Patents by Inventor Vincent Fortin

Vincent Fortin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030001265
    Abstract: Titanium nitride layers a less than 30 nm thickness are formed by physical vapor deposition and used as barrier layers for tungsten deposition. The titanium nitride layers are annealed in the presence of nitrogen or a nitrogen compound.
    Type: Application
    Filed: June 13, 2001
    Publication date: January 2, 2003
    Inventor: Vincent Fortin
  • Publication number: 20030003721
    Abstract: Titanium nitride layers a less than 30 nm thickness are formed by physical vapor deposition and used as barrier layers for tungsten deposition. The titanium nitride layers are annealed in the presence of nitrogen or a nitrogen compound.
    Type: Application
    Filed: March 27, 2002
    Publication date: January 2, 2003
    Inventor: Vincent Fortin
  • Patent number: 6372671
    Abstract: A dielectric layer of silica glass is formed by plasma enhanced chemical vapor deposition (PECVD) wherein a gaseous precursor of the dielectric layer is supplied to a deposition chamber in the presence of an electromagnetic field. The supply of the gaseous precursor is discontinued while continuing to maintain the electromagnetic field for a delay time exceeding 0.5 seconds after the discontinuation of the supply of the gaseous precursor. This improves the hydrophilic properties of said film. A siloxane-based SOG film is deposited on the dielectric layer.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: April 16, 2002
    Assignee: Zarlink Semiconductor Inc.
    Inventor: Vincent Fortin