Abstract: A process for polishing a semiconductor body according to an embodiment of the present invention includes the steps of providing a semiconductor body, forming a barrier layer over a portion of the semiconductor body, and forming at least one layer including copper over a portion of the barrier layer. The process further includes the steps of polishing at least a portion of the layer including copper with a first polishing slurry composition and changing the polishing composition from the first slurry composition to a second polishing slurry composition. The process also includes the steps of polishing at least a portion of the layer including copper with the second slurry composition and polishing at least a portion of the barrier layer with the second slurry composition. Moreover, the second slurry composition includes an effective amount of a copper oxide inhibitor to substantially inhibit copper oxide formation. In an embodiment, the effective amount of the copper oxide inhibitor is between about 0.