Abstract: The present disclosure relates to a fracturing propping agent and a preparation method thereof. The fracturing propping agent comprises the following raw materials: dry sludge, quartz sand, coal ash, bauxite and clay.

Abstract: A variable aperture module includes a blade assembly including movable blades, a positioning element including positioning structures and a driving part including a rotation element. The movable blades are disposed around an optical axis to form a light passable hole with adjustable size for different hole size states and each have an inner surface to define the contour of the light passable hole in each hole size state. The positioning structures correspond to the movable blades. The rotation element is rotatable with respect to the positioning element and is configured to rotate the movable blades to adjust a size of the light passable hole. There are matte structures disposed on each inner surface. Each matte structure is single structure extending towards the optical axis, such that at least part of the contour of the light passable hole has an undulating shape at least in several hole size states.

Abstract: Provided are compounds comprising ligands LA that are ligands of Pt and Ir complexes for OLED applications. Also provided are formulations comprising these compounds comprising ligands LA that are ligands of Pt and Ir complexes for OLED applications. Further provided are OLEDs and related consumer products that utilize these compounds comprising ligands LA that are ligands of Pt and Ir complexes for OLED applications.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A vibration suppression method for a servo motor and a load multistage drive system is provided. For a number N of fixed vibration frequencies and one vibration frequency varying with a load position existing in a multistage drive mechanism, a number of N+1 vibration suppression filters are adopted, and each filter is configured to eliminate a corresponding vibration frequency. Fixed vibration frequencies and a vibration frequency varying with a load position in a multistage drive system are measured by using an offline method, and the varied vibration frequencies are made into a two-dimensional table related to the load positions. The fixed vibration frequencies are eliminated by using fixed-frequency parameter vibration suppression filters; and the varied vibration frequencies are eliminated by using a variable-frequency parameter vibration suppression filter, and the vibration frequencies are obtained in real time according to the load positions and the two-dimensional table.

Abstract: Aspects of the invention include systems and methods configured to efficiently evaluate the efforts of a code migration (e.g., porting task) between different platforms. A non-limiting example computer-implemented method includes receiving a function of a source platform. The function can include a plurality of fields. An initial vector is constructed for each of the plurality of fields. The initial vector encodes a value of the respective field according to an encoding rule. The initial vectors are merged into a single final vector and the final vector is classified into one of a plurality of system function families of the source platform. A vector of a target platform at a minimum distance to the final vector is identified and an assessment is provided that includes a difficulty in porting a project comprising the function between the source platform and the target platform based at least in part on the minimum distance.

Abstract: An image capture method for flash photography includes: capturing at least one first image while a strobe device is operating under a first strobe intensity setting for emitting main flash, capturing at least one second image while the strobe device is operating under a second strobe intensity setting different from the first strobe intensity setting, and generating an output image by blending the at least one first image and the at least one second image.

Abstract: A silicon carbide semiconductor power transistor includes a silicon carbide substrate, a first drift layer, a second drift layer on the substrate with V-grooves, buried doped regions in the first drift layer below the V-grooves, gates in the V-grooves, a gate insulation layer, a delta doping layer, a well region, source regions, well pick-up regions, conductive trenches, and doping portions. Each of the buried doped regions is a predetermined distance from a bottom of each of the V-grooves. The delta doping layer is disposed in the second drift layer, and the V-grooves are across the delta doping layer. The conductive trenches are disposed in the second drift layer, and each of the conductive trenches passes through the well pick-up regions and contacts with the well region. The doping portions are respectively on sidewalls of the conductive trenches in the well region.

Abstract: A photographing module includes a lens assembly, a reflection element, an image sensor, and lens element, reflection element and image sensor driving modules. An axial voice coil motor of the lens element driving module moves the lens assembly along a lens optical axis. A rotating connection part and a curved recess structure are disposed between a holder and a carrier movable relative to the holder. A lateral voice coil motor of the reflection element driving module drives the carrier carrying the reflection element to rotate around an axis passing through the rotating connection part. A plurality of rollable elements are located between and in contact with the fixed member and the movable plate. A lateral voice coil motor of the image sensor driving module drives the movable plate carrying the image sensor to move based on a dynamic axis orthogonal to the lens optical axis.

Abstract: A display device and a backlight control method of the display device are provided. When a duration of an image occlusion period is shorter than a preset duration, a backlight driving circuit is controlled to respectively provide a first pulse current and a second pulse current in a first light emitting period and a second light emitting period in each frame period, so as to drive a backlight unit to provide a first backlight and a second backlight. Here, the first pulse current is greater than the second pulse current.

Abstract: An imaging lens assembly includes a lens element and a light blocking element. The lens element is configured to define an optical axis, and the optical axis passes through the lens element. The light blocking element includes a light through hole and a plurality of light diminishing structures. The optical axis passes through the light through hole, the light through hole is formed by connecting a plurality of sidelines to define a polygonal contour. The light diminishing structures are regularly disposed along the polygonal contour, wherein the light diminishing structures are configured to undulate at least one portion of each of the sidelines, so that the at least one portion of each of the sidelines is a non-straight line.

