Abstract: An image sensor is provided. The image sensor includes a red (R) pixel, a green (G) pixel, a blue (B) pixel and an infrared (IR) pixel, and R, G and B filters respectively disposed at the R, G and B pixels. The image sensor also includes an IR pass filter disposed at the IR pixel and an IR filter stacked with the R, G and B filters, wherein the IR filter cuts off at least IR light with a specific wavelength. Furthermore, a method of forming an image sensor is also provided.

Abstract: A stacked filter for an image sensor including an infrared (IR) pixel is provided. The stacked filter includes a first filter layer disposed at the IR pixel. The first filter layer allows light with wavelengths of a first band to be transmitted through. The stacked filter further includes a second filter layer stacked with the first filter layer. The second filter layer allows light with wavelengths of a second band to be transmitted through. The first band partially overlaps the second band at wavelengths of a third band. The third band is narrower than the first band and the second band. The stacked filter allows light with the wavelengths of the third band to be transmitted through. Furthermore, an image sensor containing a stacked filter is also provided.

Abstract: An image sensor includes a sensing layer for sensing a light beam and a number of pixel groups. Each of the pixel groups includes a yellow filter unit allowing a green light component and a red light component of the light beam to pass through, a green filter unit allowing the green light component of the light beam to pass through, and a blue filter unit allowing a blue light component of the light beam to pass through.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, and a carrier. The image sensor includes a sensing area and a non-sensing area around the sensing area. The light-guiding structure is disposed on the image sensor. The light-guiding structure includes a central guiding portion, a reflection layer, and first guiding portions. The central guiding portion is located over the sensing area. The reflection layer is disposed on the image sensor and includes channels located over the non-sensing area. The first guiding portions are located in the channels, and connected to the central guiding portion and a side surface of the light-guiding structure. The carrier is disposed on the light-guiding structure, and has wells located over the sensing area. Each of the wells is configured to receive a specimen.

Abstract: A spectrum-inspection device includes a multi-band pass filter, a filter array, and a sensing layer. The multi-band pass filter allows a first waveband, a second waveband, and a third waveband of a light beam to pass through. The light beam passes through the multi-band pass filter forms a multi-band beam. The filter array is disposed under the multi-band pass filter. The filter array includes a first filter allowing wavelengths of the multi-band beam longer than a first wavelength to pass through, a second filter allowing wavelengths of the multi-band beam longer than a second wavelength to pass through, and a third filter allowing wavelengths of the multi-band beam longer than a third wavelength to pass through. The second waveband is between the first wavelength and the second wavelength, and the third waveband is between the second wavelength and the third wavelength.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, a carrier, and a light source. The light-guiding structure is disposed on the image sensor, and includes a light-guiding layer and a top layer. The light-guiding layer is disposed on the image sensor. The top layer is disposed on the light-guiding layer. The carrier is disposed on the light-guiding structure. The carrier has a number of wells arranged in an array located over the guiding portions. Each of the wells is configured to receive a specimen.

Abstract: An imaging sensor is provided. The imaging sensor includes: a filter array used for extracting a specified color component of an incident light; and photoelectric elements for receiving the incident light via the filter array. The filter array includes: a green filter for extracting a green component; a red filter for extracting a red component; a blue filter for extracting a blue component; and a first infrared filter for extracting a first infrared component for the green component. The first infrared filter is implemented by the green filter and an infrared high-pass filter of a specific wavelength.

Abstract: An image-sensing apparatus is provided. The image-sensing apparatus includes: an optical filter array including a two-band passing filter and an infrared filter; an RGB pixel array placed below the two-band passing filter; and a TOF pixel array adjacent to the RGB pixel array and placed below the two-band passing filter and the infrared filter, wherein a combination of the two-band passing filter and the infrared passing filter permits only the incident light in the infrared region to pass to the ToF pixel array.

Abstract: An image sensor is provided. The image sensor includes a red (R) pixel, a green (G) pixel, a blue (B) pixel and an infrared (IR) pixel, and R, G and B filters respectively disposed at the R, G and B pixels. The image sensor also includes an IR pass filter disposed at the IR pixel and an IR filter stacked with the R, G and B filters, wherein the IR filter cuts off at least IR light with a specific wavelength. Furthermore, a method of forming an image sensor is also provided.

Abstract: A stacked filter for an image sensor including an infrared (IR) pixel is provided. The stacked filter includes a first filter layer disposed at the IR pixel. The first filter layer allows light with wavelengths of a first band to be transmitted through. The stacked filter further includes a second filter layer stacked with the first filter layer. The second filter layer allows light with wavelengths of a second band to be transmitted through. The first band partially overlaps the second band at wavelengths of a third band. The third band is narrower than the first band and the second band. The stacked filter allows light with the wavelengths of the third band to be transmitted through. Furthermore, an image sensor containing a stacked filter is also provided.

