Abstract: A method for measuring lattice defects in semiconductor such as a silicon crystal, detects an ultrasonic velocity of an ultrasonic pulse propagating through the semiconductor to which heat is variably applied. An elastic constant of the semiconductor is calculated from the ultrasonic velocity, and a concentration or density of lattice defects of the semiconductor is obtained by converting the elastic constant.

Abstract: A rotatable member to be indexed in a machine is intermittently rotated through specific angular displacements between predesignated indexing positions by an indexing mechanism driven by a hydraulic motor and is positively locked in each indexing position by a positive clutch coupling comprising a movable plate fixed to the rotatable member and a mating stationary plate fixed to a stationary part of the machine, the clutch coupling being engaged and disengaged by a hydraulic cylinder. The hydraulic motor and hydraulic cylinder are controllably and coordinately operated by a common hydraulic system including pipe and tank lines and at least one electromagnetic changeover valve of the two-position, four-connection type.

Abstract: In an indexing system for a member such as a turret head of a lathe, in which the member after undergoing an indexing movement is locked by a locking bolt thrust by spring force into a bolt hole in a plate coaxially fixed to the member, a hydraulic cylinder is used to exert a great force for holding the locking bolt positively and unmovably in each bolt hole against any reactive counter force from the side of the member due to a great load. The hydraulic cylinder is controllably actuated by a single hydraulic system containing also a hydraulic motor for driving the member in its indexing movement and a solenoid valve.

Abstract: A method for cutting an electrical conductive layer having a heat-absorbing film deposited thereon, by irradiating an energy beam on a portion of the electrical conductive layer intended to be cut. The energy beam is irradiated on the film, whereby the portion of the electrical conductive layer melts and alloys with the heat-absorbing film due to the energy absorbed and transferred by the heat-absorbing film.

Abstract: A semiconductor device in which an insulating layer having a window is formed on a semiconductor substrate, a semiconductor layer is formed on the insulating layer and a semiconductor element is formed on the semiconductor layer, has the advantages of high-speed operation and low power consumption. A conventional manufacturing method involves a high-temperature, time-consuming step by which the semiconductor layer for forming thereon the semiconductor element is formed so that it may have a proper impurity concentration. In the present invention, however, a portion of the semiconductor layer and a portion of the underlying substrate are rendered molten by annealing with an energy beam as of a laser, by which an impurity contained in the substrate is diffused into the semiconductor layer. Accordingly, no high-temperature, time-consuming step is involved in the present invention, permitting the production of a semiconductor device of excellent characteristics.

Abstract: The invention is concerned with an improved method of producing a one-transistor cell for a dynamic RAM having a capacitor plate, a transfer gate and a shallow n.sup.+ -type region and a deeper p.sup.+ -type region for a junction capacitance. After formation of a thin oxide layer of a dielectric for an MOS capacitance, a patterned photo resist layer is formed. Using the photo resist layer as a mask, n-type impurities are doped into a semiconductor substrate. The capacitor plate and a masking layer are deposited on the photo resist layer and the thin oxide layer. P-type impurities are doped into the capacitor plate. Then, portions of the capacitor plate and masking layer on the photo resist layer are removed by removing the photo resist layer. An end portion of the capacitor plate is removed from under an edge of the remaining masking layer by etching. The p-type impurities are diffused into the silicon substrate by heating to form the deeper p.sup.+ -type region which does not extend beyond the n.sup.

Abstract: Carbon fibers having high tenacity and high modulus of elasticity can be obtained with a high carbonization yield and within a short period of time by heat-carbonizing acrylonitrile polymer fibers comprising a copolymer composed mainly of acrylonitrile and a compound expressed by the general formula of ##EQU1## wherein R is hydrogen or methyl group, A is an alkoxy group having 1 - 4 carbon atoms, B is a halogenated alkoxy group having 1 - 4 carbon atoms (wherein halogen is chlorine, bromine or iodine), n is 0 - 2, m is 0 - 2 and n + m is 2.