Abstract: A semiconductor structure includes a substrate, an epitaxial layer disposed on the substrate, a conductive feature disposed in the epitaxial layer having a protruding portion that is higher than the epitaxial layer, and a diffusion barrier layer disposed on sidewalls of the conductive feature.

Abstract: A circuit includes a first filter, a plurality of binary-weighted capacitors, and a current source device. The circuit also includes a first plurality of switches. Each of the first plurality of switches is connected to a separate capacitor of the plurality of binary-weighted capacitors. The first plurality of switches are connected together, and the first plurality of switches are not connected to the first filter. A second plurality of switches is also included, and each of the second plurality of switches is connected to a separate capacitor of the plurality of binary-weighted capacitors and to the first filter and to a control input of the current source device. The first plurality of switches are not connected to the control input.

Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.

Abstract: A movable solar power apparatus may comprise at least a solar panel set electrically connected to a maximum power point tracking system (MPPT). A lithium battery set is electrically connected to a battery management system (BMS) which is adapted to monitor and protect the lithium battery set, and the BMS is electrically connected to the MPPT to enable power generated by the solar panel set to directly charge the lithium battery set. A low potential wake-up circuit has a double-contact relay and a single-contact relay, and the double-contact relay comprises a main contact, a first contact, and a second contact. The main contact is switchably electrically connected to the first contact or the second contact, and the main contact is electrically connected to the BMS while the first contact is electrically connected to the master control circuit, and the MPPT is electrically connected to the BMS under normal condition.

Abstract: The present invention relates to an assistive glove for daily activities of stroke patient which comprises a main body, a first pulling member, a second pulling member, and plural circular strings. The main body comprises a thumb sleeve, at least one finger sleeve a palm portion connected to the thumb sleeve and the at least one finger sleeve by one side and a wrist portion connected to another side of the palm portion. The first pulling member and the second pulling member are disposed on the palm portion and having a first hook and at least one second hook corresponding to the thumb sleeve and the at least one finger sleeve. The plural circular strings are hung on the first hook and the at least one second hook and fixed to the thumb sleeve and the at least one finger sleeve respectively.

Abstract: In described examples, a first clock generator generates an output clock signal in response to an input reference signal and in response to a feedback signal that is generated in response to the output clock signal. A code generator generates a code in response to the input reference signal. A loss detector generates an indication of a loss of the input reference signal in response to the feedback signal and at least two codes generated by the code generator.

Abstract: A clamping fixture includes a body, a connector, a first clasp, at least one first elastic member and a lock. The connector is movable relative to the body along a first direction. The first clasp includes a first fastener and is disposed at one end of the connector. The at least one first elastic member is configured to apply force to the body and the connector along the first direction. The lock includes a second fastener. The first clasp and the lock are coupled through the first fastener and the second fastener.

Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.

Abstract: The present disclosure discloses a transformer. The transformer includes a magnetic core, at least one winding assembly and at least one conductive plate assembly. The magnetic core includes a magnetic core pillar. The at least one winding assembly is disposed around the magnetic core pillar to receive an input power. The at least one conductive plate assembly is disposed around the magnetic core pillar and electromagnetic coupled with the winding assembly via the magnetic core. The conductive plate assembly includes at least two conductive plates. Each of the conductive plates includes a main body and a pin extending outwardly from the corresponding main body. The extension directions of the pins of the at least two conductive plates extending outwardly from the corresponding main bodies are different from each other. The pins are connected to different circuit boards. Each of the circuit boards includes at least one rectifier.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A touch apparatus including a control button and a touch panel is provided. The control button includes an insulating main body and a conductive member disposed on the insulating main body. The touch panel is disposed on a side of the control button, and the touch panel includes a cover plate and a touch-sensing element. The conductive member is located between the insulating main body and the cover plate. The cover plate is located between the control button and the touch-sensing element. The touch-sensing element is electrically insulated from the conductive member. The touch-sensing element includes a plurality of electrodes disposed corresponding to the control button. The conductive member moves along with the movement of the insulating main body, and the movement of the conductive member causes a capacitance change of at least one of the plurality of electrodes.

Abstract: The present disclosure provides a light source assembly, a backlight module, and a display device. The light source assembly includes: at least one semiconductor laser, at least one beam expander, and a package; the at least one semiconductor laser and the at least one beam expander are in one-to-one correspondence and are all encapsulated in the package; each of the at least one beam expander is disposed on a side of a light emitting surface of a corresponding one of the at least one semiconductor laser; light emitted by each of the at least one semiconductor laser is expanded by a corresponding one of the at least one beam expander and then emitted from the package.

Abstract: A flat drop cable has notches or other structures for enhancing the stripability of the jacket from the a core of the flat drop cable. The notches can have an angled configuration with surfaces that converge as the notch extends into the jacket. Inner edges of the notches can be positioned along a tear path that intersects the core of the flat drop cable. For example, the notches can be offset from a minor axis of the flat drop cable a sufficient distance such that the notches are positioned outside a central boundary region that extends tangent to sides of the core and parallel to the minor axis of the flat drop cable.

Abstract: This application provides a display apparatus and a switch-off drive method therefor. The display apparatus includes: a display panel, including: at least one scanning line; at least one data line, crossed with the scanning line; at least one active switch, connected to the scanning line and the data line; a common electrode, disposed on the display panel and connected to the active switch, where the common electrode has a co-electrode voltage; and a control component, including one or more control switches, where a first end of the control switch is coupled to the common electrode, a second end of the control switch is coupled to a discharge module, and a control end of the control switch is coupled to a switching voltage, where a status of the control switch is adjusted by using a voltage difference between the switching voltage and the co-electrode voltage.

Abstract: A movable solar power apparatus may comprise at least a solar panel set electrically connected to a maximum power point tracking system (MPPT). A lithium battery set is electrically connected to a battery management system (BMS) which is adapted to monitor and protect the lithium battery set, and the BMS is electrically connected to the MPPT to enable power generated by the solar panel set to directly charge the lithium battery set. A low potential wake-up circuit has a double-contact relay and a single-contact relay, and the double-contact relay comprises a main contact, a first contact, and a second contact. The main contact is switchably electrically connected to the first contact or the second contact, and the main contact is electrically connected to the BMS while the first contact is electrically connected to the master control circuit, and the MPPT is electrically connected to the BMS under normal condition.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A main pump shaft seal water injection system of a nuclear power plant includes a jet pump, a high pressure cooler, a hydrocyclone, valves and a main connection pipeline outside of a main pump, and an auxiliary pump and an internal flow path inside the main pump. Inner and outer flow paths of the main pump are connected with a shaft seal water injection hole and a high temperature water drainage hole. The main connection pipeline is connected between an upper filling water pipeline and a shaft seal water injection hole. A bypass pipeline connected with the jet pump, the high pressure cooler and the hydrocyclone, the main connection pipeline is provided with a normally open main pipeline isolating valve. The bypass pipeline allows low temperature upper filling water in the RCV system to enter the shaft seal water injection hole of the main flange directly.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.