Abstract: A memory space of a module connected to a memory controller via a memory interface may be used as a command buffer. Commands received by the module via the command buffer are executed by the module. The memory controller may write to the command buffer out-of-order. The memory controller may delay or eliminate writes to the command buffer. Tags associated with commands are used to specify the order commands are executed. A status buffer in the memory space of the module is used to communicate whether commands have been received or executed. Information received via the status buffer can be used as a basis for a determination to re-send commands to the command buffer.

Abstract: A memory device is placed in a mode that redefines the command set used to control the memory device. This may occur either in anticipation of the memory system falling out of calibration, or after it has already fallen out of calibration. The redefined command set is designed such that it may be reliably received by the memory device at the specified rate even if the memory system has fallen out of calibration. The redefined command set is then used to issue command(s) to recalibrate one or more communication links such that they can exchange data, commands, and/or addresses at a specified rate. After recalibration, the memory device is returned to responding to the original command set.

Abstract: A memory space of a module connected to a memory controller via a memory interface may be used as a command buffer. Commands received by the module via the command buffer are executed by the module. The memory controller may write to the command buffer out-of-order. The memory controller may delay or eliminate writes to the command buffer. Tags associated with commands are used to specify the order commands are executed. A status buffer in the memory space of the module is used to communicate whether commands have been received or executed. Information received via the status buffer can be used as a basis for a determination to re-send commands to the command buffer.

Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.

Abstract: A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes side-band circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.

Abstract: A multi-chip package is provided that has at least a first, second and third chip, each comprising a top and bottom surface. The multi-chip package also has a package substrate for interfacing with a printed circuit board (PCB). The chips and the package substrate are housed within an encapsulation material. The bottom surface of the first chip is attached to the package substrate. The top surface of the first chip has a first plurality of landing pads, which serve as a mechanical and electrical interface between the first and second chip. The bottom surface of the second chip has a second plurality of landing pads that serve as a mechanical and electrical interface between the second and first chip. Additionally, the top surface of the second chip has a third plurality of landing pads that serve as a mechanical and electrical interface between the second and third chip.

Abstract: A refresh scheduler is configured to refresh memory cells of a memory device according to a plurality of refresh intervals. The various refresh intervals are determined in response to refresh errors.

Abstract: Embodiments of the present invention generally provide techniques and apparatus for altering the functionality of a multi-chip package (MCP) without requiring entire replacement of the MCP. The MCP may be designed with a top package substrate designed to interface with an add-on package that, when sensed by the MCP, alters the functionality of the MCP.

Abstract: Embodiments of the invention generally provide a system, method and memory device for accessing memory. One embodiment includes synchronization circuitry configured to determine timing skew between a first memory device and a second memory device, and introduce a delta delay to at least one of the first memory device and the second memory device to adjust the timing skew.

Abstract: Embodiments of the invention generally provide a system, method, and memory device for accessing memory. In one embodiment, a first memory device includes command decoding logic configured to decode commands issued to the first memory device and a second memory device, while command decoding logic of the second memory device is bypassed.

Abstract: The present invention is generally related to integrated circuit devices, and more particularly, to methods and systems of a multi-chip package (MCP) containing a self-diagnostic scheme for detecting errors in the MCP. The MCP generally comprises a controller, at least one volatile memory chip having error detection logic, at least one non-volatile memory chip, and at least one fail signature register for storing fail signature data related to memory errors detected in the MCP. The controller can poll the fail signature register for fail signature data related to memory errors stored therein. Upon detection of fail signature data, the controller can store the fail signature data on a fail signature register located on a non-volatile memory.

Abstract: Embodiments of the invention generally provide an apparatus and technique for sharing an internally generated voltage between devices of a multi-chip package (MCP). The internally generated voltage may be shared via a conductive structure that electrically couples the devices and carries the internally generated voltage.

Abstract: A multi-chip package is provided that has at least a first, second and third chip, each comprising a top and bottom surface. The multi-chip package also has a package substrate for interfacing with a printed circuit board (PCB). The chips and the package substrate are housed within an encapsulation material. The bottom surface of the first chip is attached to the package substrate. The top surface of the first chip has a first plurality of landing pads, which serve as a mechanical and electrical interface between the first and second chip. The bottom surface of the second chip has a second plurality of landing pads that serve as a mechanical and electrical interface between the second and first chip. Additionally, the top surface of the second chip has a third plurality of landing pads that serve as a mechanical and electrical interface between the second and third chip.

Abstract: The present invention is generally related to integrated circuit devices, and more particularly, to methods and systems of a multi-chip package (MCP) containing a self-diagnostic scheme for detecting errors in the MCP. The MCP generally comprises a controller, at least one volatile memory chip having error detection logic, at least one non-volatile memory chip, and at least one fail signature register for storing fail signature data related to memory errors detected in the MCP. The controller can poll the fail signature register for fail signature data related to memory errors stored therein. Upon detection of fail signature data, the controller can store the fail signature data on a fail signature register located on a non-volatile memory.

Abstract: Embodiments of the invention generally provide a system, method, and memory device for accessing memory. In one embodiment, a first memory device includes command decoding logic configured to decode commands issued to the first memory device and a second memory device, while command decoding logic of the second memory device is bypassed.

Abstract: Embodiments of the invention generally provide a system, method and memory device for accessing memory. One embodiment includes synchronization circuitry configured to determine timing skew between a first memory device and a second memory device, and introduce a delta delay to at least one of the first memory device and the second memory device to adjust the timing skew.

Abstract: Embodiments of the invention generally provide an apparatus and technique for sharing an internally generated voltage between devices of a multi-chip package (MCP). The internally generated voltage may be shared via a conductive structure that electrically couples the devices and carries the internally generated voltage.

Abstract: Embodiments of the present invention generally provide techniques and apparatus for altering the functionality of a multi-chip package (MCP) without requiring entire replacement of the MCP. The MCP may be designed with a top package substrate designed to interface with an add-on package that, when sensed by the MCP, alters the functionality of the MCP.

Abstract: A refresh scheduler is configured to refresh memory cells of a memory device according to a plurality of refresh intervals. The various refresh intervals are determined in response to refresh errors.

Abstract: A ring oscillator (and test circuit incorporating the ring oscillator and test method therefor) includes an odd number of elements interconnected in a serially-connected infinite loop, each oscillator element having an associated programmable delay feature. The circuit can be used to measure effects of Negative Bias Temperature Instability (NBTI) in p-channel MOSFETs (PFETs).