Abstract: A winch-winding assembly for use with a flatbed winch, for example. The winch-winding assembly can be used for winding tie-down straps. The winch-winding assembly can include a gear system, a drive shaft connected to the gear system in order to cause rotation of the gear system and an engagement arm being configured to engage with and rotate part of the flatbed winch. A drill-support mechanism can be further provided to guide or support a body of a hand-held drill during engagement and rotation of the drive shaft. The engagement arm can comprise a stem and a finger mounted to the stem and being displaceable between a retracted position disengaging the flatbed winch, and an extended position engaging the flatbed winch, to rotate the winch drum in response to rotation of the stem.

Abstract: Mid-infrared-transparent optical fiber products with enhanced resistance to OH diffusion are disclosed, which may be used fiber laser oscillator and amplifiers systems. In one embodiment, an optical fiber product may include optical fiber configured for propagation of mid-infrared radiation toward a light-radiating endface of or coupled to the optical fiber, and a diffusion barrier disposed on the light-radiating endface and configured for allowing the mid-infrared radiation emanating from the light-radiating endface to pass therethrough and for preventing OH diffusion therethrough toward the light-radiating endface.

Abstract: Mid-infrared-transparent optical fiber products with enhanced resistance to OH diffusion are disclosed, which may be used fiber laser oscillator and amplifiers systems. In one embodiment, an optical fiber product may include optical fiber configured for propagation of mid-infrared radiation toward a light-radiating endface of or coupled to the optical fiber, and a diffusion barrier disposed on the light-radiating endface and configured for allowing the mid-infrared radiation emanating from the light-radiating endface to pass therethrough and for preventing OH diffusion therethrough toward the light-radiating endface.

Abstract: A system and method for system for controlling power supplied to electronic components (12) powered by a battery (11) of a vehicle (10), the system comprising: a vehicle control unit (14) including a controller (16) and a transmitter (18) for transmitting wirelessly vehicle control signals (20); a wireless latching relay (22) including a receiver (24) configured for receiving the vehicle control signals (20) from the transmitter (18), and a latching relay (26); wherein the relay (26) is connected in series with the negative terminal (25) or positive terminal (29) of the battery (11).

Abstract: Mid-infrared-transparent optical fiber products with enhanced resistance to OH diffusion are disclosed, which may be used fiber laser oscillator and amplifiers systems. In one embodiment, an optical fiber product may include optical fiber configured for propagation of mid-infrared radiation toward a light-radiating endface of or coupled to the optical fiber, and a diffusion barrier disposed on the light-radiating endface and configured for allowing the mid-infrared radiation emanating from the light-radiating endface to pass therethrough and for preventing OH diffusion therethrough toward the light-radiating endface.

Abstract: The mid-infrared laser system has an amplifier including at least one pump laser adapted to generate a pump laser beam and a length of fiber made of a low phonon energy glass and having at least one laser-active doped region between a first end and a second end, and a seed laser to generate a seed laser beam having a seed optical spectrum in the mid-infrared. The seed laser beam is launched into the first end to generate a mid-infrared laser beam outputted from the second end via stimulated emission upon pumping of the at least one laser-active doped region with the pump laser beam. When the power of the pump laser exceeds a spectrum modification threshold, the mid-infrared laser beam has an output optical spectrum being broadened relative to the seed optical spectrum.

Abstract: The mid-infrared laser system has an amplifier including at least one pump laser adapted to generate a pump laser beam and a length of fiber made of a low phonon energy glass and having at least one laser-active doped region between a first end and a second end, and a seed laser to generate a seed laser beam having a seed optical spectrum in the mid-infrared. The seed laser beam is launched into the first end to generate a mid-infrared laser beam outputted from the second end via stimulated emission upon pumping of the at least one laser-active doped region with the pump laser beam. When the power of the pump laser exceeds a spectrum modification threshold, the mid-infrared laser beam has an output optical spectrum being broadened relative to the seed optical spectrum.

Abstract: A method of removing residues from an integrated device, in particular residues resulting from processing in HF vapor, is disclosed wherein the fabricated device is exposed to dry water vapor for a period of time sufficient to dissolve the residues in the dry water vapor.

