Patents by Inventor Tsuneaki Ohashi

Tsuneaki Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020109121
    Abstract: A corrosion-resistive member, includes a corrosion-resistive face which is to be exposed to a corrosive gas causing ion bombardment. At least a part of the corrosion-resistive member is composed of a sintered body of silicon nitride having an open porosity of not more than 5%. The silicon nitride sintered body constitutes the corrosion-resistive face, said corrosion-resistive member having a characteristic that if two auxiliary planes are formed by cutting the corrosion-resistive member to intersect vertically with said corrosion-resistive face and to be located vertically to each other, said two auxiliary planes satisfy the following orientation index between said two auxiliary planes being not less than 0.8 and not more than 1.2, and the following orientation index between the corrosion-resistive face and each of the auxiliary faces being not less than 1.5.
    Type: Application
    Filed: October 18, 2001
    Publication date: August 15, 2002
    Applicant: NGK Insulators, Ltd.
    Inventor: Tsuneaki Ohashi
  • Patent number: 6365460
    Abstract: A method for producing a silicon carbide body, includes the steps of forming a silicon carbide mass by chemical vapor deposition, and thermally treating the silicon carbide mass under vacuum or in an inert gas atmosphere at a temperature not less than 2000° C., the silicon carbide article having an electric resistivity higher than that of the silicon carbide mass having not been thermally treated.
    Type: Grant
    Filed: December 13, 1999
    Date of Patent: April 2, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Hirotake Yamada, Makoto Murai, Hiroshi Furukubo, Yasufumi Aihara, Tsuneaki Ohashi
  • Publication number: 20020018921
    Abstract: A halogen gas plasma-resistant member to be exposed to a halogen gas plasma, includes a main body of said member, and a corrosion-resistant film formed at least a surface of said main body, wherein a peeling resistance of the corrosive film to said main body is not less than 15 MPa.
    Type: Application
    Filed: April 16, 2001
    Publication date: February 14, 2002
    Applicant: NGK Insulators, Ltd.
    Inventors: Hirotake Yamada, Yuji Katsuda, Tsuneaki Ohashi, Masaaki Masuda, Masashi Harada, Hiroyuki Iwasaki, Shigenori Ito
  • Patent number: 6328198
    Abstract: This invention relates to a method of manufacturing joint body constructed of at lest one pair of substrates comprising a aluminum matrix composite which is made up of an aluminum or aluminum alloy matrix and a reinforcing ceramic, by using an infiltrating material made up of an aluminum alloy.
    Type: Grant
    Filed: April 23, 1999
    Date of Patent: December 11, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Tomoyuki Fujii
  • Publication number: 20010025001
    Abstract: A composite material has a quartz glass phase and a complex compound phase compounded with the quartz glass phase, which is made of one or more compounds selected from a group of silicon carbide, silicon nitride, silicon, titanium nitride and titanium carbide, as a main ingredient. The composite material can be used instead of quartz glass, and can prevent the generations of microcrack, tipping and particles after the mechanical working.
    Type: Application
    Filed: February 20, 2001
    Publication date: September 27, 2001
    Applicant: NGK Insulators, Ltd.
    Inventors: Toshio Oda, Hiromichi Kobayashi, Tsuneaki Ohashi, Shinji Kawasaki
  • Patent number: 6294771
    Abstract: A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.
    Type: Grant
    Filed: January 3, 2001
    Date of Patent: September 25, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Yuji Katsuda, Kiyoshi Araki, Tsuneaki Ohashi
  • Patent number: 6268069
    Abstract: A process is disclosed for producing a joined article between a ceramic member and another member, which process includes the steps of brazing the ceramic member with another member by using a brazing material composed of 50 to 99 wt % of copper, 0.5 to 20 wt % of aluminum, 0.5 to 5 wt % of at least one kind of active metal selected from the group consisting of titanium, zirconium, hafnium, vanadium and niobium, thereby obtaining a joined body including the ceramic member, another member and a layer of the brazing material, and heating the brazing material layer in an oxidative atmosphere.
    Type: Grant
    Filed: March 18, 1999
    Date of Patent: July 31, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Tomoyuki Fujii
  • Patent number: 6261708
    Abstract: A novel method is provided for joining substrates made of aluminum nitride series ceramics to each other, which can perform the joining substantially without leaving an intervening third phase other than aluminum nitride series ceramics at the joining interface of the substrates. The method is performed, for example, by providing a joining agent 3 containing at least an aluminum nitride series ceramics and a flux between the substrates 1 and 2, heat treating the joining agent to eutectically melt the aluminum nitride series ceramics and the flux, then precipitating a reprecipitated phase of the aluminum nitride series ceramics at the joining interface of the substrates.
    Type: Grant
    Filed: January 26, 1998
    Date of Patent: July 17, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Tsutomu Imai
  • Publication number: 20010006172
    Abstract: A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.
    Type: Application
    Filed: January 3, 2001
    Publication date: July 5, 2001
    Applicant: NGK Insulators, Ltd.
    Inventors: Yuji Katsuda, Kiyoshi Araki, Tsuneaki Ohashi
  • Patent number: 6239402
    Abstract: An aluminum nitride-based sintered body is disclosed, which includes aluminum nitride as a main ingredient and magnesium and has a polycrystalline structure composed of aluminum nitride crystals.
    Type: Grant
    Filed: July 21, 1999
    Date of Patent: May 29, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Kiyoshi Araki, Yuji Katsuda, Sadanori Shimura, Tsuneaki Ohashi
  • Patent number: 6204489
    Abstract: A heater including a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part. The substrate includes a first ceramic material and the resistance control part includes a second ceramic material which has higher volume resistivity than that of the first ceramic material.