Abstract: A back surface illuminated image sensor is provided. The back surface illuminated image sensor includes: a first passivation layer disposed on the photodiode array; an oxide grid disposed on the first passivation layer and forming a plurality of holes exposing the first passivation layer; a color filter array including a plurality of color filters filled into the holes, wherein the oxide grid has a refractive index smaller than that of plurality of color filters; and a metal grid aligned to the oxide grid, wherein the metal grid has an extinction coefficient greater than zero.

Abstract: An image sensor for light field devices includes a plurality of sub-microlenses, a space layer, and a plurality of main microlenses. The space layer is disposed on the sub-microlenses, and the main microlenses are disposed on the space layer. The diameter of each of the main microlenses exceeds that of each of the sub-microlenses.

Abstract: An image-sensing apparatus is provided. The image-sensing apparatus includes: an optical filter array including a two-band passing filter and an infrared filter; an RGB pixel array placed below the two-band passing filter; and a TOF pixel array adjacent to the RGB pixel array and placed below the two-band passing filter and the infrared filter, wherein a combination of the two-band passing filter and the infrared passing filter permits only the incident light in the infrared region to pass to the ToF pixel array.

Abstract: Aspheric lens structures with dual aspheric surfaces and fabrication methods thereof are disclosed. An aspheric lens structure includes a first lens component with an aspheric top surface disposed on a second lens component, wherein the interface between the first lens component and the second lens component is spherical. The second lens component includes an aspheric back surface, wherein the radius of curvature of the aspheric top surface of the first lens component is different than the radius of curvature of the aspheric back surface of the second lens component. The second lens component may also include a planar back surface with a third lens component disposed on the planar back surface of the second component. The third lens component includes an aspheric back surface, wherein the radius of curvature of the aspheric top surface of the first lens component is different than the radius of curvature of the aspheric back surface of the third lens component.

Abstract: A light-emitting diode (LED) device is disclosed. The LED device includes a semiconductor substrate with a light-emitting diode chip disposed thereon. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the light-emitting diode chip. In one embodiment, the lens module comprises a glass substrate having a first cavity formed at a first surface thereof, a fluorescent layer formed over a portion of a first surface exposed by the first cavity, facing the light-emitting diode chip, and a molded lens formed over a second surface of the glass carrier opposing to the first surface.

Abstract: A light-emitting diode (LED) device is disclosed. The LED device includes a semiconductor substrate with a light-emitting diode chip disposed thereon. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the light-emitting diode chip. In one embodiment, the lens module comprises a glass substrate having a first cavity formed at a first surface thereof, a fluorescent layer formed over a portion of a first surface exposed by the first cavity, facing the light-emitting diode chip, and a molded lens formed over a second surface of the glass carrier opposing to the first surface.

Abstract: A solar cell module is provided, including a fixture with a solar cell wafer therein and a light-transmitting component formed in the fixture. The solar cell wafer comprises a semiconductor substrate with a plurality of photovoltaic elements formed thereon, wherein the photovoltaic elements are arranged in an array and a plurality of microlenses superimposed over the semiconductor substrate. A pitch between a center of the microlens and a center of the photovoltaic element thereunder increases from a center portion of the array of the photovoltaic elements toward an edge portion of the array of the photovoltaic elements. The light-transmitting component is opposite to the microlenses and partially changes a direction of incident light collected from an ambient from not being perpendicular to a top surface of the microlenses.

Abstract: Aspheric lens structures with dual aspheric surfaces and fabrication methods thereof are disclosed. An aspheric lens structure includes a first lens component with an aspheric top surface disposed on a second lens component, wherein the interface between the first lens component and the second lens component is spherical. The second lens component includes an aspheric back surface, wherein the radius of curvature of the aspheric top surface of the first lens component is different than the radius of curvature of the aspheric back surface of the second lens component. The second lens component may also include a planar back surface with a third lens component disposed on the planar back surface of the second component. The third lens component includes an aspheric back surface, wherein the radius of curvature of the aspheric top surface of the first lens component is different than the radius of curvature of the aspheric back surface of the third lens component.

Abstract: A process for the removal of lead content in anode slime by subjecting the latter to primary and secondary leach in a medium of an ammonium acetate solution at a temperature not exceeding 80.degree. C. Whereby lead dissolution is maximized and other metals are minimized. Separate the leach solution from the undissolved slime residue, crystallize lead from the separated leach solution and recover the crystallized lead acetate.

Abstract: A hydrometallurgical process for recovering precious metals, such as gold, silver, selenium, and tellurium etc. from anode slime has been developed and tested successfully. The process comprises three major unit operations: leaching, liquid-liquid extraction, and reduction. The decopperized anode slime is first leached with nitric acid at an elevated temperature to obtain a leach solution containing at least about 95% by weight of the silver content, 96% by weight of the selenium content and 76% by weight of the tellurium content of the decopperized anode slime. Silver in the nitric acid leach solution is recovered in the form of silver chloride. Subsequent to the recovery of silver chloride, the selenium, tellurium, copper and other impurities-containing solution is denitrated and chlorinated by a liquid-liquid extraction technique.