Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack, a second gate stack, and a third gate stack, which are positioned over a semiconductor substrate and spaced apart from each other. The method includes removing portions of the semiconductor substrate to form a first recess, a second recess, and a third recess in the semiconductor substrate. The method includes forming a first doped structure, a second doped structure, and an isolation structure in the first recess, the second recess, and the third recess respectively. The first gate stack, the second gate stack, the first doped structure, and the second doped structure together form a memory cell. The isolation structure is wider and thinner than the second doped structure. A top surface of the isolation structure has a fourth recess.

Abstract: An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack, a second gate stack, and a third gate stack, which are positioned over a semiconductor substrate and spaced apart from each other. The method includes removing portions of the semiconductor substrate to form a first recess, a second recess, and a third recess in the semiconductor substrate. The method includes forming a first doped structure, a second doped structure, and an isolation structure in the first recess, the second recess, and the third recess respectively. The first gate stack, the second gate stack, the first doped structure, and the second doped structure together form a memory cell. The isolation structure is wider and thinner than the second doped structure. A top surface of the isolation structure has a fourth recess.

Abstract: A method comprises forming a plurality of interconnect components over a gate structure, wherein a bottom metal line of the interconnect components is connected to the gate structure through a gate plug, depositing a dielectric layer over a top metal line of the interconnect components, forming an opening in the dielectric layer, depositing a first barrier layer on a bottom and sidewalls of the opening using a non-plasma based deposition process, depositing a second barrier layer over the first barrier layer using a plasma based deposition process and forming a pad in the opening.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack positioned over the semiconductor substrate. The semiconductor device structure includes a first doped structure and a second doped structure positioned at two opposite sides of the first gate stack and embedded in the semiconductor substrate. The semiconductor device structure includes a second gate stack positioned over the semiconductor substrate and adjacent to the second doped structure. The semiconductor device structure includes a third gate stack positioned over the semiconductor substrate. The semiconductor device structure includes an isolation structure embedded in the semiconductor substrate and between the second gate stack and the third gate stack. The isolation structure is wider and thinner than the second doped structure, and the isolation structure is made of an epitaxial material.

Abstract: In some embodiments, a method of manufacturing a device includes providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate. The method also includes forming a first opening within a conductive layer of the metal gate, and a second opening within the dielectric layer. The first opening and the second opening are connected, and are of a first shape. The method further includes expanding the first opening to form a third opening of a second shape within the conductive layer of the metal gate and beneath the dielectric layer, forming a first contact part by filling the third opening, and forming a second contact part by filling the second opening, the first contact part being connected to the second contact part.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.

Abstract: In some embodiments, a method of manufacturing a device includes providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate. The method also includes forming a first opening within a conductive layer of the metal gate, and a second opening within the dielectric layer. The first opening and the second opening are connected, and are of a first shape. The method further includes expanding the first opening to form a third opening of a second shape within the conductive layer of the metal gate and beneath the dielectric layer, forming a first contact part by filling the third opening, and forming a second contact part by filling the second opening, the first contact part being connected to the second contact part.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack positioned over the semiconductor substrate. The semiconductor device structure includes a first doped structure and a second doped structure positioned at two opposite sides of the first gate stack and embedded in the semiconductor substrate. The semiconductor device structure includes a second gate stack positioned over the semiconductor substrate and adjacent to the second doped structure. The semiconductor device structure includes a third gate stack positioned over the semiconductor substrate. The semiconductor device structure includes an isolation structure embedded in the semiconductor substrate and between the second gate stack and the third gate stack. The isolation structure is wider and thinner than the second doped structure, and the isolation structure is made of an epitaxial material.

Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.

Abstract: A method comprises forming a plurality of interconnect components over a gate structure, wherein a bottom metal line of the interconnect components is connected to the gate structure through a gate plug, depositing a dielectric layer over a top metal line of the interconnect components, forming an opening in the dielectric layer, depositing a first barrier layer on a bottom and sidewalls of the opening using a non-plasma based deposition process, depositing a second barrier layer over the first barrier layer using a plasma based deposition process and forming a pad in the opening.

Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.

Abstract: Methods and devices for forming a contact over a metal gate for a transistor are provided. The device may comprise an active area, an isolation area surrounding the active area, and a metal gate above the isolation area, wherein the metal gate comprises a conductive layer. The contact comprises a first contact part within the conductive layer, above the isolation area without vertically overlapping the active area, and a second contact part above the first contact part, connected to the first contact part, and substantially vertically contained within the first contact part.

Abstract: A method for forming interconnect structures comprises forming a metal line made of a first conductive material over a substrate, depositing a dielectric layer over the metal line, patterning the dielectric layer to form an opening, depositing a first barrier layer on a bottom and sidewalls of the opening using an atomic layer deposition technique, depositing a second barrier layer over the first barrier layer, wherein the first barrier layer is coupled to ground and forming a pad made of a second conductive material in the opening.

Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.

Abstract: A system and method of designing a layout for a plurality of different logic operation (LOP) cell technologies includes defining a priority for each LOP cell technology in the plurality of different LOP technologies and forming a layout of the plurality of different LOP cells for formation on a substrate with at least some of the LOP cells of higher priority LOP technologies overlapping LOP cells of lower priority LOP technologies. The system can include a processor coupled to memory where stored code defines the priority for each different cell technology in the plurality of LOP cells and (when the code is executed) the processor forms the layout of a plurality of different LOP cells. All of the LOP cells of higher priority LOP technologies overlap LOP cells of lower priority. The system or method also avoids the overlap of higher priority LOP cells by lower priority LOP cells.

Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.

Abstract: A system and method of designing a layout for a plurality of different logic operation (LOP) cell technologies includes defining a priority for each LOP cell technology in the plurality of different LOP technologies and forming a layout of the plurality of different LOP cells for formation on a substrate with at least some of the LOP cells of higher priority LOP technologies overlapping LOP cells of lower priority LOP technologies. The system can include a processor coupled to memory where stored code defines the priority for each different cell technology in the plurality of LOP cells and (when the code is executed) the processor forms the layout of a plurality of different LOP cells. All of the LOP cells of higher priority LOP technologies overlap LOP cells of lower priority. The system or method also avoids the overlap of higher priority LOP cells by lower priority LOP cells.

Abstract: A semiconductor device includes a gate structure over a substrate. The device further includes an isolation feature in the substrate and adjacent to an edge of the gate structure. The device also includes a spacer overlying a sidewall of the gate structure. The spacer has a bottom lower than a top surface of the substrate.

Abstract: A method for forming interconnect structures comprises forming a metal line made of a first conductive material over a substrate, depositing a dielectric layer over the metal line, patterning the dielectric layer to form an opening, depositing a first barrier layer on a bottom and sidewalls of the opening using an atomic layer deposition technique, depositing a second barrier layer over the first barrier layer, wherein the first barrier layer is coupled to ground and forming a pad made of a second conductive material in the opening.