Abstract: A method is disclosed. The method includes fabricating microelectromechanical (MEMS) structures of a Seek and Scan Probe (SSP) memory device on a first wafer, and fabricating CMOS and memory medium components of the SSP memory device on a second wafer.

Abstract: A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

Abstract: In an embodiment, a transformer includes a first inductor electromagnetically coupled with a second inductor. The first and second inductors each have a spiral geometry in first and second areas, respectively, that are separated from each other on a surface of a substrate. In a method of operation, a second signal is generated in a second inductor through electromagnetic coupling with a first signal received by a first inductor.

Abstract: An apparatus comprising a substrate and an array of vibration sensors formed on the substrate, the array comprising two or more vibration sensors, wherein each vibration sensor in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. A process comprising forming an array of vibration sensors on a substrate, the array comprising two or more vibration sensors, wherein each of the two or more vibration sensors in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. Other embodiments are disclosed and claimed.

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.

Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

Abstract: The methods and apparatus disclosed herein concern nucleic acid sequencing by enhanced Raman spectroscopy. In certain embodiments of the invention, nucleotides are covalently attached to Raman labels before incorporation into a nucleic acid. In other embodiments, unlabeled nucleic acids are used. Exonuclease treatment of the nucleic acid results in the release of labeled or unlabeled nucleotides that are detected by Raman spectroscopy. In alternative embodiments of the invention, nucleotides released from a nucleic acid by exonuclease treatment are covalently cross-linked to nanoparticles and detected by surface enhanced Raman spectroscopy (SERS), surface enhanced resonance Raman spectroscopy (SERRS) and/or coherent anti-Stokes Raman spectroscopy (CARS). Other embodiments of the invention concern apparatus for nucleic acid sequencing.

Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.

Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.

Abstract: Briefly, in accordance with one embodiment of the invention, a memory device may include a memory layer and a MEMS layer. The memory layer may include an integrated circuit with a multiplexer and optionally a memory controller and a storage medium disposed on the integrated circuit where the storage medium includes chalcogenide islands as storage elements. The MEMS layer may include a movable MEMS platform having probes to connect selected chalcogenide islands via positioning of the MEMS platform. A high voltage source disposed external to the memory layer and the MEMS layer may provide a high voltage to a stator electrode on the memory layer and to a rotor electrode on the MEMS platform to control movement of the MEMS platform with respect to the storage medium. The memory device may be utilized in portable electronic devices such as media players and cellular telephones to provide a nonvolatile storage of information.

Abstract: The disclosed methods, apparatus and compositions are of use for nucleic acid sequencing. More particularly, the methods and apparatus concern sequencing single molecules of single stranded DNA or RNA by exposing the molecule to exonuclease activity, removing free nucleotides one at a time from one end of the nucleic acid, and identifying the released nucleotides by Raman spectroscopy or FRET.

Abstract: A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.

Abstract: A highly integrated radio front-end module. In one embodiment a semiconductor substrate is processed with various circuit components in the substrate, as well as interconnections for the various circuit components, embedding the circuit components into the substrate. One or more circuit components may be further connected with a separate integrated circuit, the separate integrated circuit bonded to the semiconductor substrate via contact points processed into the substrate.

Abstract: A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

Abstract: The disclosed methods, apparatus and compositions are of use for nucleic acid sequencing. More particularly, the methods and apparatus concern sequencing single molecules of single stranded DNA or RNA by exposing the molecule to exonuclease activity, removing free nucleotides one at a time from one end of the nucleic acid, and identifying the released nucleotides by Raman spectroscopy or FRET.

Abstract: A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.

Abstract: This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a distal end, the proximal end being attached to the anchor, an actuation portion attached to the distal end of the tapered portion, a tip attached to the actuation portion, the tip having a contact dimple thereon. The switch apparatus also includes an actuation electrode attached to the substrate and positioned between the actuation portion and the substrate. Additional embodiments are also described and claimed.

Abstract: Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured, are designed to have different frequencies.

Abstract: A semiconductor substrate integrated with interconnections and circuit components. A silicon backplane is processed with silicon processing to provide electrical connectivity for circuit elements. In one embodiment functional circuit elements, e.g., MEMS, switches, filters, are integrated on the silicon backplane. In one embodiment the function circuit elements are monolithically processed into the silicon backplane. In one embodiment the silicon backplane includes interconnections for integrated circuits on different substrates to be bonded to the silicon backplane.

Abstract: A method of forming a tuned resonator structure by first forming a base resonator structure that comprises a trimming layer on a resonator structure, wherein the trimming layer comprises at least one first low loss acoustic layer on the resonator structure, and at least one second low loss acoustic layer on the first low loss acoustic layer. Then, a “tuned” resonator structure is formed by measuring the frequency of the base resonator structure and removing the number of each of the two different low loss acoustic layers determined to be necessary to achieve the targeted frequency of the base resonator structure, thus improving the frequency control, reliability and performance of the resonating structure.