Abstract: A multifunctional polymer comprising a polymeric chain having chromophore groups and cross-linking sites is suitable as a resist material and especially as the underlayer for bilayer and top surface imaging strategies. The multifunctional polymer can function as an antireflective coating, planarizing layer or etch resistant hard mask.

Abstract: A process of silylation of object surfaces using a mixture of a silylation agent in admixture with an inert liquified gas, such as carbon dioxide.

Abstract: The invention relates generally to photolithographic techniques, and particularly, but not by way of limitation, to a method for preventing the collapse of the image pattern during the stage of drying the image. The invention also relates to structures fabricated using the inventive method.

Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

Abstract: A workpiece holder for processing a workpiece in a chamber of a liquified fluid. In one embodiment, the workpiece holder includes a cylindrically shaped rotator having an exterior wall and at least one fluid guide on the exterior wall. The rotator is adapted to rotate and provide fluid flow across a first end of the rotator, and is adapted to provide fluid flow and mixing perpendicular to a surface of the first end of the rotator. A fixture is coupled to the first end of the rotator for securing the workpiece to the first end of the rotator.

Abstract: A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.

Abstract: A method and an apparatus, the apparatus including appropriate valves and conduits, for increasing throughput in pressurized fluid processing including storing in a storage chamber of the apparatus a quantity of fluid at a pressure higher than a pressure at which an operation is to take place, while a processing chamber is depressurized to allow reception of a new object; sealing the processing chamber; and allowing fluid stored in the storage chamber to pass to the processing chamber to re-pressurize the processing chamber before performing the operation. The fluid may be preheated in the storage chamber to further reduce processing times.

Abstract: A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.

Abstract: A process of silylation of object surfaces using a mixture of a silylation agent in admixture with an inert liquified gas, such as carbon dioxide.

Abstract: A process of drying a cast film polymeric disposed upon a workpiece. In this process a cast polymeric film, which includes a volatile organic compound therein, disposed on a workpiece, is contacted with an extraction agent which may be liquid carbon dioxide or supercritical carbon dioxide.

Abstract: A process of drying a cast film polymeric disposed upon a workpiece. In this process a cast polymeric film, which includes a volatile organic compound therein, disposed on a workpiece, is contacted with an extraction agent which may be liquid carbon dioxide or supercritical carbon dioxide.

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

Abstract: The invention provides photoresists and resist preparative methods. Methods of the invention include treatment of a resist resin with methylene chloride or other organic solvent to remove low molecular weight materials. It has been found that the treated resin can be formulated into resists that provide manufactured electronic devices with significantly reduced defects.

Abstract: Real-time analysis of output volatiles upon UV exposure is achieved using a laboratory scale apparatus. The methods and apparatus use external or internal radiation sources, especially broad band external UV radiation. The apparatus and methods of the invention are especially useful in the analysis and screening of photoresist materials. The apparatus preferably uses FTIR or MS analysis.

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

Abstract: A method and an apparatus, the apparatus including appropriate valves and conduits, for increasing throughput in pressurized fluid processing including storing in a storage chamber of the apparatus a quantity of fluid at a pressure higher than a pressure at which an operation is to take place, while a processing chamber is depressurized to allow reception of a new object; sealing the processing chamber; and allowing fluid stored in the storage chamber to pass to the processing chamber to re-pressurize the processing chamber before performing the operation. The fluid may be preheated in the storage chamber to further reduce processing times.

Abstract: An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.

Abstract: A negative resist composition, comprising:

Abstract: An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.

Abstract: The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.