Patents by Inventor Wei-Cheng Tian

Wei-Cheng Tian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10978461
    Abstract: A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: April 13, 2021
    Assignees: Taiwan Semiconductor Manufacturing Company Limited, National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
  • Patent number: 10868117
    Abstract: Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: December 15, 2020
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Po-Hao Tseng
  • Publication number: 20200161420
    Abstract: Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
    Type: Application
    Filed: December 16, 2019
    Publication date: May 21, 2020
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Po-Hao Tseng
  • Publication number: 20200051988
    Abstract: A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
  • Patent number: 10510837
    Abstract: Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: December 17, 2019
    Assignees: Taiwan Semiconductor Manufacturing Company Limited, National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Po-Hao Tseng
  • Patent number: 10504907
    Abstract: A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: December 10, 2019
    Assignees: Taiwan Semiconductor Manufacturing Company Limited, National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
  • Publication number: 20180219019
    Abstract: A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
    Type: Application
    Filed: March 29, 2018
    Publication date: August 2, 2018
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
  • Patent number: 9953989
    Abstract: A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: April 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
  • Patent number: 9812395
    Abstract: A method of forming low-k interconnect structure is disclosed, which comprises: providing at least one protruding structure on a substrate traversing between a first connection region to a second connection region defined thereon; performing anodic oxidation on the substrate having the protruding structure; forming one or more nanowire interconnect in the protruding structure traversing between the first connection region and the second connection region; the nanowire interconnect being surrounded by a dielectric layer formed during the anodic oxidation.
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: November 7, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
  • Publication number: 20170092720
    Abstract: Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
    Type: Application
    Filed: December 9, 2016
    Publication date: March 30, 2017
    Inventors: JENN-GWO HWU, WEI-CHENG TIAN, PO-HAO TSENG
  • Patent number: 9528194
    Abstract: Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: December 27, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Po-Hao Tseng
  • Patent number: 9506847
    Abstract: Embodiments of the present techniques provide systems and methods for isolating particular classes of biological molecules, for example, proteins or nucleic acids, from mixtures of biological components. The methods use solutions that react with the biological molecules to enhance their adsorption by substrates, allowing contaminants to be washed away from the targeted molecules. Embodiments include automated systems that can be used to implement the technique with no or minimal intervention. Other embodiments include separation column technologies that may be used in the techniques.
    Type: Grant
    Filed: May 22, 2014
    Date of Patent: November 29, 2016
    Assignee: GENERAL ELECTRIC COMPANY
    Inventors: Robert Scott Duthie, Wei-Cheng Tian, Tarun Khurana
  • Publication number: 20160099172
    Abstract: A method of forming low-k interconnect structure is disclosed, which comprises: providing at least one protruding structure on a substrate traversing between a first connection region to a second connection region defined thereon; performing anodic oxidation on the substrate having the protruding structure; forming one or more nanowire interconnect in the protruding structure traversing between the first connection region and the second connection region; the nanowire interconnect being surrounded by a dielectric layer formed during the anodic oxidation.
    Type: Application
    Filed: October 7, 2014
    Publication date: April 7, 2016
    Inventors: JENN-GWO HWU, WEI-CHENG TIAN, SAMUEL C. PAN, CHAO-HSIUNG WANG, CHI-WEN LIU
  • Publication number: 20150311426
    Abstract: A method of manufacturing a tactile transducer includes providing a substrate; performing a surface treatment on the substrate by using an electrolysis system; depositing a buffer layer on the substrate; forming a layer of a piezoactive thin film on the substrate; baking the piezoactive thin film; annealing the piezoactive thin film; performing a poling process on the piezoactive thin film; and depositing a top electrode on the piezoactive thin film.
    Type: Application
    Filed: April 24, 2014
    Publication date: October 29, 2015
    Applicant: National Taiwan University
    Inventors: Hong-Jie TSENG, Wei-Cheng TIAN, Wen-Jong WU
  • Publication number: 20150279846
    Abstract: A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
    Type: Application
    Filed: October 30, 2014
    Publication date: October 1, 2015
    Inventors: JENN-GWO HWU, WEI-CHENG TIAN, SAMUEL C. PAN, CHAO-HSIUNG WANG, CHI-WEN LIU
  • Publication number: 20150275383
    Abstract: Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
    Type: Application
    Filed: June 26, 2014
    Publication date: October 1, 2015
    Inventors: JENN-GWO HWU, WEI-CHENG TIAN, PO-HAO TSENG
  • Publication number: 20150229236
    Abstract: The present invention provides a zero-bias capacitive micromachined ultrasonic transducer element, comprising: a substrate having a lower electrode formed therein; a membrane structure that structurally supports an upper electrode over the lower electrode, wherein the upper electrode has at least one protruding part thereunder; a cavity between the substrate and the membrane structure; and a polymeric material coated on an inner surface of the cavity. The fabrication method of the zero-bias capacitive micromachined ultrasonic transducer element is also provided.
    Type: Application
    Filed: July 21, 2014
    Publication date: August 13, 2015
    Inventors: Wei-Cheng Tian, Yu-Shan Tien, Fang-Yu Lin, Pai-Chi Li
  • Publication number: 20140255272
    Abstract: Embodiments of the present techniques provide systems and methods for isolating particular classes of biological molecules, for example, proteins or nucleic acids, from mixtures of biological components. The methods use solutions that react with the biological molecules to enhance their adsorption by substrates, allowing contaminants to be washed away from the targeted molecules. Embodiments include automated systems that can be used to implement the technique with no or minimal intervention. Other embodiments include separation column technologies that may be used in the techniques.
    Type: Application
    Filed: May 22, 2014
    Publication date: September 11, 2014
    Applicant: General Electric Company
    Inventors: Robert Scott Duthie, Wei-Cheng Tian, Tarun Khurana
  • Patent number: 8753868
    Abstract: Embodiments of the present techniques provide systems and methods for isolating particular classes of biological molecules, for example, proteins or nucleic acids, from mixtures of biological components. The methods use solutions that react with the biological molecules to enhance their adsorption by substrates, allowing contaminants to be washed away from the targeted molecules. Embodiments include automated systems that can be used to implement the technique with no or minimal intervention. Other embodiments include separation column technologies that may be used in the techniques.
    Type: Grant
    Filed: August 4, 2008
    Date of Patent: June 17, 2014
    Assignee: General Electric Company
    Inventors: Robert Scott Duthie, Wei-Cheng Tian, Tarun Khurana
  • Patent number: 8377277
    Abstract: Electrophoresis systems and methods comprise an electrophoresis device, wherein the electrophoresis comprises a loading channel, a separation channel, and an injection channel. The loading channel is in fluid communication with a first and second sample port. The separation channel is connected to the loading channel to form a first intersection, and an injection channel connected to the separation channel to form a second intersection and in fluid communication with a first reservoir, and wherein the separation channel is in fluid communication with a second reservoir. The electrophoresis system further comprises two electrodes coupled to the first sample port and the first reservoir, and the first sample port and the second reservoir, respectively, that are adapted to move the sample into the loading channel towards the first reservoir and form a sample plug in the separation channel, and to further move the sample plug into the separation channel towards the second reservoir.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: February 19, 2013
    Assignee: General Electric Company
    Inventors: Jun Xie, Wei-Cheng Tian, Shashi Thutupalli, Li Zhu, Anthony John Murray, Erin Jean Finehout