Patents by Inventor Tsuyoshi Fukada
Tsuyoshi Fukada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8028584Abstract: A pressure sensor includes: a housing having a pressure introduction port; and a connector case integrated with the housing. The connector case includes: a protruding portion that protrudes in the pressure introduction port along with the introduction direction from one end of the connector case, and has a concavity hollowed in a direction perpendicular to the introduction direction; a sensor chip having a pressure gauge on one surface of the chip in the concavity; a terminal having one end inserted and molded in the connector case; and a bonding wire that electrically connects the sensor chip and the one end of the terminal. The connector case seals a connection portion between the bonding wire and the terminal, a connection portion between the boding wire and the sensor chip, and the bonding wire.Type: GrantFiled: July 29, 2008Date of Patent: October 4, 2011Assignee: DENSO CORPORATIONInventors: Kiyoshi Otsuka, Yasuaki Makino, Tsuyoshi Fukada, Inao Toyoda, Naoki Kakoiyama
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Patent number: 8006553Abstract: A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.Type: GrantFiled: July 7, 2009Date of Patent: August 30, 2011Assignee: DENSO CORPORATIONInventors: Ryuichirou Abe, Tsuyoshi Fukada, Keisuke Suzui
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Publication number: 20100005877Abstract: A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the. semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.Type: ApplicationFiled: July 7, 2009Publication date: January 14, 2010Applicant: DENSO CORPORATIONInventors: Ryuichirou Abe, Tsuyoshi Fukada, Keisuke Suzui
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Publication number: 20090049921Abstract: A pressure sensor includes: a housing having a pressure introduction port; and a connector case integrated with the housing. The connector case includes: a protruding portion that protrudes in the pressure introduction port along with the introduction direction from one end of the connector case, and has a concavity hollowed in a direction perpendicular to the introduction direction; a sensor chip having a pressure gauge on one surface of the chip in the concavity; a terminal having one end inserted and molded in the connector case; and a bonding wire that electrically connects the sensor chip and the one end of the terminal. The connector case seals a connection portion between the bonding wire and the terminal, a connection portion between the boding wire and the sensor chip, and the bonding wire.Type: ApplicationFiled: July 29, 2008Publication date: February 26, 2009Applicant: DENSO CORPORATIONInventors: Kiyoshi Otsuka, Yasuaki Makino, Tsuyoshi Fukada, Inao Toyoda, Naoki Kakoiyama
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Patent number: 7298022Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.Type: GrantFiled: March 10, 2005Date of Patent: November 20, 2007Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Tsuyoshi Fukada, Kenichi Ao
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Patent number: 7214625Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.Type: GrantFiled: September 9, 2004Date of Patent: May 8, 2007Assignee: Denso CorporationInventors: Kazushi Asami, Junji Oohara, Hiroshi Muto, Kazuhiko Sugiura, Tsuyoshi Fukada, Yukihiro Takeuchi
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Publication number: 20050216361Abstract: A business transaction processing system includes a server into which a purchasing information of a stockist, at a time when goods are supplied to a stockist from a plurality of suppliers, is inputted, and a supplier side terminal unit connected to the server through cable communication or wireless communication. The server is provided with a conversion unit for extracting purchasing data relating to an optional supplier of the suppliers from the purchasing information of the stockist and converting the extracted purchasing data into supply information of the optional supplier, and the supply information in the server is indicated on the supplier side terminal unit.Type: ApplicationFiled: September 29, 2004Publication date: September 29, 2005Applicant: Fidec CorporationInventor: Tsuyoshi Fukada
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Publication number: 20050156309Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.Type: ApplicationFiled: March 10, 2005Publication date: July 21, 2005Inventors: Tetsuo Fujii, Tsuyoshi Fukada, Kenichi Ao
