, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Kiyoshi Araki, Tsuneaki Ohashi, Katsuhiro Inoue, Masaaki Masuda
  • Publication number: 20030059653
    Abstract: An object of the invention is to provide a film of an yttria-alumina complex oxide having a high peel strength of the film to a substrate. A mixed powder of powdery materials of yttria and alumina is sprayed on a substrate to form a sprayed film made of an yttria-alumina complex oxide. Preferably, the powdery material of yttria has a 50 percent mean particle diameter of not smaller than 0.1 &mgr;m and not larger than 100 &mgr;m, and the powdery material of alumina has a 50 percent mean particle diameter of not smaller than 0.1 &mgr;m and not larger than 100 &mgr;m. Preferably, the yttria-alumina complex oxide contains at least garnet phase, and may further contain perovskite phase.
    Type: Application
    Filed: July 17, 2002
    Publication date: March 27, 2003
    Applicant: NGK Insulators, Ltd.
    Inventors: Hirotake Yamada, Tsuneaki Ohashi
  • Publication number: 20030027706
    Abstract: An object of the invention is to integrate porous ceramics and dense ceramics with an adequately high bonding strength.
    Type: Application
    Filed: January 28, 2002
    Publication date: February 6, 2003
    Applicant: NGK Insulators, Ltd.
    Inventors: Hiromichi Kobayashi, Tsuneaki Ohashi, Toshio Oda, Hiroshi Furukubo
  • Patent number: 6486084
    Abstract: A composite material has a quartz glass phase and a complex compound phase compounded with the quartz glass phase, which is made of one or more compounds selected from a group of silicon carbide, silicon nitride, silicon, titanium nitride and titanium carbide, as a main ingredient. The composite material can be used instead of quartz glass, and can prevent the generations of microcrack, tipping and particles after the mechanical working.
    Type: Grant
    Filed: February 20, 2001
    Date of Patent: November 26, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Toshio Oda, Hiromichi Kobayashi, Tsuneaki Ohashi, Shinji Kawasaki
  • Patent number: 6486542
    Abstract: A semiconductor-supporting device comprising a substrate made of an insulating material, a conductive member buried in the substrate, and a terminal connected to the conductive member and made of an electrically conductive metallic matrix-ceramic composite body.
    Type: Grant
    Filed: July 27, 1999
    Date of Patent: November 26, 2002
    Assignee: NGK Insulators, Ltd
    Inventors: Tsuneaki Ohashi, Tomoyuki Fujii
  • Patent number: 6479174
    Abstract: A silicon carbide body includes polycrystals of silicon carbide, and has a purity of silicon carbide of not less than 99.9999 wt %, a relative density of not less than 99% and a ratio of silicon of not less than 70.12 wt %.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: November 12, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Hirotake Yamada, Makoto Murai, Hiroshi Furukubo, Tsuneaki Ohashi
  • Publication number: 20020139473
    Abstract: An electrostatic chuck having a bonded structure comprising a ceramic electrostatic chuck member, a metal member and a bonding layer; the bonding layer having at least a first most outer bonding layer being joined to the ceramic electrostatic chuck member, a second most outer bonding layer being joined to the metal member, and a polyimide layer as an intermediate layer disposed between the first and second most outer bonding layers, and each of the most outer bonding layers being made of a silicone layer or an acrylic layer, and a method for manufacturing the same are provided: the bonding layer being excellent in airtightness, bonding strength, and corrosion resistance, free from bleeding of a bonding material even under high pressures at time of joining, and the junction body being good in heat conductivity, and having a good flatness of its adsorption surface, with a small deformation due to temperature change.
    Type: Application
    Filed: January 10, 2002
    Publication date: October 3, 2002
    Applicant: NGK Insulators, Ltd.
    Inventors: Tomoyuki Fujii, Tsuneaki Ohashi
  • Publication number: 20020139563
    Abstract: The object of the invention is to join a ceramic member and a metal member with a sufficiently high bonding strength and to prevent cracks in a ceramic material constituting the ceramic member. A joined structure of a metal terminal 8 and a ceramic member 1 has a joining layer 12 between the terminal 8 and the ceramic member 1. The joining layer 12 has a metal adhesive layer 6 containing at least metal indium. The invention further provides a joined structure of a metal member 8 and a ceramic member 1. The metal member has a tip face 8a and a side face 8b. A hollow 4 is formed in the ceramic member 1. A joining layer 12 is formed between a bottom surface 4a facing the hollow 4 and the tip face 8a of the member 8, and further formed between a side wall surface 4b facing the hollow 4 and the side face 8b of the member 8. The joining layer 12 has a metal adhesive layer 6 containing at least metal indium.
    Type: Application
    Filed: March 27, 2002
    Publication date: October 3, 2002
    Applicant: NGK Insulators, Ltd.
    Inventors: Tomoyuki Fujii, Mitsuru Ohta, Tsuneaki Ohashi
  • Patent number: 6447626
    Abstract: A novel method for joining aluminum nitride-series substrates to each other is provided in the substantial absence of an intervening third layer at the joining interface between the substrates. In the method, the aluminum nitride-series substrates are joined to each other by interposing a joining agent between the substrates heating the substrates and the joining agent to a first temperature range of at least the melting point of the joining agent to melt the joining agent and liquefy particles of the aluminum nitride at the neighborhood of the interfaces between the melted joining agent and the substrates, and then heating the joining agent and the substrates to a temperature range higher than the temperature range of the first process but lower than the melting point of the substrates to exhaust the joining agent from between the substrates.
    Type: Grant
    Filed: December 15, 1999
    Date of Patent: September 10, 2002
    Assignee: NGK Insulators, Ltd.
    Inventor: Tsuneaki Ohashi
  • Patent number: 6436545
    Abstract: A joint body according to the invention is strong for a heat cycle and generates no local cracks. The joint body has the following features. An end portion of the metal member and the ceramic member are connected via a metal connection portion. The metal connection portion has a metallized layer formed on the ceramic member and a brazing connection portion interposing at least between the metallized layer and an end portion of the metal member. A melt point of a brazing member constructing the brazing connection portion is lower than that of a brazing member constructing the metallized layer.
    Type: Grant
    Filed: January 25, 2000
    Date of Patent: August 20, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Nobuyuki Tanahashi, Tomoyuki Fujii, Tsuneaki Ohashi