Abstract: An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 ?m.

Abstract: A superconductor tape and method for fabricating same are disclosed. Embodiments are directed to a superconductor tape including a substrate and a buffer stack. In one embodiment, the buffer stack includes: an Ion Beam-Assisted Deposition (IBAD) template layer above the substrate; a homo-epitaxial film of MgO or TiN above the IBAD template layer; an epitaxial film of silver above the homo-epitaxial film; and a homo-epitaxial film of LaMnO3 (LMO) above the silver epitaxial film. The superconductor tape also includes a superconductor film above the buffer stack. These and other embodiments achieve a LMO film with substantially improved texture, resulting in a superconductor structure having high critical current and significantly reduced power consumption and cost.

Abstract: A round superconductor wire and method for fabricating same are disclosed. Embodiments are directed to a round superconductor wire including at least two superconductor tapes wound on a wire former. Each superconductor tape includes: bottom stabilizer and silver layers; substrate disposed above the bottom silver layer; buffer film stack disposed above the substrate; superconductor film disposed above the buffer film stack; top silver layer disposed above the superconductor film; and top stabilizer layer disposed above the top silver layer. At least one of the bottom stabilizer layer, bottom silver layer, substrate, buffer film stack, superconductor film, top silver layer, or top stabilizer layer is of a different width, thickness, or material composition in one of the superconductor tapes than in another of the superconductor tapes. These and other embodiments achieve a round superconductor wire having improved current density in high magnetic field applications when made in small diameters.

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a polycrystalline or amorphous substrate. An electrically conductive Ion Beam-Assisted Deposition (IBAD) template layer is positioned above the substrate. At least one electrically conductive hetero-epitaxial buffer layer is positioned above the IBAD template layer. The at least one buffer layer has a resistivity of less than 100 ??cm. The semiconductor device and method foster the use of bottom electrodes thereby avoiding complex and expensive lithography processes.

Abstract: A REBCO superconductor tape that can achieve a lift factor greater than or equal to approximately 3.0 or 4.0 in an approximately 3 T magnetic field applied perpendicular to a REBCO tape at approximately 30 K. In an embodiment, the REBCO superconductor tape can include a critical current density less than or equal to approximately 4.2 MA/cm2 at 77 K in the absence of an external magnetic field. In another embodiment, the REBCO superconductor tape can include a critical current density greater than or equal to approximately 12 MA/cm2 at approximately 30 K in a magnetic field of approximately 3 T having an orientation parallel to a c-axis.

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.

Abstract: A superconductor tape may be fabricated via Metal Organic Chemical Vapor Deposition (MOCVD) to achieve peel strengths greater than approximately 4.5 N/cm. The superconductor tape may be fabricated via MOCVD with a REBCO composition that includes the elements Samarium (Sm)-Barium(Ba)-Copper(Cu)-Oxygen(O). Varying levels of Copper (Cu) content can achieve peel strengths ranging between approximately 4.5 N/cm to approximately 8.0 N/cm.

Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Abstract: A REBCO superconductor tape that can achieve a lift factor greater than or equal to approximately 3.0 or 4.0 in an approximately 3 T magnetic field applied perpendicular to a REBCO tape at approximately 30 K. In an embodiment, the REBCO superconductor tape can include a critical current density less than or equal to approximately 4.2 MA/cm2 at 77 K in the absence of an external magnetic field. In another embodiment, the REBCO superconductor tape can include a critical current density greater than or equal to approximately 12 MA/cm2 at approximately 30 K in a magnetic field of approximately 3 T having an orientation parallel to a c-axis.

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.

Abstract: A method and composition for doped HTS tapes having directional flux pinning and critical current.

Abstract: A configuration and a method of constructing a high-temperature superconductor tape including a plurality superconducting filaments sandwiched between a substrate and an overlayer comprising compliant material extending to the substrate through gaps between each superconducting filament thereby isolating each superconducting filament.

Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Abstract: A method and composition for doped HTS tapes having directional flux pinning and critical current.

Abstract: Disclosed is a superconducting article comprising a silver overlayer consisting of no more than about 20% of grains over about 1 ?m, having a minimum Vickers micro-hardness value of about 100, and a porosity of less than about 1%. A method of manufacturing a superconducting tape is disclosed as comprising, deposition of silver, oxygenation at about 400° C. for about 30 minutes, slitting, deposition of silver at a temperature of less than about 250° C., and application of copper.

Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Abstract: A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a polycrystalline or amorphous substrate. An electrically conductive Ion Beam-Assisted Deposition (IBAD) template layer is positioned above the substrate. At least one electrically conductive hetero-epitaxial buffer layer is positioned above the IBAD template layer. The at least one buffer layer has a resistivity of less than 100 ??cm. The semiconductor device and method foster the use of bottom electrodes thereby avoiding complex and expensive lithography processes.

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.

Abstract: A composition for a plurality of configurations of a high-temperature superconductor tape including a superconducting film disposed on a compliant film or sandwiched or captured between at least one pair of compliant film layers.