Patents by Inventor Valluri Rao

Valluri Rao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8644050
    Abstract: For a probe based data storage (PDS) device a ferroelectric film stack may be used as a media to store data bits by polarizing areas of the film as either an up domain or a down domain to represent bits. However a built-in-bias field (BBF) may create domain retention problems. By growing the ferroelectric films with stress and composition gradients this may generate polarization gradients which reduce the bias field. Thus, the retention (or imprint) may be improved with minimized BBF.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: February 4, 2014
    Assignee: Intel Corporation
    Inventors: Li-Peng Wang, Qing Ma, Valluri Rao
  • Publication number: 20130335059
    Abstract: A voltage regulator for one or more dies in a multi-stack integrated circuit includes an inductor located on a die, a voltage controller that is electrically coupled to the inductor and is also located on the die, and a capacitor that is electrically coupled to the inductor and the voltage controller and is also located on the die. The inductor defines an interior space and the voltage controller and the capacitor are located within the interior space of the inductor. The inductor can be a lateral inductor or a through layer via inductor. The multi-stack integrated circuit may have multiple dies. A voltage controller may be electrically coupled to each of the dies, although it may be located on only one of the dies. Alternatively, separate voltage controllers may be electrically coupled to each of the multiple dies and may be located on each of the respective dies.
    Type: Application
    Filed: December 31, 2011
    Publication date: December 19, 2013
    Applicant: Intel Corporation
    Inventors: Ruchir Saraswat, Andre Schaefer, Uwe Zillman, Andreas Duevel, Valluri Rao, Telesphor Kamgaing, Harish Krishnamurthy
  • Publication number: 20130271208
    Abstract: System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) that is capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits. In embodiments, the III-N transistor architecture is amenable to scaling to sustain a trajectory of performance improvements over many successive device generations. In embodiments, the III-N transistor architecture is amenable to monolithic integration with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. Planar and non-planar HEMT embodiments having one or more of recessed gates, symmetrical source and drain, regrown source/drains are formed with a replacement gate technique permitting enhancement mode operation and good gate passivation.
    Type: Application
    Filed: December 19, 2011
    Publication date: October 17, 2013
    Applicant: Intel Corporation
    Inventors: Han Wui Then, Robert Chau, Valluri Rao, Niloy Mukherjee, Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Jack Kavalieros
  • Publication number: 20130003521
    Abstract: An arrangement, a method and a system to read information stored in a layer of ferroelectric media.
    Type: Application
    Filed: September 10, 2012
    Publication date: January 3, 2013
    Applicant: INTEL CORPORATION
    Inventors: Quan Anh Tran, Byong M. Kim, Robert N. Stark, Nathan R. Franklin, Qing Ma, Valluri Rao, Donald E. Adams, Li-Peng Wang, Yevgeny V. Anoikin
  • Patent number: 8264941
    Abstract: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media.
    Type: Grant
    Filed: December 26, 2007
    Date of Patent: September 11, 2012
    Assignee: Intel Corporation
    Inventors: Quan Anh Tran, Byong M. Kim, Robert N. Stark, Nathan R. Franklin, Qing Ma, Valluri Rao, Donald E. Adams, Li-Peng Wang, Yevgeny V. Anoikin
  • Publication number: 20120196384
    Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.
    Type: Application
    Filed: April 11, 2012
    Publication date: August 2, 2012
    Inventors: Yuegang Zhang, Andrew A. Berlin, Qing Ma, Li-Peng Wang, Valluri Rao, Mineo Yamakawa
  • Patent number: 8173436
    Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: May 8, 2012
    Assignee: Intel Corporation
    Inventors: Yuegang Zhang, Andrew Berlin, Qing Ma, Li-Peng Wang, Valluri Rao, Mineo Yamakawa
  • Patent number: 7952982
    Abstract: A data storage medium includes a piezoelectric film (101) having a surface (111) including a halogen. In one embodiment, the halogen exists in an atomic concentration of at least approximately 10 percent. The result is a hydrophobic surface conducive to long-lasting scanning probe tips, low contamination, and stable surface charge. A data storage device incorporating the data storage medium includes an enclosure (205) containing the data storage medium and an adjacent scanning probe (230) wherein the enclosure has a relative humidity of at least approximately 40 percent and at least a portion of the scanning probe is coated with a layer of water.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: May 31, 2011
    Assignee: Intel Corporation
    Inventors: Robert Chen, Qing Ma, Valluri Rao
  • Publication number: 20110086438
    Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.
