Abstract: A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.

Abstract: An apparatus comprises a first photodiode, a second photodiode, a quantizer, a memory, and a controller configured to: set a first exposure period in which the first photodiode generates a first charge; set a second exposure period in which the second photodiode generates a second charge, the second exposure period being set based on the first exposure period and at least one of: a first time associated with a read out operation of the memory to a second apparatus, or a second time associated with a quantization operation by the quantizer; perform, using the quantizer, the first quantization operation of the first charge to generate a first digital output; and perform, using the quantizer, a second quantization operation of the second charge to generate a second digital output.

Abstract: An apparatus comprises a first photodiode, a second photodiode, a charge sensing unit, a quantizer, a memory, and a controller configured to: set a first exposure period in which the first photodiode generates a first charge; set a second exposure period in which the second photodiode generates a second charge, the second exposure period being set based on the first exposure period and at least one of: a first time associated with a read out operation of the memory to a second apparatus, or a second time associated with a quantization operation by the quantizer; perform, using the quantizer, the first quantization operation of the first charge to generate a first digital output; store the first digital output in the memory; perform, using the quantizer, a second quantization operation of the second charge to generate a second digital output; and store the second digital output in the memory.

Abstract: A new method for fabricating a semiconductor device with high selection phosphoric acid solution and eliminating the step of oxide removal and thus reducing oxide loss to improve yield gain and cost saving.

Abstract: In one example, an apparatus comprises: a photodiode to generate a charge in response to light within an exposure period having a first duration; a charge sensing unit to accumulate at least a part of the charge within the exposure period; a quantizer; and a controller to: determine, using the quantizer and within a measurement period having a second duration, whether a first quantity of the at least a part of the charge accumulated at the charge sensing unit exceeds a threshold, and a time it takes for the first quantity to exceed the threshold, wherein the first duration and the second duration are individually programmable; and based on whether the first quantity exceeds the threshold, output a first value representing the time or a second value representing a second quantity of the charge generated by the photodiode within the exposure period to represent an intensity of the light.

Abstract: The present invention provides a method for improving the quality of a high-voltage metal oxide semiconductor (HV MOS), the method includes: firstly, a substrate is provided, next, a hard mask layer is formed on the substrate, an oxygen plasma treatment is then performed to the hard mask layer, so as to form an oxide layer on the hard mask layer. Afterwards, a patterned photoresist layer is formed on the oxide layer, and a first cleaning process is performed to a top surface of the oxide layer after the patterned photoresist layer is formed, wherein the first cleaning process comprises rinsing the oxide layer with carbonated water. Next, a first etching process is performed to remove parts of the hard mask layer, and the patterned photoresist layer is then removed. Afterwards, a second etching process is performed, to remove the oxide layer.

Abstract: Methods and systems for quantizing a physical quantity, such as light, are provided. In one example, an apparatus comprises an analog-to-digital (A/D) converter configured to generate raw digital outputs based on performing at least one of: (1) a first quantization operation to quantize a physical stimulus within a first intensity range based on a first A/D conversion relationship, or (2) a second quantization operation to quantize the physical stimulus within a second intensity range based on a second A/D conversion relationship; and a raw output conversion circuit configured generate a refined digital output based on a raw digital output obtained from the A/D converter and at least one predetermined conversion parameter. The at least one conversion parameter compensates for a discontinuity between the first A/D conversion relationship and the second A/D conversion relationship.

Abstract: A method is provided for cleaning a semiconductor structure. The method includes performing a rinse process of CO2 with water (CO2W) process over the semiconductor structure; and performing a standard clean (SC) process over the semiconductor structure with an overlapping period with the step of performing the rinse process of CO2W.

Abstract: The invention provides a method of epitaxial structure formation in a semiconductor, comprising: providing a substrate; performing a dry etch to form a first recess; after performing the dry etch, performing a SPM cleaning process on the substrate by using a nozzle spraying SPM solution with an angle greater than zero and less than 45 degrees relative to the substrate; after performing the SPM cleaning process, performing a wet etch to form a second recess; after performing the wet etch, performing a pre-epi cleaning process; and growing an epitaxial structure in the second recess.

Abstract: The invention provides a method of epitaxial structure formation in a semiconductor, comprising: providing a substrate; performing a dry etch to form a first recess; after performing the dry etch, performing a SPM cleaning process on the substrate by using a nozzle spraying SPM solution with an angle greater than zero and less than 45 degrees relative to the substrate; after performing the SPM cleaning process, performing a wet etch to form a second recess; after performing the wet etch, performing a pre-epi cleaning process; and growing an epitaxial structure in the second recess.

Abstract: A substrate cleaning method is provided. A substrate is provided, followed by performing a first pre-cleaning process with a first rotation speed and a first duration time. After the first pre-cleaning process, a second pre-cleaning process is performed with a second rotation speed and a second duration time, wherein the second rotation speed is greater than the first rotation speed. After the second pre-cleaning process, a cleaning process is performed by using a chemical agent with a cleaning rotation speed.

Abstract: A method for cleaning a wafer is provided. The method comprises the following steps. First, a clean solution is provided with a first amount to a front side and a back side of the wafer. Next, the clean solution is provided with a second amount to the front side and the back side of the wafer, wherein the second amount is less than the first amount. And then, the clean solution and a nano-spray of the clean solution are provided with a third amount in total to the front side of the wafer, wherein the third amount is less than the second amount.

Abstract: A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.

Abstract: A playback device for a multimedia file is provided. The playback device is applied to a player that switches a channel according to a control signal. The playback device for a multimedia file includes: a processing unit, configured to access one of a plurality of sets of playlist link information from a look-up table according to the control signal, and to obtain a playlist according to the selected playlist link information; a multimedia content identification unit, configured to access the multimedia file according to contents of the playlist; and an image processing unit, configured to process the multimedia file and to transmit the processed multimedia file to a display module for display.

Abstract: A semiconductor process including the following steps is provided. A substrate is provided. A nitride layer is formed on the substrate, but exposing a silicon containing area. An oxidation process is performed to oxidize a surface of the silicon containing area to form an oxidized surface. The nitride layer is removed.

Abstract: A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (PO-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract: A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water.

Abstract: A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water.