Abstract: A method of manufacturing a silicon carbide semiconductor power device is provided. In the method, the power device in high voltage (HV) region and CMOS device in the low voltage (LV) region are formed together, so the cost and time can be saved efficiently. First, a first drift layer is formed on a substrate, and then a shielding region is formed in the first drift layer. The shielding region includes a continuous region in the LV region. Then, a second drift layer is formed on the first drift layer. A pick-up region is formed in the second drift layer, wherein the pick-up region connects to the continuous region of the shielding region, and then NMOS and PMOS in the LV region and the power device in HV region are formed simultaneously. NMOS and PMOS are surrounded by the pick-up region and the continuous region, thereby minimizing body effect.

Abstract: An image sensor includes an image sensor die, a light transmitting element, at least one anti-reflection coating and at least one anti-reflection structure. The image sensor die includes a photoelectric conversion layer and a micro lens layer. The micro lens layer is disposed above the photoelectric conversion layer for converging the light onto the photoelectric conversion layer. The light transmitting element is disposed above the micro lens layer, and a gap is formed between the light transmitting element and the micro lens layer, the light passes through the light transmitting element and then travels into the image sensor. The anti-reflection coating is at least disposed on an upper surface of the light transmitting element. The anti-reflection structure is disposed on at least one of a lower surface of the light transmitting element and the micro lens layer.

Abstract: A smart antenna switching method is disclosed. Multiple wireless signal parameters of a wireless network environment are collected. Under a current operating phase, when a holding period of a to-be-switched antenna is 0, the qualities of wireless signals between an initial antenna and the to-be-switched antenna are compared according to the wireless signal parameters. When a comparing period of the to-be-switched antenna is 0, it is determined whether an antenna switching operation is performed. If the antenna switching operation is not performed, the next operating phase is served as the current operating phase. If the antenna switching operation is performed, a signal receiving-and-sending operating is switched from the to-be-switched antenna to the outdoor antenna or from the outdoor antenna to the to-be-switched antenna, and the previous operating phase is served as the current operating phase.

Abstract: Some embodiments provide a method for handling failure at one of several peer centralized components of a logical router. At a first one of the peer centralized components of the logical router, the method detects that a second one of the peer centralized components has failed. In response to the detection, the method automatically identifies a network layer address of the failed second peer. The method assumes responsibility for data traffic to the failed peer by broadcasting a message on a logical switch that connects all of the peer centralized components and a distributed component of the logical router. The message instructs recipients to associate the identified network layer address with a data link layer address of the first peer centralized component.

Abstract: A short-circuit protection circuitry is adapted for a power transistor. The short-circuit protection circuitry includes a first diode, a first resistor, a voltage dividing circuit, a gate voltage generator, a pull-down circuit, and a control signal generator. The first diode is coupled to a drain of the power transistor. The first resistor is coupled between the first diode and the power transistor. The voltage dividing circuit is coupled between a gate and a source of the power transistor to generate a dividing voltage. The gate voltage generator provides a gate voltage to the gate of the power transistor according to a first driving signal and a second driving signal. The pull-down circuit pulls down the gate voltage according to a control signal. The control signal generator generates the control signal according to the first driving signal, a voltage on the anode of the first diode and the dividing voltage.

Abstract: A linear actuator assembling method includes a semi-finished product assembling step and a threaded shaft assembling step. The semi-finished product assembling step is to form a semi-finished product, and the semi-finished product includes a case, a main gear, and a main gear bearing. The main gear and the main gear bearing are surrounded and restricted by the case, and the main gear bearing is sleeved on the main gear. In the threaded shaft assembling step, a threaded shaft is reversely assembled, and one end of the threaded shaft is inserted into the main gear to allow the end of the threaded shaft to be restricted by the main gear.

Abstract: The present disclosure is directed to an in situ closed-loop radio frequency (RF) power management on RF processes such as a plasma etch process, a plasma chemical vapor deposition process, a plasma physical vapor deposition process, a plasma clean process, or the like. An RF power measurement device according to one or more embodiments of the present disclosure assists the in situ closed-loop RF power management on RF processes. In some embodiments, the RF power measurement device includes a coil-shaped current sensor that is wound around the path between an RF generator and a chamber. The coil-shaped current sensor senses the current flowing through this path so that the power of the RF generator may be calibrated without having to separate the RF generator for separate analysis and calibration. The RF power measurement device allows management of RF power in an in situ closed-loop manner.

Abstract: Methods, systems, and apparatus including computer programs encoded on a computer storage medium, for retrieving image search results using embedding neural network models. In one aspect, an image search query is received. A respective pair numeric embedding for each of a plurality of image-landing page pairs is determined. Each pair numeric embedding is a numeric representation in an embedding space. An image search query embedding neural network processes features of the image search query and generates a query numeric embedding. The query numeric embedding is a numeric representation of the image search query in the same embedding space. A subset of the image-landing page pairs having pair numeric embeddings that are closest to the query numeric embedding of the image search query in the embedding space are identified as first candidate image search results.

Abstract: A semiconductor power device includes a substrate, a drift layer disposed on the substrate, buried doped regions, gates, a gate insulation layer, well regions, source regions, and well contact regions. The buried doped regions are in the drift layer and parallel to each other, and each of the buried doped regions is a predetermined distance from an upper surface of the drift layer. The gates are on the drift layer and directly above the buried doped regions. The gate insulation layer is between the drift layer and the gates. The well regions are in the drift layer between the gates and separated from the buried doped regions, wherein the well regions and the buried doped regions are electrically connected. The source regions are within the well regions between the gates, and each of the well contact regions passes through the source region and contacts with the well.