    Type: Grant
    Filed: December 22, 1998
    Date of Patent: March 20, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Yuji Katsuda, Kiyoshi Araki, Tsuneaki Ohashi
  • Patent number: 6160244
    Abstract: A susceptor comprising a planar heat-conductive layer having a heating surface for heating an object to be heated and a rear surface, a supporting member for supporting the planar heat-conductive layer from a side of the rear surface thereof, first and second heat-choking portions provided between the rear surface of the planar heat-conductive layer and the supporting member in this order, said first heat-choking portion being adapted for restricting a heat flow from the rear surface of the planar heat-conductive layer toward the supporting member, and the second heat-choking portion provided between the first heat-choking portion and the supporting member and adapted for restricting a heat flow from the first heat-choking portion to the supporting member.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: December 12, 2000
    Assignee: NGK Insulators, Ltd.
    Inventor: Tsuneaki Ohashi
  • Patent number: 6156686
    Abstract: A porous composite ceramic sintered body includes an aluminum nitride phase and an aluminum oxynitride phase.
    Type: Grant
    Filed: December 7, 1998
    Date of Patent: December 5, 2000
    Assignee: NGK Insulators, Ltd.
    Inventors: Yuji Katsuda, Kiyoshi Araki, Tsuneaki Ohashi
  • Patent number: 6139983
    Abstract: This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.
    Type: Grant
    Filed: June 23, 1998
    Date of Patent: October 31, 2000
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Kiyoshi Araki, Sadanori Shimura, Yuji Katsuda
  • Patent number: 6051303
    Abstract: A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.Orientation degree=[I'(002)/I'(100)]/[I(002)/I(100)]in which in an X-ray diffraction measurement, I'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.
    Type: Grant
    Filed: July 28, 1998
    Date of Patent: April 18, 2000
    Assignee: NGK Insulators, Ltd.
    Inventors: Yuji Katsuda, Kiyoshi Araki, Tsuneaki Ohashi
  • Patent number: 6028022
    Abstract: A novel method for joining aluminum nitride-series substrates to each other is provided in the substantial absence of an intervening third layer at the joining interface between the substrates. In the method, the aluminum nitride-series substrates are joined to each other by interposing a joining agent between the substrates, heating the substrates and the joining agent to a first temperature range of at least the melting point of the joining agent to melt the joining agent and liquefy particles of the aluminum nitride at the neighborhood of the interfaces between the melted joining agent and the substrates, and then heating the joining agent and the substrates to a temperature range higher than the temperature range of the first process but lower than the melting point of the substrates to exhaust the joining agent from between the substrates.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: February 22, 2000
    Assignee: NGK Insulators, Ltd.
    Inventor: Tsuneaki Ohashi
  • Patent number: 5998321
    Abstract: This invention relates to an aluminum nitride sintered body comprising aluminum nitride crystal grains, in which the grains have a given content of a rare earth element (a conversion content as an oxide thereof), a given average grain size, and a given spin amount per unit mg of aluminum obtained from a spectrum as measured by an electron spin resonance method. The aluminum nitride sintered body is used in an electronic functional material and an electrostatic chuck.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: December 7, 1999
    Assignee: NGK Insulators, Ltd.
    Inventors: Yuji Katsuda, Kiyoshi Araki, Tsuneaki Ohashi
  • Patent number: 5993699
    Abstract: This invention provides an aluminum nitride based composite body comprising aluminum nitride crystal grains and .gamma.-alumina type crystals in which the aluminum nitride crystal grains has a specified oxygen content as measured by means of an X-ray microanalyzer and a specified spin amount per unit mg of aluminum obtained from a spectrum measured by an electron spin resonance method as well as a method of producing the same.
    Type: Grant
    Filed: May 27, 1998
    Date of Patent: November 30, 1999
    Assignee: NGK Insulators, Ltd.
    Inventors: Yuji Katsuda, Kiyoshi Araki, Tsuneaki Ohashi
  • Patent number: 5531837
    Abstract: A method for increasing the oxidation resistance of a Fe-Cr-Al alloy, which comprises placing said Fe-Cr-Al alloy in an atmosphere having an oxygen partial atmosphere of 0.02-2 Pa at a temperature of 950.degree.-1,200.degree. C. to form, on the surface of said alloy, an alumina-based protective film having excellent oxidation resistance.Said method enables the formation of a homogeneous protective film having excellent oxidation resistance, even on alloys having non-homogeneous compositions, such as Fe-Cr-Al alloy and the like, and is very effective for increasing the oxidation resistance of Fe-Cr-Al alloy.
    Type: Grant
    Filed: March 16, 1994
    Date of Patent: July 2, 1996
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Nobuo Tsuno, Teruhisa Kurokawa
  • Patent number: 5514347
    Abstract: A honeycomb structure having a periphery and two ends, including a plurality of passages which are defined by partition walls and extend in an axial direction between the ends, wherein the partition walls are formed of a plurality of through holes for forming turbulent flow so that the fluid pass through the through holes from one of the passages to the adjacent passage, each of the through holes having an open area of at least 0.25 mm.sup.2, thereby a stream of the fluid passing through the honeycomb structure is efficiently mixed to increase its contact with a catalyst composition coated on a surface of the partition walls. The honeycomb structure may have a corrugated thin metal foil. Alternatively, the honeycomb structure may have a unitary structure formed by sintering an extruded body comprising a powder material.
    Type: Grant
    Filed: February 24, 1994
    Date of Patent: May 7, 1996
    Assignee: NGK Insulators, Ltd.
    Inventors: Tsuneaki Ohashi, Nobuo Tsuno