Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: Substrate structures for display devices and fabrication methods thereof The substrate structure comprises a substrate, an interfacial layer disposed on the substrate, and a patterned paste layer applied on the interfacial layer, wherein a contact angle of the interface between the patterned paste layer and the interfacial layer exceeds 35 degrees.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: A composition for forming a dielectric layer includes a liquid organometallic compound serving as a precursor with high dielectric constant, a photo-sensitive polymer or a non-photo-sensitive polymer and a solvent, wherein the liquid organometallic compound includes metal alkoxide, and the metal of the metal alkoxide includes Al Ti, Zr, Ta, Si, Ba, Ge and Hf. The dielectric layer formed by the composition includes the photo-sensitive polymer or the non-photo-sensitive polymer and an amorphous metal oxide formed therein.

Abstract: The invention related to a process for improving carrier mobility of organic semiconductor, comprising the steps of: forming a gate on a substrate; forming an insulator layer on the substrate and the gate; coating polyimide on the insulator layer to form an interlayer; forming an active layer on the interlayer; and forming a source and a drain.

Abstract: The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

Abstract: The invention related to a process for improving carrier mobility of organic semiconductor, comprising the steps of: forming a gate on a substrate; forming an insulator layer on the substrate and the gate; coating polyimide on the insulator layer to form an interlayer; forming an active layer on the interlayer; and forming a source and a drain.

Abstract: The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: This invention provides cycloaliphatic polyimide having the following formula (I): wherein 1 and n are integers from 4 to 7; m is an integer from 0 to 2; p is an integer from 1 to 8; polycyclic aliphatic compound R reprents C1-8 cycloalkyl, cycloalkenyl, cycloalkynyl, norbornenyl, decalinyl, adamantanyl, or cubanyl. That cycloaliphatic polyimide can be a through transparent film, their thermal stability is over 430° C. and dielectric constant is about 2.7.

Abstract: This invention provides cycloaliphatic polyimide having the following formula (I): 1