Abstract: An improved neutral particle detector (52) for an ion implantation system (10) is provided for detecting the neutral particle content of an ion beam (28) which is comprised primarily of neutral particles and positively charged ions. The neutral particle detector (52) comprises (i) a deflector plate (78) residing at a negative electrical potential; (ii) a first collecting electrode (82) residing at a positive electrical potential with respect to said deflector plate (78) for collecting secondary electrons emitted by the deflector plate (78) as a result of neutral particles in the ion beam impacting the deflector plate (78); and (iii) a second collecting electrode (84) residing at a positive electrical potential with respect to said deflector plate (78) for collecting secondary electrons emitted by the deflector plate (78) as a result of positively charged ions in the ion beam impacting the deflector plate (78).

Abstract: An electrostatic triode lens (36) is provided for use in an ion implantation system (10). The lens includes a terminal electrode (37) and an adjustable lens subassembly (40) comprising a suppression electrode (38) and a resolving electrode (39), each having matched curved surfaces (108, 110). The lens subassembly is positioned near the terminal electrode where the beam has a minimal waist in a first (dispersive) plane. Such positioning minimizes the required gaps between electrodes, and thus, helps minimize beam blow-up and the electron depletion region in the deceleration mode of operation. The suppression and resolving electrodes each have first and second portions (38A and 38B, 39A and 39B) separated by a gap (d38, d39). A movement mechanism (60, 62) simultaneously moves the first portions of the suppression and resolving electrodes (38A, 39A) toward and away from the second portions of the suppression and resolving electrodes (38B, 39B), respectively, to adjust the gaps (d38, d39) therebetween.

Abstract: A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region.

Abstract: Method and apparatus for maintaining an ion beam along a beam path from an ion source to an ion implantation station where workpieces are treated with the ion beam. An ion beam neutralizer is positioned upstream from the ion treatment station and includes confinement structure which bounds the ion beam path. An electron source positioned within the confinement structure emits electrons into the ion beam. An array of magnets supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods having encapsulated magnets bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons from leaving the ion beam path and permits lower energy electrons to drift along the ion beam.

Abstract: An ion source for use in an ion implanter. The ion source includes a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A supply of ionizable material routes the material into the gas confinement chamber. An antenna that is supported by the base has a metallic radio frequency conducting segment mounted directly within the gas confinement chamber to deliver ionizing energy into the gas ionization zone.

Abstract: A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region.

Abstract: An ion beam neutralizer has an electron source and an electron deflector for directing electrons from the source into an ion beam. A power supply biases an acceleration grid to a potential suitable for accelerating electrons away from a filament that produces electrons. A second grid defines an electric field through which the electrons move. Electrons pass through the second grid and are deflected by a field between the second grid and a parabolic shaped metal deflector.

Abstract: An ion implantation system including structure to create a dipole field through which the beam passes. The strength and direction of the dipole field is controlled to adjust an angle of impact between the workpiece, typically a semi-conductor wafer and the ion beam. A side-to-side scanning motion is used to provide controlled doping of an entire semiconductor wafer.

Abstract: An ion beam source. The source includes multiple apertures bounded in close proximity by an extraction electrode for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode common to all beam portions is controllably biased to further enhance control over beam portion intensity.

Abstract: An ion beam intensity and emittance measuring system. A substrate supports conductive zones or regions that are impacted by an ion beam. Periodically the conductive regions are discharged through an integrator circuit which produces an output corresponding to the charge buildup on the conductive region. By determining the charge for multiple such regions impacted by an ion beam, a two-dimensional mapping of ion beam intensity vs. position is obtained on essentially a real-time basis. An emittance mask is also placed over the substrate and a measure of the emittance or spread of the ion beam is obtained.

Abstract: An ion implantation featuring an improved beam neutralizer. A cylindrical electron source encircles the ion beam at a location just before the ion beam enters an implantation chamber. Regularly spaced cavities in the electron source contain wire filaments which are energized to emit electrons. The electrons are accelerated through the region of the ion beam and impact an inwardly facing wall of the cylindrical electron support. This causes low-energy electron emissions which neutralize the ion beam. Performance of the beam neutralizer is enhanced by injecting an ionizable gas into the region between the electron emitting surface and the ion beam.

