Abstract: There is disclosed a transition detection, validation and memorization (TDVM) circuit that detects the position of a transition in a stream of serially transmitted binary data (bits) that are over sampled and generates a control signal indicating which sampled signal represents the best the data. The incoming data stream is over sampled by the n phases of a multiple phase clock signal. The frequency of the multiphase clock signal is the same or half of the frequency of the incoming data for stability reasons. The n over sampled signals (S) are fed in the TDVM circuit which is comprised of three sections. The first section detects the transition at the positions of two consecutive sampled signals according to a specific signal processing which requires to perform twice, three comparisons on six consecutive over sampled signals (the central one being excluded at each time). The second section validates the second detection as the transition position.

Abstract: There is disclosed a data recovery (DR) circuit including an over sampling (OS) circuit, a transition detection (TD) circuit and a sample selection/data alignment (SSDA) circuit. A multiphase clock generating circuit delivering n phases is coupled to each of these circuits. The OS circuit over samples the received digital data stream and produces n sampled signals at each clock period. The TD circuit is configured to detect a data transition (if any) and to generate n select signals, only one of which is active and represents a determined delay with respect to the transition position, indicating thereby which over sampled signal is the best to be retained. The SSDA circuit is configured to generate the recovered (retimed) data signal that is aligned with a predefined phase of said multiphase clock signal. The data recovery circuit is well adapted to high speed serial data communications between integrated circuits/systems on digital networks.

Abstract: A built-in self test system for testing a clock and data recovery circuit is disclosed. The present invention provides a built-in self test circuit which operates with high speed phase lock loop. The built-in circuit comprises data generating means for generating a test data byte and serializing means coupled to the data generating means for converting the test data byte into serial test data. The clock and data recovery means are coupled to the output of the serializing means for recovering the clock and test data from the serial test data. A deserializing means coupled to the output of the clock and data recovery means converts the recovered serial test data into a recovered test data byte, and analyzing means connected to the output of the deserializing means compares the recovered test data byte to the initial test data byte.

Abstract: The present invention provides an apparatus for setting the free-running frequency of a VCO to a reference frequency. The apparatus comprises frequency range means for setting the VCO within a VCO frequency range among a plurality of VCO frequency ranges. First counting means are operable to count to a first value at the VCO frequency rate and to provide a first ending signal when the first value is reached. Second counting means are operable to count to a second value at the reference frequency rate and to provide a second ending signal when the second value is reached. The second counting means are also operable to provide a reference count value when the first value is reached by the first counting means. A state machine is responsive to the first and second counting means for selecting a VCO frequency range among the plurality of VCO frequency ranges such that the VCO free-running frequency obtained through the selected range gives the closest value to the reference frequency.

Abstract: A manufacturing method is provided for producing a stacked semiconductor structure including: depositing a first thick passivating layer onto the base structure; forming first stud openings in the first thick passivating layer exposing at least one active region and/or one of the polysilicon lines; depositing a first layer of a conductive material to fill the first stud openings and define first contact studs, the upper part of some of the first contact studs comprising the gate electrodes of PFET devices; planarizing the structure to make the top surface of the first contact studs coplanar with the surface of the first thick passivating layer; depositing a thick insulating layer to form the gate dielectric of PFET devices and patterning it to define contact openings to expose selected first contact studs at desired locations; depositing a layer of polysilicon; patterning the polysilicon layer to define polysilicon lands containing the first contact studs at the desired locations; selectively implanting to de