Abstract: A rope light mainly includes a #-sectioned elongate core enclosed in an outer tube, and a plurality of bulb strings parallelly set in two adjacent channels defined on the elongate core. The elongate core includes two or three spaced conductors pre-embedded therein when the core is formed, and the two selected channels are provided at bottom surfaces with a plurality of radially extended and staggered implant holes for receiving alternate bulbs and holding terminals connecting adjacent bulbs in the bulb strings, enabling the rope light to give intensified illuminance. The #-sectioned core has good structural strength and the radially positioned bulbs and holding terminals provide supporting forces to protect the rope light from easily damaged bulbs or short circuit. The holding terminals may be reflective members or covered with reflective sleeves to reflect light beams emitted by the bulbs and thereby increase the illuminance of the rope light.

Abstract: A closed-loop controlled apparatus and method for preventing contamination to a low pressure chemical vapor deposition chamber (LPCVD) are provided. The apparatus includes an exhaust vent equipped with a butterfly valve for controlling a flow rate through the vent. The exhaust vent is connected to a vacuum outlet and a vacuum pump on a process chamber in parallel with and bypassing a gate valve such that the exhaust vent can be opened for the continuous pumping of the process chamber during wafer loading and unloading steps. The exhaust vent may be constructed by two end conduits that have a larger diameter which are connected by a middle conduit that has a smaller diameter such that during vacuum evacuation, the fluid flow rate in the small diameter conduit is at least four times that in the large conduit to effectively prevent the deposition and blockage of the small conduit by reaction by-products or contaminating particles.

Abstract: An apparatus and a method for preventing contamination to a low pressure chemical vapor deposition chamber (LPCVD) are provided. The apparatus includes an exhaust-vent device which is connected to a vent outlet and a vacuum pump on a process chamber in parallel with and bypassing a gate valve such that the exhaust-vent remains open during a continuous pumping of the process chamber for wafer loading and unloading. The exhaust-vent device is constructed by two end conduits that have a larger diameter connected by a middle conduit that has a smaller diameter such that during vacuum evacuation, the fluid flow rate in the smaller diameter conduit is at least four times that in the large conduit to effectively prevent the deposition in the small conduit of reaction by-products. The present invention apparatus may further be enhanced by mounting heating tapes on the vacuum conduits and heating the conduits to a temperature of between about 100.degree. C. and about 180.degree. C.

Abstract: A new method is provided to manufacture a T-shaped gate. A layer of insulation is deposited over a semiconductor surface (typically the surface of a substrate), a dual damascene structure containing a via opening and a conducting line trench is created in the layer of insulation. A layer of sacrificial oxide is grown and subsequently removed (preventing initial surface defects and providing protection during subsequent steps of etching). A layer of gate oxide is selectively grown on the bottom of the dual damascene opening. A layer of poly is deposited over the layer of insulation thereby including the dual damascene opening, the poly is planarized down to essentially the top of the dual damascene structure and the insulation is removed from above the surface of the substrate in the regions surrounding the dual damascene structure leaving the dual damascene structure in place.