Abstract: An ion source for creating an ion beam. The source includes an ionization chamber having one wall that defines a generally elliptical opening for allowing ions to exit the ionization chamber. Use of an elliptical (in section) ion beam has advantages over a rectangular ion beam which allow the integrity of a relatively high current ion beam to be maintained as ions travel to a beam treatment workstation. A dual configuration extraction electrode assembly also provides for a range of extraction energies from a single source.

Abstract: An ion implantation source used in an ion implantation system. The source produces multiple beam portions which combine to form a large diameter beam of the size of a workpiece. By controlling beam neutralization of the individual beam portions the ion density as a function of position within the cross-section of the beam can be controlled.

Abstract: An ion beam implant system having a source for producing multiple beamlets. The beamlets are emitted from the source and their intensity is controlled by an electrode array under control of a control apparatus. Downstream from the electrode array a resolving magnet shapes the beamlets and directs them to a region where they undergo further acceleration before impinging upon a workpiece. In a preferred technique, the workpiece is typically a silicon wafer and the ions are utilized for controlled doping of that wafer without need for ion beam scanning to selected portions of the workpiece or wafer movement through the ion beam during implantation.

Abstract: An ion beam treatment system for treating silicon wafers placed in the ion beam path. A rotatably mounted wafer pedestal has a plurality of wafer supporting substrates spaced about the pedestal. The substrates are constructed from an elastomer that is chosen for its ability to transfer heat generated by ion collision with the wafers away from the wafers. Each wafer substrate defines a series of elongated depressions across its surface. Certain of these depressions are connected to a pressure source at a wafer loading/unloading station to help acquire the wafers during loading and to facilitate removal of the wafers during unloading. Other depressions vent the interface between the wafers and the substrate to atmosphere to avoid undue pressure build-up on the wafers as they lift off the substrate.

Abstract: A target chamber for a mechanically scanned ion implanter in which semiconductor wafers are maintained in contact with a rotating target disk entirely by body forces, thus eliminating the need for clamping members contacting the wafer surface. The axis of the disk is inclined, and the disk is in the form of a shallow dish having an inclined rim with cooled wafer-receiving stations formed on the inner surface of the rim. Centrifugal force is relied on to force the wafers against the cooled disk. Each wafer-receiving station includes fence structures which are engaged by the wafer during loading and when the disk is spinning. The fence structures are resilient so that wafer damage and thus particulate contamination is minimized. In accordance with another aspect of the invention the ion beam is projected against the wafers obliquely to the radius of the disk as to minimize striping effects and overscan.

Abstract: Apparatus for treating workpieces by directing a beam at the workpieces, with resultant heating of the workpieces, the apparatus including a moving support element for carrying the workpieces past a source of the beam in both a scanning direction and in a control direction generally orthogonal to the scanning direction, an infrared detector mounted to move in the control direction but not in the scanning direction to receive black body radiation from the workpieces as they pass under the detector, and means to correct black body radiation measurements of said workpieces for noise resulting from dark current variation, whereby an indication of the temperature of the individual workpieces can be obtained as workpiece movements and beam treatment occur.

Abstract: A high resolution detector having a scintillation crystal for receiving incident X-rays at a front face and interacting with the radiation to generate corresponding visible light radiation. Silicon photodiode arrays are positioned on top and bottom lateral faces of the scintillation crystal to receive the visible light that is radiated laterally with respect to the direction of propagation of the incident X-rays. Photodiode elements in each photodiode array extend from the forward face of the scintillation crystal in the direction of propagation of the incident X-rays. The length of the photodiode elements determines the radiation stopping power of the high resolution detector and the height of the front face of the scintillation crystal determines the resolution of the detector. The height of the forward face of the crystal may be made small with respect to the length of the photodiode elements to provide a detector having high resolution and high radiation stopping power.