Abstract: The invention concerns a PMC memory comprising a memory cell (4, 6, 8, 10) and means (16, 18, 20) for heating the cell when being written into the memory.

Abstract: The storage medium comprises an array of memory cells (3) which can be addressed by first (1) and second (2) conductors. Each memory cell (3) comprises one zone (10) of an active layer (8) which is initially electrically insulating and which can be made electrically conductive by means of localized plastic deformation (4), such as to selectively connect the first (1) and second (2) associated conductors. Binary information stored in the memory cell (3) is determined by the electrical conducting state of the corresponding zone (10) of the active layer (8). The active layer (8) can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer (8) which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.

Abstract: This invention relates to a microelectronic device provided with one or several cells or elements comprising at least one first electrode, at least one second electrode, and at least one stack of thin layers between the first electrode and the second electrode, said stack comprising: at least one doped chalcogenide layer that will form a solid electrolyte, on and in contact with the first electrode, at least one layer called the “interface” layer based on a given material different from said chalcogenide, on and in contact with said doped chalcogenide layer, at least one metallic layer called the “ion donor” layer, on and in contact with said “interface” layer, that will form an ion source for said solid electrolyte. The invention also relates to a method for making such a device.

Abstract: A phase-change memory cell including, between two electrical contacts, a portion in a memory material with amorphous-crystalline phase-change and vice versa, as a stack with a central area located between two outmost areas. An interface, inert or quasi-inert from a physico-chemical point of view, is present between the active central area and each passive outmost area. Each passive outmost area is made in a material having a melting temperature higher than that of the material of the active central area.

Abstract: The storage medium comprises an array of memory cells (3) which can be addressed by first (1) and second (2) conductors. Each memory cell (3) comprises one zone (10) of an active layer (8) which is initially electrically insulating and which can be made electrically conductive by means of localised plastic deformation (4), such as to selectively connect the first (1) and second (2) associated conductors. Binary information stored in the memory cell (3) is determined by the electrical conducting state of the corresponding zone (10) of the active layer (8). The active layer (8) can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer (8) which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.