Patents by Inventor Vandana Krishnamurthy
Vandana Krishnamurthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11817317Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.Type: GrantFiled: October 26, 2020Date of Patent: November 14, 2023Assignee: Brewer Science, Inc.Inventors: Ming Luo, Yubao Wang, Kaumba Sakavuyi, Vandana Krishnamurthy
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Publication number: 20210125829Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.Type: ApplicationFiled: October 26, 2020Publication date: April 29, 2021Inventors: Ming Luo, Yubao Wang, Kaumba Sakavuyi, Vandana Krishnamurthy
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Publication number: 20190385837Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.Type: ApplicationFiled: June 12, 2019Publication date: December 19, 2019Inventors: Andrea M. Chacko, Vandana Krishnamurthy, Yichen Liang, Hao Lee, Stephen Grannemann, Douglas J. Guerrero
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Patent number: 9960038Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.Type: GrantFiled: December 22, 2011Date of Patent: May 1, 2018Assignee: Brewer Science, Inc.Inventors: Carlton Ashley Washburn, James E. Lamb, III, Nickolas L. Brakensiek, Qin Lin, Yubao Wang, Vandana Krishnamurthy, Claudia Scott
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Patent number: 9249013Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.Type: GrantFiled: April 15, 2013Date of Patent: February 2, 2016Assignee: Brewer Science Inc.Inventors: Yubao Wang, Mary Ann Hockey, Douglas J. Guerrero, Vandana Krishnamurthy, Robert C. Cox
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Patent number: 9102129Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.Type: GrantFiled: August 15, 2014Date of Patent: August 11, 2015Assignee: Brewer Science Inc.Inventors: Vandana Krishnamurthy, Daniel M. Sullivan, Yubao Wang, Qin Lin, Sean Simmons
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Patent number: 8968989Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.Type: GrantFiled: November 20, 2012Date of Patent: March 3, 2015Assignee: Brewer Science Inc.Inventors: Tantiboro Ouattara, Carlton Washburn, Vandana Krishnamurthy, Douglas Guerrero, Aline Collin
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Publication number: 20140356593Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.Type: ApplicationFiled: August 15, 2014Publication date: December 4, 2014Inventors: Vandana Krishnamurthy, Daniel M. Sullivan, Yubao Wang, Qin Lin, Sean Simmons
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Patent number: 8895230Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.Type: GrantFiled: October 10, 2012Date of Patent: November 25, 2014Assignee: Brewer Science Inc.Inventors: Vandana Krishnamurthy, Daniel M. Sullivan, Yubao Wang, Qin Lin, Sean Simmons
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Publication number: 20130273330Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.Type: ApplicationFiled: April 15, 2013Publication date: October 17, 2013Applicant: Brewer Science Inc.Inventors: Yubao Wang, Mary Ann Hockey, Douglas J. Guerrero, Vandana Krishnamurthy, Robert C. Cox
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Patent number: 8257910Abstract: The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved while improving adhesion and reducing or eliminating pattern collapse issues.Type: GrantFiled: June 24, 2009Date of Patent: September 4, 2012Assignee: Brewer Science Inc.Inventors: Douglas J. Guerrero, Hao Xu, Vandana Krishnamurthy
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Publication number: 20120164390Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.Type: ApplicationFiled: December 22, 2011Publication date: June 28, 2012Applicant: BREWER SCIENCE INC.Inventors: Carlton Ashley Washburn, James E. Lamb, III, Nickolas L. Brakensiek, Qin Lin, Yubao Wang, Vandana Krishnamurthy, Claudia Scott
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Patent number: 6962769Abstract: Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, ?-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).Type: GrantFiled: September 11, 2003Date of Patent: November 8, 2005Assignee: Brewer Science Inc.Inventors: Xie Shao, Jim D. Meador, Mandar Bhave, Vandana Krishnamurthy, Kelly A. Nowak, Michelle Fowler, Shreeram V. Deshpande
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Patent number: 6872506Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers include a light-attenuating moiety having a structure selected from the group consisting of: where: each of X1 and Y is individually selected from the group consisting of electron withdrawing groups; R2 is selected from the group consisting of alkyls and aryls; and R3 is selected from the group consisting of hydrogen and alkyls. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.Type: GrantFiled: June 23, 2003Date of Patent: March 29, 2005Assignee: Brewer Science Inc.Inventors: Charles J. Neef, Vandana Krishnamurthy
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Patent number: 6740469Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers of the composition include recurring units having the formula where X is a light-attenuating moiety, M is a metal, and each R is individually selected from the group consisting of hydrogen, alkyls, aryls, alkoxys, and phenoxys. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.Type: GrantFiled: June 25, 2002Date of Patent: May 25, 2004Assignee: Brewer Science Inc.Inventors: Vandana Krishnamurthy, Charles J. Neef, Juliet A. M. Snook
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Publication number: 20040058275Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system.Type: ApplicationFiled: June 23, 2003Publication date: March 25, 2004Applicant: Brewer Science, Inc.Inventors: Charles J. Neef, Vandana Krishnamurthy
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Publication number: 20040048196Abstract: Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, &agr;-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).Type: ApplicationFiled: September 11, 2003Publication date: March 11, 2004Inventors: Xie Shao, Jim D. Meador, Mandar Bhave, Vandana Krishnamurthy, Kelly A. Nowak, Michelle Fowler, Shreeram V. Deshpande
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Publication number: 20030235786Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system.Type: ApplicationFiled: June 25, 2002Publication date: December 25, 2003Applicant: BREWER SCIENCE, INC.Inventors: Vandana Krishnamurthy, Charles J. Neef, Juliet A.M. Snook
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Patent number: 5919599Abstract: Anti-reflective coating compositions having improved etch rate, inter alia, are prepared from certain high molecular weight polymers and copolymers, particularly glycidyl methacrylate with grafted dyes.Type: GrantFiled: September 30, 1997Date of Patent: July 6, 1999Assignee: Brewer Science, Inc.Inventors: Jim Meador, Douglas J. Guerrero, Xie Shao, Vandana Krishnamurthy
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Patent number: RE46841Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.Type: GrantFiled: November 23, 2016Date of Patent: May 15, 2018Assignee: Brewer Science, Inc.Inventors: Vandana Krishnamurthy, Daniel M. Sullivan, Yubao Wang, Qin Lin, Sean Simmons