Abstract: A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.

Abstract: A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.

Abstract: A method of removing residues from an integrated device, in particular residues resulting from processing in HF vapor, is disclosed wherein the fabricated device is exposed to dry water vapor for a period of time sufficient to dissolve the residues in the dry water vapor.

Abstract: A cobalt silicide fabrication process entails first depositing a cobalt layer (120) on a silicon-containing EPROM region. A titanium layer (130) is formed over the cobalt layer by ionized physical vapor deposition (“IPVD”) to protect the cobalt layer from contaminant gases. Cobalt of the cobalt layer is reacted with silicon of the EPROM region to form a cobalt silicide layer (210) after which the titanium layer and any unreacted cobalt are removed. Use of IPVD to form the titanium layer by improves the step coverage to produce a better cobalt silicide layer.

Abstract: Conductive material is deposited by ionized physical vapor deposition on an insulator, possibly to contact a conductive layer exposed by an opening in the insulator. At the beginning of the deposition, the wafer bias is low (possibly zero), to prevent the insulator re-sputtering by the ionized conductive material as this material is being deposited. The contact resistance is improved (reduced) as a result.

Abstract: An interconnect for a substructure having an opening (470) with a rounded perimetrical top edge (480) includes a titanium nitride layer (150) and a tungsten layer (160). The titanium layer overlies the substructure, extends into the opening, has a substantially columnar grain structure, and is less than 30 nm thick. The tungsten layer overlies/contacts the titanium nitride layer and extends into the opening. A titanium layer (140) normally no more than 36 nm thick is typically situated between the substructure and the titanium nitride layer.

Abstract: In a polishing process (e.g. CMP), the endpoint is declared after (a) detecting that the friction between the polishing tool and the structure being polished is rising, then (b) determining that the friction is falling, then (c) waiting for a predetermined period of time (which can be zero). This algorithm results in reduced over-polishing in some embodiments. Other embodiments are also described.

Abstract: A tungsten-based interconnect is created by first providing a structure with an opening (464/470) in a structure and then rounding the top edge of the opening. A titanium nitride layer (150) is physically vapor deposited to a thickness less than 30 nm, typically less than 25 nm, over the structure and into the opening. Prior to depositing the titanium nitride layer, a titanium layer (140) may be deposited over the structure and into the opening such that the later-formed titanium nitride layer contacts the titanium layer. In either case, the titanium nitride layer is heated, typically to at least 600° C., while being exposed to nitrogen and/or a nitrogen compound. A tungsten layer (160) is subsequently chemically vapor deposited on the titanium nitride layer and into the opening.

Abstract: In a cobalt silicide fabrication process, cobalt is formed on a wafer, then titanium is formed over the cobalt, and the wafer is heated to react the cobalt with the silicon. Then the titanium and the unreacted cobalt are removed. The titanium formed by ionized physical vapor deposition to achieve a good step coverage. In some embodiments, the wafer holding pedestal bias is turned off when the titanium is being deposited.

Abstract: In a polishing process (e.g. CMP), the endpoint is declared after (a) detecting that the friction between the polishing tool and the structure being polished is rising, then (b) determining that the friction is falling, then (c) waiting for a predetermined period of time (which can be zero). This algorithm results in reduced over-polishing in some embodiments. Other embodiments are also described.

Abstract: Conductive material is deposited by ionized physical vapor deposition on an insulator, possibly to contact a conductive layer exposed by an opening in the insulator. At the beginning of the deposition, the wafer bias is low (possibly zero), to prevent the insulator re-sputtering by the ionized conductive material as this material is being deposited. The contact resistance is improved (reduced) as a result.

Abstract: Conductive material is deposited by ionized physical vapor deposition on an insulator, possibly to contact a conductive layer exposed by an opening in the insulator. At the beginning of the deposition, the wafer bias is low (possibly zero), to prevent the insulator re-sputtering by the ionized conductive material as this material is being deposited. The contact resistance is improved (reduced) as a result.