    Type: Application
    Filed: December 14, 2010
    Publication date: April 14, 2011
    Inventors: Yuegang ZHANG, Andrew BERLIN, Qing MA, Li-Peng WANG, Valluri RAO, Mineo YAMAKAWA
  • Patent number: 7914740
    Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: March 29, 2011
    Assignee: Intel Corporation
    Inventors: Yuegang Zhang, Andrew A. Berlin, Qing Ma, Li-Peng Wang, Valluri Rao, Mineo Yamakawa
  • Patent number: 7871569
    Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: January 18, 2011
    Assignee: Intel Corporation
    Inventors: Yuegang Zhang, Andrew A. Berlin, Qing Ma, Li-Peng Wang, Valluri Rao, Mineo Yamakawa
  • Patent number: 7867786
    Abstract: The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: January 11, 2011
    Assignee: Intel Corporation
    Inventors: Qing Ma, Li-Peng Wang, Valluri Rao
  • Publication number: 20100267013
    Abstract: The methods and apparatus disclosed herein concern nucleic acid sequencing by enhanced Raman spectroscopy. In certain embodiments of the invention, nucleotides are covalently attached to Raman labels before incorporation into a nucleic acid. In other embodiments, unlabeled nucleic acids are used. Exonuclease treatment of the nucleic acid results in the release of labeled or unlabeled nucleotides that are detected by Raman spectroscopy. In alternative embodiments of the invention, nucleotides released from a nucleic acid by exonuclease treatment are covalently cross-linked to nanoparticles and detected by surface enhanced Raman spectroscopy (SERS), surface enhanced resonance Raman spectroscopy (SERRS) and/or coherent anti-Stokes Raman spectroscopy (CARS). Other embodiments of the invention concern apparatus for nucleic acid sequencing.
    Type: Application
    Filed: May 24, 2007
    Publication date: October 21, 2010
    Applicant: INTEL CORPORATION
    Inventors: Xing Su, Andrew Arthur Berlin, Selena Chan, Steven J. Kirch, Tae-Woong Koo, Gabi Neubauer, Valluri Rao, Narayan Sundararajan, Mineo Yamakawa
  • Publication number: 20100260033
    Abstract: For a probe based data storage (PDS) device a ferroelectric film stack may be used as a media to store data bits by polarizing areas of the film as either an up domain or a down domain to represent bits. However a built-in-bias field (BBF) may create domain retention problems. By growing the ferroelectric films with stress and composition gradients this may generate polarization gradients which reduce the bias field. Thus, the retention (or imprint) may be improved with minimized BBF.
    Type: Application
    Filed: April 8, 2009
    Publication date: October 14, 2010
    Inventors: Li Peng Wang, Qing Ma, Valluri Rao
  • Patent number: 7787352
    Abstract: A Seek and Scan Probe (SSP) memory device is disclosed. The memory device includes a moving part having microelectromechanical (MEMS) structures fabricated on a first wafer and CMOS and memory medium components fabricating on a second wafer bonded to the first wafer.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: August 31, 2010
    Assignee: Intel Corporation
    Inventors: Eyal Bar-Sadeh, Tsung-Kuan Chou, Valluri Rao, Krishnamurthy Murali
  • Publication number: 20090323506
    Abstract: A data storage medium includes a piezoelectric film (101) having a surface (111) including a halogen. In one embodiment, the halogen exists in an atomic concentration of at least approximately 10 percent. The result is a hydrophobic surface conducive to long-lasting scanning probe tips, low contamination, and stable surface charge. A data storage device incorporating the data storage medium includes an enclosure (205) containing the data storage medium and an adjacent scanning probe (230) wherein the enclosure has a relative humidity of at least approximately 40 percent and at least a portion of the scanning probe is coated with a layer of water.
    Type: Application
    Filed: June 30, 2008
    Publication date: December 31, 2009
    Inventors: Robert Chen, Qing Ma, Valluri Rao
  • Patent number: 7559242
    Abstract: An apparatus comprising a substrate and an array of vibration sensors formed on the substrate, the array comprising two or more vibration sensors, wherein each vibration sensor in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. A process comprising forming an array of vibration sensors on a substrate, the array comprising two or more vibration sensors, wherein each of the two or more vibration sensors in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: July 14, 2009
    Assignee: Intel Corporation
    Inventors: Li-Peng Wang, Qing Ma, Valluri Rao, Goutam Paul
  • Publication number: 20090168637
    Abstract: An arrangement, a method and a system to read information stored in a layer of ferroelectric media.
    Type: Application
    Filed: December 26, 2007
    Publication date: July 2, 2009
    Inventors: Quan Anh Tran, Byong M. Kim, Robert N. Stark, Nathan R. Franklin, Qing Ma, Valluri Rao, Donald E. Adams, Li-Peng Wang, Yevgeny V. Anoikin
  • Publication number: 20090168635
    Abstract: A memory media and a method to provide same. The memory media includes: a media layer comprising a ferroelectric layer having a bottom surface and a top surface; a plurality of adjacent charge domains defined in the ferroelectric layer, the domains including alternating up domains and down domains each extending between the bottom surface and the top surface; and a trapped charge region adjacent a top surface of the media layer, the trapped charge region including charges in addition to the charges present in the charge domains at regions thereof other than regions adjacent the top surface of the media layer.
    Type: Application
    Filed: December 26, 2007
    Publication date: July 2, 2009
    Inventors: QUAN ANH TRAN, Nathan R. Franklin, Qing Ma, Valluri Rao
  • Publication number: 20090155931
    Abstract: The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer.
    Type: Application
    Filed: December 18, 2007
    Publication date: June 18, 2009
    Inventors: Qing Ma, Li-Peng Wang, Valluri Rao