Abstract: A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.

Abstract: A memory device comprises: an array of memory cells arranged in a plurality of columns in a first direction and a plurality of rows in a second direction, wherein each memory cell in the array comprises: a select transistor, wherein a source terminal of the select transistor is coupled to a source line, and wherein a gate terminal of the select transistor is coupled to a word line, and a memory element coupled in series with the select transistor, wherein a first end of the memory element is coupled to a drain terminal of the select transistor, and wherein a second end of the memory element is coupled to a bit line; and a control circuit configured to provide an unselected source line voltage to source lines of unselected memory cells before providing a selected word line voltage to a word line of a selected memory cell.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.

Abstract: A memory device comprises: an array of memory cells arranged in a plurality of columns in a first direction and a plurality of rows in a second direction, wherein each memory cell in the array comprises: a select transistor, wherein a source terminal of the select transistor is coupled to a source line, and wherein a gate terminal of the select transistor is coupled to a word line, and a memory element coupled in series with the select transistor, wherein a first end of the memory element is coupled to a drain terminal of the select transistor, and wherein a second end of the memory element is coupled to a bit line; and a control circuit configured to provide an unselected source line voltage to source lines of unselected memory cells before providing a selected word line voltage to a word line of a selected memory cell.

Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.

Abstract: A memory device includes an array of resistive memory cells wherein each pair of resistive memory cells includes a first switching element electrically coupled in series to a first resistive memory element and a second switching element electrically coupled in series to a second resistive memory element. A source of the first switching element and a source of the second switching element receive a common source line signal.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.

Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.

Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.

Abstract: A memory device includes an array of resistive memory cells wherein each pair of resistive memory cells includes a first switching element electrically coupled in series to a first resistive memory element and a second switching element electrically coupled in series to a second resistive memory element. A source of the first switching element and a source of the second switching element receive a common source line signal.

Abstract: A memory device includes an array of resistive memory cells wherein each pair of resistive memory cells includes a first switching element electrically coupled in series to a first resistive memory element and a second switching element electrically coupled in series to a second resistive memory element. A source of the first switching element and a source of the second switching element receive a common source line signal.

Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.