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Patent number: 6906394Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.Type: GrantFiled: May 30, 2003Date of Patent: June 14, 2005Assignee: Denso CorporationInventors: Hiroshi Muto, Tsuyoshi Fukada, Kenichi Ao, Minekazu Sakai, Yukihiro Takeuchi, Kazuhiko Kano, Junji Oohara
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Publication number: 20050054153Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.Type: ApplicationFiled: September 9, 2004Publication date: March 10, 2005Inventors: Kazushi Asami, Junji Oohara, Hiroshi Muto, Kazuhiko Sugiura, Tsuyoshi Fukada, Yukihiro Takeuchi
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Patent number: 6787866Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.Type: GrantFiled: March 7, 2002Date of Patent: September 7, 2004Assignee: Denso CorporationInventors: Tetsuo Fujii, Tsuyoshi Fukada, Kenichi Ao
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Patent number: 6753201Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.Type: GrantFiled: May 28, 2002Date of Patent: June 22, 2004Assignee: Denso CorporationInventors: Hiroshi Muto, Tsuyoshi Fukada, Kenichi Ao, Minekazu Sakai, Yukihiro Takeuchi, Kazuhiko Kano, Junji Oohara
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Patent number: 6718824Abstract: A semiconductor dynamic quantity sensor, for example, an acceleration sensor is formed on a SOI substrate having an activation layer and a supporting layer with an oxide film interposed therebetween. A structure for the sensor is formed in the activation layer. An opening is formed in the supporting layer and the oxide film to expose the structure. In this sensor, stress layer is formed in the activation layer at a side contacting the oxide film. The stress layer is removed at a region facing the opening to prevent the structure from cambering.Type: GrantFiled: December 13, 2001Date of Patent: April 13, 2004Assignees: Nippon Soken, Inc., Denso CorporationInventors: Takeshi Ito, Kazushi Asami, Tsuyoshi Fukada, Hirofumi Higuchi
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Publication number: 20030201506Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.Type: ApplicationFiled: May 30, 2003Publication date: October 30, 2003Inventors: Hiroshi Muto, Tsuyoshi Fukada, Kenichi Ao, Minekazu Sakai, Yukihiro Takeuchi, Kazuhiko Kano, Junji Oohara
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Publication number: 20020177252Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.Type: ApplicationFiled: May 28, 2002Publication date: November 28, 2002Inventors: Hiroshi Muto, Tsuyoshi Fukada, Kenichi Ao, Minekazu Sakai, Yukihiro Takeuchi, Kazuhiko Kano, Junji Oohara
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Patent number: 6444543Abstract: Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.Type: GrantFiled: May 30, 2001Date of Patent: September 3, 2002Assignee: Denso CorporationInventors: Minekazu Sakai, Hiroshige Sugito, Hiroshi Muto, Motoki Ito, Tsuyoshi Fukada
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Patent number: 6429506Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.Type: GrantFiled: March 15, 2000Date of Patent: August 6, 2002Assignee: Denso CorporationInventors: Tetsuo Fujii, Tsuyoshi Fukada, Hiroshi Muto, Kenichi Ao, Shinji Yoshihara, Sumitomo Inomata
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Patent number: 6423563Abstract: A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.Type: GrantFiled: May 22, 2001Date of Patent: July 23, 2002Assignee: Denso CorporationInventors: Tsuyoshi Fukada, Minekazu Sakai, Minoru Murata, Yukihiro Takeuchi, Seiki Aoyama
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Publication number: 20020093076Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.Type: ApplicationFiled: March 7, 2002Publication date: July 18, 2002Inventors: Tetsuo Fujii, Tsuyoshi Fukada, Hiroshi Muto, Kenichi Ao, Shinji Yoshihara, Sumitomo Inomata
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Publication number: 20020073779Abstract: A semiconductor dynamic quantity sensor, for example, an acceleration sensor is formed on a SOI substrate having an activation layer and a supporting layer with an oxide film interposed therebetween. A structure for the sensor is formed in the activation layer. An opening is formed in the supporting layer and the oxide film to expose the structure. In this sensor, stress layer is formed in the activation layer at a side contacting the oxide film. The stress layer is removed at a region facing the opening to prevent the structure from cambering.Type: ApplicationFiled: December 13, 2001Publication date: June 20, 2002Inventors: Takeshi Ito, Kazushi Asami, Tsuyoshi Fukada, Hirofumi Higuchi