Abstract: A secondary battery includes an electrode assembly including current collecting sections, an electrode terminal, and an adapter sheet connecting the current collecting sections to the electrode terminal. The electrode assembly includes active material layer(s), current collector(s) each including an insulating layer and first and second conductive layers sandwiching the insulating layer, and conductive structures each including first and second conductive members. A portion of the first conductive member extending beyond the second conductive member forms a current collecting section. The current collecting sections are laminated with each other, with one of the current collecting sections directly contacting the adapter sheet. Neighboring ones of the current collecting sections directly contact each other, without any second conductive member arranged therebetween.

Abstract: A transmission processing method includes: obtaining, by an access network node, first information; and performing, by the access network node according to the first information, transmission processing on service data. The first information is used for indicating a type and/or a characteristic of the service data. The service data is a data packet and/or a data frame.

Abstract: An electrode plate includes an active material layer, a current collector including an insulating layer and first and second conductive layers sandwiching the insulating layer, and a conductive structure. The conductive structure includes a first conductive member including a first section arranged along a side of the first conductive layer and a second section extending from the first section and beyond the current collector in a direction away from the active material layer, and a second conductive member including a first connecting section connected to the second conductive layer, a bent section connected to the first connecting section and bent towards the first conductive member relative to the first connecting section, and a second connecting section bent backward relative to the bent section to be sandwiched between the first section and the first conductive layer.

Abstract: A near eye display system is provided. The near eye display system includes: a frame; a first near eye display mounted on the frame and configured to form a first image directly projected on a first retina of a first eye of a user; a second near eye display mounted on the frame and configured to form a second image directly projected on a second retina of a second eye of the user; and a processing unit located at the frame and configured to generate a display control signal to drive the first near eye display and the second near eye display.

Abstract: Systems, apparatus and methods are provided for low temperature management of a storage system. An apparatus may include a temperature sensor to generate a temperature reading, a timer configured with a time interval, a backup battery, one or more non-volatile memory (NVM) devices and a storage controller. The storage controller may be configured to: maintain a standby mode for low temperature management until a host electronic system has been turned off, start the timer and check the temperature reading when the host electronic system is turned off, determine that the temperature reading is below a temperature threshold, set the time interval based on the temperature reading, receive an interrupt from the timer when the timer counts to the time Interval, and perform low-temperature management operations for data stored in the one or more NVM devices using power supplied by the backup battery.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: Methods, systems, and devices for wireless communications are described. A user equipment (UE) may receive an indication of an antenna port mapping from a network entity. The antenna port mapping may be between a tracking reference signal and a corresponding reference signal, the antenna port mapping indicating a mapping of a tracking reference signal port to a plurality of reference signal antenna ports associated with the corresponding reference signal. The UE may receive a tracking reference signal via the tracking reference signal port based on the antenna port mapping. The UE may perform a channel measurement procedure using the tracking reference signal based on the mapping.

Abstract: The invention discloses a synthesis method and device for rapidly producing lactide at high yield. The method comprises: adding a single component of lactic acid or two components of lactic acid and catalyst, passing the mixture through a mixer to enter an oligomer preparation system, increasing a residence time through bottom circulation, synthesizing oligomeric lactic acid, and passing a gas-phase component through a rectification system. With the adoption of the device, the lactide is capable of being efficiently synthesized, crude lactide with a yield of 94% to 98% is capable of being obtained.

Abstract: The present disclosure discloses an optical measurement device and method for a plasma magnetic field with adjustable sensitivity. The method comprises the following steps: constructing an optical rotation measurement system based on a pulsed laser beam for measuring an optical rotation image and a shadow image; processing the optical rotation image and the shadow image, and obtaining a distribution of proportional coefficients based on alight intensity distribution; obtaining a distribution of rotation angles based on a mapping relationship between the proportional coefficients and the rotation angles; constructing an interference measurement system based on the pulsed laser beam, and measuring a phase shift of an interference image; calculating a distribution of electron areal densities based on the phase shift in the interference image; obtaining a two-dimensional distribution of an average magnetic field based on the rotation angles and the electron areal densities.

Abstract: A system and method for preparing epoxy chloropropane is provided in that by coupling three stages of high gravity reactors, the product epoxy chloropropane and water vapor are distilled from a reaction system in form of an azeotrope by adopting a water vapor steam stripping method. Further, by combining the azeotrope with the multiples stages of high gravity reactors, the gas phase mass transfer and the liquid phase mass transfer of the azeotrope are improved aiming at the features of the azeotrope in the reaction system, thus making the overall conversion rate higher. In addition, by combining steam stripping and high gravity, dichloropropanol and alkali solution are rapidly mixed for mass transfer, and the product epoxy chloropropane is rapidly distilled from the reaction system in the form of the azeotrope, such that the reaction proceeds continuously towards the direction of producing epoxy chloropropane, thus significantly improving the conversion rate.

Abstract: A semiconductor structure includes: a logic device including a first power line and a second power line located on a same wiring layer, extending along a first direction and arranged in parallel along a second direction, the first direction and the second direction intersecting with each other and being parallel to a plane where the wiring layer is located; and a switch driving device, the switch driving device and the logic device being arranged in parallel along the first direction, the switch driving device including a first input line and a first output line located on the same wiring layer as the first power line, extending along the first direction and arranged in parallel along the second direction, the first output line being connected with the first power line or the second power line.

