Abstract: Graphene particulates, especially graphene nanoribbons (GNRs) and graphene quantum dots Ds and and a high-throughput process for the production of such particulates is provided. The graphene particulates are produced by a nanotomy process in which graphene blocks are cut from a source of graphite and then exfoliated into a plurality of graphene particulates. Graphene particulates having narrow widths, on the order of 100 nm or less, can be produced having band gap properties suitable for use in a variety of electrical applications.

Abstract: This invention is directed toward a bioelectronic cell gated nanodevice. The bioelectronic cell gated nanodevice comprises a plurality of bioelectric cells deposited on a fiber of a nanodevice. The bioelectronic cells of the nanodevice act as a gate, allowing current to be transmitted when the bioelectronic cells are exposed to an actuating chemical. The present invention also provides methods for constructing such a device.

Abstract: Coulomb blockade in metal nanoparticles isolated by a tunneling barrier is considered to be a potential solution to low power, robust, high-speed electronic switching device operating at single-electron transport. However, the switching voltage equal to the threshold voltage to overcome coulomb blockade for these devices is typically in the 10 mV range and/or operating at currents well below 1 nA, which inhibits their application as a practical device. Theoretically, a one dimensional nanoparticle necklace is predicted to be an ideal structure to achieve higher switching voltages. The present invention provides a single-electron device composed of a necklace of about 5000 nanoparticles. The linear necklace is self-assembled by interfacial phenomena along a triple-phase line of fiber, a substrate and electrolyte containing nanoparticles. The I-V measurements on the system show both coulomb blockade and staircase, with high currents and high threshold voltage of 1-3 V.

Abstract: The present invention provides a single-electron device composed of a necklace of about 5000 nanoparticles. The linear necklace is self-assembled by interfacial phenomena along a triple-phase line of fiber, a substrate and electrolyte containing nanoparticles. A variety of combinations of nanoparticles, such as Au and CdS nanoparticles, may be used to form a necklace. The I-V measurements on the system show both coulomb blockade and staircase, with high currents and high threshold voltage of 1-3 V. The present invention also provides methods for constructing such a device.

Abstract: The present invention provides a single-electron device composed of a necklace of about 5000 nanoparticles. The linear necklace is self-assembled by interfacial phenomena along a triple-phase line of fiber, a substrate and electrolyte containing nanoparticles. A variety of combinations of nanoparticles, such as Au and CdS nanoparticles, may be used to form a necklace. The I-V measurements on the system show both coulomb blockade and staircase, with high currents and high threshold voltage of 1-3 V. The present invention also provides methods for constructing such a device.