Abstract: Ion implantation systems and beamline assemblies therefor are provided, in which multi-cusped magnetic fields are provided in a beamguide and the beamguide is energized to provide microwave electric fields in a traveling wave along the beamguide passageway. The magnetic and electric fields interact to provide an electron-cyclotron resonance condition for beam containment in the beamguide passageway.

Abstract: The present invention facilitates semiconductor device fabrication by monitoring uniformity of beam current and angle of incidence at various locations throughout an ion beam (e.g., a wider portion of a ribbon beam). One or more uniformity detectors are employed within an ion implantation system (e.g., single wafer based system and/or a multiple wafer based system) and are comprised of a number of elements. The respective elements comprise an aperture that selectively obtains a beamlet from an incident ion beam and a pair of sensors that measure beam current as a function of the incoming angle of the ion beam. The angle of incidence at for particular elements can be determined at least partially from the measured beam current by the pairs of sensors. As a result, generation of an ion beam can be adjusted to improve uniformity as indicated and ion implantation can be performed with an improved uniformity and under tighter process controls.

Abstract: An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.

Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

Abstract: Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system comprises two similar magnets, where the first magnet mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station. The symmetrical system provides equidistant beam trajectories for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.

Abstract: An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.

Abstract: Ion implantation systems and beamline assemblies therefor are provided, in which multi-cusped magnetic fields are provided in a beamguide and the beamguide is energized to provide microwave electric fields in a traveling wave along the beamguide passageway. The magnetic and electric fields interact to provide an electron-cyclotron resonance condition for beam containment in the beamguide passageway.

Abstract: An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam.

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes an electric field generator for generating an electric field relative to a path of travel for the ion beam. A particle located in the ion beam and in a region of the electric field is charged to a polarity according to the ion beam, so that the electric field may urge the charged particle out of the ion beam.

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.

Abstract: A method and apparatus relating to an ion implantation system that employs an ion source for generating a plasma having an ion, and a probe assembly for detecting the ion of the plasma is provided. The probe assembly includes a probe body and a focusing device for extracting the ion from the plasma, and a filter for filtering ions extracted from the plasma.

Abstract: An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam.

Abstract: An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The magnets may cooperatively interact to provide a multi-cusped magnetic field along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway for a given low energy ion beam. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma.

Abstract: An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90° apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180° apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180° apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for

Abstract: Method and apparatus for use in treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. Ions emitted by an ion source are accelerated away from the ion source to form an ion beam. A magnetic field is created for intercepting the ions in the ion beam exiting the source and selectively deflectiing the ions away from an initial trajectory in a generally arcuate scanning motion. The magnetic field is created by synchronized energization of first and second current carrying coils located along an inner surface of a ferromagnetic support. The beam is deflected away from the initial trajectory by a controlled amount in a time varying manner to cause the beam to sweep through an arcuate path and impact the workpiece.

Abstract: A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas.

Abstract: An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (52) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (54) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis. The second mounting portion comprises at least one sliding seal subassembly (80) for maintaining the vacuum, and a support ring (78) and a slide plate (82) located on opposite ends of the sliding seal subassembly.

Abstract: A filament plate for an ion beam source assembly of an ion implantation apparatus is disclosed. The filament plate is comprised of tungsten and includes two spaced apart spiral slits through a width of the plate. A gap width of the slits in not substantially greater than ten times a plasma Debye length of ions generated by electrons emitted into an arc chamber. The plate filament is disposed in an arc chamber into which ionizable source materials are injected. The plate includes two conductive posts press fit into openings of the plate for heating the plate to the thermionic emission temperature. The conductive posts extend through insulated openings in a side wall of the arc chamber.