Abstract: A thin film transistor and a manufacturing method therefor, an array substrate, and a display panel and device. The thin film transistor includes: a gate (11) and an active layer (12) that are located on one side of a base substrate (10); a gate insulation layer (13) located between the gate (11) and the active layer (12); and a source (14) and a drain (15) that are spaced apart and both are in contact with the active layer (12), wherein a first ratio of the thickness of the gate insulation layer (13) and the thickness of the active layer (12) ranges from 3 to 4.

Abstract: A memory device includes a multi-layer stack, a channel layer, a memory material layer and at least three conductive pillars. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The channel layer and memory material layer penetrate through the plurality of conductive layers and the plurality of dielectric layers. The at least three conductive pillars are surrounded by the channel layer and the memory material layer, wherein the at least three conductive pillars are electrically connected to conductive layers respectively. The at least three conductive pillars includes a first, a second and a third conductive pillars disposed between the first conductive pillar and the second conductive pillar. A third width of the third conductive pillar is smaller than a first width of the first conductive pillar and a second width of the second conductive pillar.

Abstract: A display device and method of manufacturing thereof is provided. The display device includes: a substrate; a plurality of control transistors disposed in the substrate; a multi-layer interconnect (MLI) structure on the substrate; and a luminous device layer disposed on the MLI structure. The luminous device layer includes a plurality of sub-pixels corresponding to the plurality of control transistors, respectively. The MLI structure includes a plurality of routing features and at least one light blocking feature, and the plurality of routing features electrically connect each of the plurality of control transistors to the corresponding sub-pixel, and the at least one light blocking feature is operable to block stray light generated by the luminous device layer.

Abstract: The present disclosure provides an energy storage system. For example, an energy storage system comprises a printed circuit board assembly configured to connect to a chassis of the energy storage system and a battery cell comprising a connecting/disconnecting device configured to engage a corresponding connecting/disconnecting device on the printed circuit board assembly for providing at least one of electrical interconnection, routing, voltage sensing, or temperature sensing.

Abstract: Methods, systems, and devices for wireless communications are described. In some wireless communications systems, a user equipment (UE) and a network entity may utilize multi-port mobility reference signals to assist with spatial based mobility procedures. The UE may receive a reference signal that is associated with multiple antenna ports. The UE may measure a multi-dimensional channel response based on the reference signal. The multi-dimensional channel response may be associated with measured channel metrics corresponding to the multiple antenna ports. The UE may transmit a report that includes a channel measurement vector based on the multi-dimensional channel response. The channel measurement vector may indicate multiple measured channel metrics for one or more dimensions of the multi-dimensional channel response. The network entity may transmit a message that indicates one or more metrics associated with mobility management for the UE based on the report that indicates the channel measurement vector.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a wireless communication device may identify a first set of bits associated with a first set of modulation layers. The wireless communication device may interleave a second set of bits associated with a second set of modulation layers to obtain an interleaved second set of bits. The wireless communication device may generate a combined set of bits based at least in part on combining the second set of bits and at least a portion of the first set of bits. The wireless communication device may perform a transmission based at least in part on the combined set of bits and the second set of bits. Numerous other aspects are described.

Abstract: A neutron capture therapy system is provided, including a neutron generating device and a beam shaping assembly. The neutron capture therapy system further includes a concrete wall forming a space for accommodating the neutron generating device and the beam shaping assembly and shielding radiations generated by the neutron generating device and the beam shaping assembly. A support module is disposed in the concrete wall, the support module is capable of supporting the beam shaping assembly and is used to adjust the position of the beam shaping assembly, and the support module includes concrete and a reinforcing portion at least partially disposed in the concrete. The neutron capture therapy system designs a locally adjustable support for the beam shaping assembly, so that the beam shaping assembly can meet the precision requirement, improve the beam quality, and meet an assembly tolerance of the target.

Abstract: A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermediate electrode. The variable-capacitance capacitor includes a lower capacitor plate comprising the intermediate electrode, an upper capacitor plate comprising a control gate electrode, and a variable-capacitance node dielectric and including an electrical-field-programmable metal oxide material. The electrical-field-programmable metal oxide material provides a variable effective dielectric constant, and a data bit may be stored as a dielectric state of the variable-capacitance node dielectric in the memory device. The variable-capacitance node dielectric provides reversible electrical field-dependent resistivity modulation, or reversible electrical field-dependent movement of metal atoms therein.

Abstract: End-to-end neural image compression using deep reinforcement learning (DRL) is performed by at least one processor and includes encoding an input, generating encoded representations of the input, generating a set of quantization keys using a first neural network, based on a set of previous quantization states, wherein each quantization key in the set of quantization keys and each previous quantization state in the set of previous quantization states correspond to the encoded representations of the input, generating a set of dequantized numbers representing dequantized representations of the encoded representations of the input, based on the set of quantization keys, using a second neural network, and generating a reconstructed output, based on the set of dequantized numbers.