Patents by Inventor Wayne M. Moreau

Wayne M. Moreau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Speed enhancers for acid sensitized resists
    Patent number: 5164278
    Abstract: Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.
    Type: Grant
    Filed: March 1, 1990
    Date of Patent: November 17, 1992
    Assignee: International Business Machines Corporation
    Inventors: William R. Brunsvold, Christopher J. Knors, Melvin W. Montgomery, Wayne M. Moreau, Kevin M. Welsh
  • Highly sensitive dry developable deep UV photoresist
    Patent number: 5023164
    Abstract: Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.
    Type: Grant
    Filed: October 23, 1989
    Date of Patent: June 11, 1991
    Assignee: International Business Machines Corporation
    Inventors: William R. Brunsvold, Philip Chiu, Willard E. Conley, Jr., Dale M. Crockatt, Melvin W. Montgomery, Wayne M. Moreau
  • Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
    Patent number: 4942108
    Abstract: The dissolution rate in alkaline developer solutions of image-wise exposed photoresist systems based on diazoquinone sensitized polyamic acid is reduced to prepare relief images of fine line resolution by reducing the acidity of the polyamic acid prior to exposure.
    Type: Grant
    Filed: September 8, 1989
    Date of Patent: July 17, 1990
    Assignee: International Business Machines Corporation
    Inventors: Wayne M. Moreau, Kaolin N. Chiong, Ming-Fea Chow, Nancy W. Snyder
  • Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
    Patent number: 4880722
    Abstract: The dissolution rate in alkaline developer solutions of image-wise exposed photoresist systems based on diazoquinone sensitized polyamic acid is reduced to prepare relief images of fine line resolution by reducing the acidity of the polyamic acid prior to exposure.
    Type: Grant
    Filed: October 8, 1987
    Date of Patent: November 14, 1989
    Assignee: International Business Machines Corporation
    Inventors: Wayne M. Moreau, Kaolin N. Chiong
  • Process for forming resist masks utilizing O-quinone diazide and pyrene
    Patent number: 4464458
    Abstract: A resist system for semiconductor device fabrication comprised of bottom positive resist layer of a diazoquinone/novolak resist applied to a substrate and overcoated with a like or different diazoquinone/novolak top resist layer which has been sensitized with pyrene and/or its derivatives.
    Type: Grant
    Filed: December 30, 1982
    Date of Patent: August 7, 1984
    Assignee: International Business Machines Corporation
    Inventors: Ming-Fea Chow, Edward C. Fredericks, Wayne M. Moreau
  • Preparation of resist image with methacrylate polymers
    Patent number: 4011351
    Abstract: A positive resist image is produced by exposure of a layer of non-crosslinked polymeric material to high energy radiation in a predetermined pattern, the polymeric material containing alkyl methacrylate units and polymerized units of certain other ethylenically unsaturated monomers, followed by removal of the electron degraded material from the exposed areas.
    Type: Grant
    Filed: January 29, 1975
    Date of Patent: March 8, 1977
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III
  • Positive polymeric electron beam resists of very great sensitivity
    Patent number: 3996393
    Abstract: It has been discovered that the sensitivity of positive acting polymeric electron beam resists is increased by well over an order of magnitude by using polymers having a molecular weight of at least one million, thereby making it possible to reduce the required radiation to below 3 .times. 10.sup..sup.-6 coulombs/cm.sup.2.
    Type: Grant
    Filed: March 25, 1974
    Date of Patent: December 7, 1976
    Assignee: International Business Machines Corporation
    Inventors: Charles A. Cortellino, Edward Gipstein, William A. Hewett, Duane E. Johnson, Wayne M. Moreau
  • Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists
    Patent number: 3985915
    Abstract: Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10.5 to 12% nitrogen.
    Type: Grant
    Filed: December 20, 1974
    Date of Patent: October 12, 1976
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III
  • Thermally stable positive polycarbonate electron beam resists
    Patent number: 3961099
    Abstract: Electron beam positive resists which are sensitive to electron beam radiation and simultaneously thermally stable are prepared using polycarbonates.
    Type: Grant
    Filed: September 26, 1974
    Date of Patent: June 1, 1976
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III
  • High sensitivity positive resist layers and mask formation process
    Patent number: 3934057
    Abstract: A high sensitivity resist layer structure for high energy radiation exposure is formed by coating plural layers of radiation degradable polymers on a substrate which layers are successively slower dissolving in the resist developer. Upon exposure and solvent development, a resist edge profile is obtained which is particularly useful for metal lift-off.
    Type: Grant
    Filed: December 19, 1973
    Date of Patent: January 20, 1976
    Assignee: International Business Machines Corporation
    Inventors: Wayne M. Moreau, Chiu H. Ting
  • Electron beam positive resists containing acetate polymers
    Patent number: 3931435
    Abstract: Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.
    Type: Grant
    Filed: December 20, 1974
    Date of Patent: January 6, 1976
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III