Patents by Inventor Tsung-Yu Chen
Tsung-Yu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220359322Abstract: A semiconductor package includes a chip package disposed on a substrate, a plurality of electronic components disposed aside the chip package on the substrate and a stiffener structure disposed on the substrate. The stiffener structure includes a stiffener ring surrounding the chip package and the plurality of electronic components, a stiffener rib between the chip package and the plurality of electronic components, wherein the stiffener rib includes a first portion and a second portion on the first portion, and a width of the second portion is greater than a width of the first portion. The semiconductor package further includes a lid attached to the stiffener structure, the chip package and the plurality of electronic components. A method of forming the semiconductor package is also provided.Type: ApplicationFiled: May 6, 2021Publication date: November 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wensen Hung, Yu-Ling Tsai, Chien-Chia Chiu, Tsung-Yu Chen
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Publication number: 20220352060Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.Type: ApplicationFiled: April 29, 2021Publication date: November 3, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Yu Yeh, Tsung-Shu Lin, Wei-Cheng Wu, Tsung-Yu Chen, Li-Han Hsu, Chien-Fu Tseng
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Publication number: 20220189844Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.Type: ApplicationFiled: March 8, 2022Publication date: June 16, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wensen Hung, Ping-Kang Huang, Sao-Ling Chiu, Tsung-Yu Chen, Tsung-Shu Lin, Chien-Yuan Huang, Chen-Hsiang Lao
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Publication number: 20220149030Abstract: A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.Type: ApplicationFiled: January 25, 2022Publication date: May 12, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Shu Lin, Tsung-Yu Chen, Wensen Hung
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Patent number: 11302600Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.Type: GrantFiled: December 18, 2019Date of Patent: April 12, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wensen Hung, Ping-Kang Huang, Sao-Ling Chiu, Tsung-Shu Lin, Tsung-Yu Chen, Chien-Yuan Huang, Chen-Hsiang Lao
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Publication number: 20220102288Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.Type: ApplicationFiled: September 25, 2020Publication date: March 31, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wensen Hung, Hsuan-Ning Shih, Hsien-Pin Hu, Tsung-Shu Lin, Tsung-Yu Chen, Wen-Hsin Wei
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Patent number: 11282825Abstract: A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.Type: GrantFiled: May 19, 2020Date of Patent: March 22, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Shu Lin, Tsung-Yu Chen, Wensen Hung
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Publication number: 20210384154Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Kuan-Yu Huang, Li-Chung Kuo, Sung-Hui Huang, Shang-Yun Hou, Tsung-Yu Chen, Chien-Yuan Huang
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Publication number: 20210375769Abstract: A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.Type: ApplicationFiled: August 9, 2021Publication date: December 2, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Kai CHENG, Tsung-Shu LIN, Tsung-Yu CHEN, Hsien-Pin HU, Wen-Hsin WEI
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Publication number: 20210366889Abstract: A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.Type: ApplicationFiled: May 19, 2020Publication date: November 25, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Shu Lin, Tsung-Yu Chen, Wensen Hung
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Publication number: 20210366805Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.Type: ApplicationFiled: August 6, 2021Publication date: November 25, 2021Inventors: CHI-HSI WU, WENSEN HUNG, TSUNG-SHU LIN, SHIH-CHANG KU, TSUNG-YU CHEN, HUNG-CHI LI
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Publication number: 20210343619Abstract: A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.Type: ApplicationFiled: July 12, 2021Publication date: November 4, 2021Inventors: Wensen Hung, Tsung-Yu Chen, Tsung-Shu Lin, Chen-Hsiang Lao, Wen-Hsin Wei, Hsien-Pin Hu
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Publication number: 20210280491Abstract: In an embodiment, a device includes: a die stack over and electrically connected to an interposer, the die stack including a topmost integrated circuit die including: a substrate having a front side and a back side opposite the front side, the front side of the substrate including an active surface; a dummy through substrate via (TSV) extending from the back side of the substrate at least partially into the substrate, the dummy TSV electrically isolated from the active surface; a thermal interface material over the topmost integrated circuit die; and a dummy connector in the thermal interface material, the thermal interface material surrounding the dummy connector, the dummy connector electrically isolated from the active surface of the topmost integrated circuit die.Type: ApplicationFiled: May 24, 2021Publication date: September 9, 2021Inventors: Tsung-Shu Lin, Wensen Hung, Hung-Chi Li, Tsung-Yu Chen
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Patent number: 11101236Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.Type: GrantFiled: June 19, 2019Date of Patent: August 24, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuan-Yu Huang, Li-Chung Kuo, Sung-Hui Huang, Shang-Yun Hou, Tsung-Yu Chen, Chien-Yuan Huang
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Patent number: 11088048Abstract: The present disclosure provides a semiconductor structure. The semiconductor includes a substrate, a block bonded on the substrate, a first die bonded on the block, a second die disposed over the first die, and a heat spreader covering the block and having a surface facing toward and proximal to the block. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the block.Type: GrantFiled: December 23, 2019Date of Patent: August 10, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chi-Hsi Wu, Wensen Hung, Tsung-Shu Lin, Shih-Chang Ku, Tsung-Yu Chen, Hung-Chi Li
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Patent number: 11088079Abstract: A package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.Type: GrantFiled: June 27, 2019Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Kai Cheng, Tsung-Shu Lin, Tsung-Yu Chen, Hsien-Pin Hu, Wen-Hsin Wei
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Publication number: 20210233833Abstract: A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Inventors: Shih-Chang Ku, Hung-Chi Li, Tsung-Shu Lin, Tsung-Yu Chen, Wensen Hung
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Patent number: 11062971Abstract: A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.Type: GrantFiled: April 1, 2019Date of Patent: July 13, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wensen Hung, Tsung-Yu Chen, Tsung-Shu Lin, Chen-Hsiang Lao, Wen-Hsin Wei, Hsien-Pin Hu
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Publication number: 20210193550Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a lid and outer flanges. The lid overlies the semiconductor package. The outer flanges are disposed at edges of the lid, are connected with the lid, extend from the lid towards the circuit substrate, and face side surfaces of the semiconductor package. The lid has a first region that is located over the semiconductor package and is thicker than a second region that is located outside a footprint of the semiconductor package.Type: ApplicationFiled: December 18, 2019Publication date: June 24, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wensen Hung, Ping-Kang Huang, Sao-Ling Chiu, Tsung-Shu Lin, Tsung-Yu Chen, Chien-Yuan Huang, Chen-Hsiang Lao
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Patent number: 11018073Abstract: In an embodiment, a device includes: a die stack over and electrically connected to an interposer, the die stack including a topmost integrated circuit die including: a substrate having a front side and a back side opposite the front side, the front side of the substrate including an active surface; a dummy through substrate via (TSV) extending from the back side of the substrate at least partially into the substrate, the dummy TSV electrically isolated from the active surface; a thermal interface material over the topmost integrated circuit die; and a dummy connector in the thermal interface material, the thermal interface material surrounding the dummy connector, the dummy connector electrically isolated from the active surface of the topmost integrated circuit die.Type: GrantFiled: October 7, 2019Date of Patent: May 25, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Shu Lin, Wensen Hung, Hung-Chi Li, Tsung-Yu Chen