Abstract: A display device includes a plurality of gate lines, data lines, first external gate tracking lines, and second external gate tracking lines. The first external gate tracking lines are substantially disposed in a border region of a substrate, and electrically connected with corresponding gate lines. The second external gate tracking lines are substantially disposed in the border region of the substrate, and electrically connected with corresponding gate lines. One of the first external gate tracking lines and a corresponding second external gate tracking line at least partially overlap with each other.

Abstract: A method of making a semiconductor device includes determining, by a processor, a first pattern density of a first region, determining a second pattern density of a second region, determining a pattern density gradient from the first region to the second region, determining whether the pattern density gradient exceeds a pattern density gradient threshold and performing a placement or a routing of the semiconductor device if the pattern density gradient is less than or equal to the pattern density gradient threshold.

Abstract: A method of making a semiconductor device includes arranging a first cell and a second cell, determining, by a processor, a first pattern density of a first cell, determining a second pattern density of a second cell, determining a pattern density gradient from the first pattern density to the second pattern density, determining whether the pattern density gradient exceeds a pattern density gradient threshold, and indicating a design change if the pattern density gradient exceeds than the pattern density gradient threshold.

Abstract: A method of making a semiconductor device includes arranging a first cell and a second cell, determining, by a processor, a first pattern density of a first cell, determining a second pattern density of a second cell, determining a pattern density gradient from the first pattern density to the second pattern density, determining whether the pattern density gradient exceeds a pattern density gradient threshold, and indicating a design change if the pattern density gradient exceeds than the pattern density gradient threshold.

Abstract: An integrated circuit structure includes a plurality of power or ground rails for an integrated circuit, the plurality of power or ground rails vertically separated on a plane, a plurality of functional cells between the plurality of power rails or between the plurality of ground rails or both, and a jumper connection between the vertically separated power rails or ground rails, the jumper connection within a vertically aligned gap among the plurality of functional cells. A method of mitigating IR drop and electromigration affects in an integrated circuit includes forming a plurality of power rails or ground rails, each of the power rails or ground rails on separate vertical levels of a plane of an integrated circuit layout and connecting with a jumper connection at least two power rails or two ground rails, the jumper connection within a vertically aligned gap among cells of the integrated circuit.

Abstract: A method includes retrieving a first component information of a secured portion of a package, wherein the first component information is encrypted. The step of retrieving includes decrypting the first component information. A thermal resistance-network (R-network) is generated from the decrypted first component information. A temperature map of the package is generated using the thermal R-network and a second component information of an unsecured portion of the package, wherein the secured portion and the unsecured portion are bonded to each other.

Abstract: A method includes retrieving a first component information of a secured portion of a package, wherein the first component information is encrypted. The step of retrieving includes decrypting the first component information. A thermal resistance-network (R-network) is generated from the decrypted first component information. A temperature map of the package is generated using the thermal R-network and a second component information of an unsecured portion of the package, wherein the secured portion and the unsecured portion are bonded to each other.

Abstract: A pixel structure and a method of manufacturing a pixel structure are provided. The pixel structure includes an active device, a gate insulation layer, a dielectric insulation layer, a capacitance electrode, a protection layer and a pixel electrode. The active device includes a gate, a semiconductor channel layer, a source and a drain. The dielectric insulation layer covers the semiconductor channel layer. A dielectric index of the dielectric insulation layer is greater than a dielectric index of the gate insulation layer. The capacitance electrode is overlapped with the drain. The capacitance electrode, the drain and the dielectric insulation layer between the two constitute a storage capacitor structure. The protection layer is disposed on the dielectric insulation layer and the capacitance electrode is located between the protection layer and the dielectric insulation layer. The pixel electrode is disposed on the protection layer and connected to the drain of the active device.

Abstract: A display panel including an active device array substrate, an opposite substrate and a display medium is provided. The active device array substrate includes a substrate, scan lines, data lines, pixel units, and data signal transmission lines. The scan lines and data lines define a plurality of pixel regions on the substrate. Each pixel unit is disposed within one of the pixel regions respectively, and each pixel unit includes a plurality of sub-pixel units. The sub-pixel units within the same pixel unit are electrically connected with the same data line, and each sub-pixel unit within the same pixel unit is electrically connected with one of the scan lines respectively. Each data signal transmission line is electrically connected with one of the data lines, and an extending direction of the data signal transmission line is substantially parallel with an extending direction of the scan lines.

Abstract: A display device includes a plurality of gate lines, data lines, first external gate tracking lines, and second external gate tracking lines. The first external gate tracking lines are substantially disposed in a border region of a substrate, and electrically connected with corresponding gate lines. The second external gate tracking lines are substantially disposed in the border region of the substrate, and electrically connected with corresponding gate lines. One of the first external gate tracking lines and a corresponding second external gate tracking line at least partially overlap with each other.

Abstract: A display panel including an active device array substrate, an opposite substrate and a display medium is provided. The active device array substrate includes a substrate, scan lines, data lines, pixel units, and data signal transmission lines. The scan lines and data lines define a plurality of pixel regions on the substrate. Each pixel unit is disposed within one of the pixel regions respectively, and each pixel unit includes a plurality of sub-pixel units. The sub-pixel units within the same pixel unit are electrically connected with the same data line, and each sub-pixel unit within the same pixel unit is electrically connected with one of the scan lines respectively. Each data signal transmission line is electrically connected with one of the data lines, and an extending direction of the data signal transmission line is substantially parallel with an extending direction of the scan lines.