Abstract: A power semiconductor module, as well as a corresponding method of manufacture, are provided. The power semiconductor module has a plurality of power switches. A first subset of the power switches forms part of a first electrical current branch. A second subset of the power switches forms part of a second electrical current branch. Within the current branches, the associated power switches are arranged symmetrically with respect to the DC voltage contacts and are connected in such a way that a current density which is formed in the individual current paths which are respectively assigned to one of the power switches is at least substantially homogeneously distributed during the high frequency operation of the power semiconductor module and/or in the operation of the power switches with high voltage gradients.

Abstract: The invention relates to the electrically conductive bond between at least two electrical components and/or devices at a carrier mounted with electronic and/or electrical devices, said bond being formed by a bond wire. The bond wire is bonded in a force fitting, shape matching manner and/or with material continuity to the electrical components and/or devices and is shaped in an arcuate manner between the electrical components and/or devices at a spacing from the surface of the carrier and from electronic and/or electrical devices arranged there. The respective bond wire is bent a multiple of times with changing directions between the electrical components and/or devices such that tips or regions of individual arcs are arranged at different spacings from the surface of the carrier.