Abstract: A millimeter-wave antenna arrangement (1) comprising at least one first antenna array (2), said first antenna array (2) comprising a plurality of antenna elements (2a) such as patch antennas, and an artificial dielectric structure (3) superposed over said first antenna array (2). Said artificial dielectric structure (3) comprises a plurality of conductor layers (4) separated by dielectric layers (5), each conductor layer (4) comprising a plurality of periodically repeated conductor patterns (6). One conductor pattern (6) of each conductor layer (4) is associated with one of said antenna elements (2a), and the conductor patterns (6) associated with one antenna element (2a) are at least partially non-identical. Said artificial dielectric structure (3) has an artificial dielectric constant, and each dielectric layer has a natural dielectric constant, said artificial dielectric constant depending at least partially on the natural dielectric constants and preferably having a value between 10-30.

Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula: WP?2n(TE?TL)(1?1/n2)1/2+WL; wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.

Abstract: A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

Abstract: A pixel package includes a carrier, a first light-emitting unit, a second light emitting unit, a reflective layer, and a light-absorbing layer. The carrier has a top surface and a conductive layer. The first light-emitting unit and the second light-emitting unit are arranged on the conductive layer and have a light-emitting surface and a side surface respectively. The reflective layer is arranged on the top surface and contacts the conductive layer. The light-absorbing layer is arranged on the reflective layer and contacts the first side surface and the second side surface while exposing the first light-emitting surface and the second light-emitting surface. In a cross-sectional view, the light-absorbing layer has a first thickness and a second thickness between the first side surface and the second side surface. The first thickness is farther away from and the first side surface than the second thickness, and is smaller than the second thickness.

Abstract: A semiconductor device is provided, which includes a semiconductor epitaxial structure, a metal contact structure, and a metal oxide layer. The semiconductor epitaxial structure includes an active structure and a semiconductor contact layer located on the active structure along a vertical direction. The metal contact structure directly contacts the semiconductor contact layer. The metal oxide layer is overlapped with the metal contact structure in a horizontal direction. The metal oxide layer and the metal contact structure are separated in the horizontal direction.

Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Abstract: Thermoplastic compositions, methods of making the compositions, and composites containing the compositions are described. The thermoplastic composition can contain a polycarbonate, a polyphthalyl carbonate (PPC) copolymer, a poly (carbonate-siloxane) copolymer and an epoxy hydrostabilizer.

Abstract: An electronic device and an antenna structure are provided. The electronic device includes a metal housing, a partition wall, a first antenna module, and a second antenna module. The metal housing has a T-shaped slot. The slot includes an opening end, a first closed end, and a second closed end. The partition wall is connected with the metal housing. The first antenna module has a first feeding element and a radiating element. The second antenna module has a second feeding element and an antenna array. The first antenna module and the second antenna module are respectively disposed on two sides of the partition wall, and the first antenna module is closer to the opening end than the second antenna module.

Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package, in other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.

Abstract: A data transmission system and method thereof for edge computing are provided. A terminal mobile station international subscriber directory number (MSISDN) and a terminal IP of a target terminal are obtained with a domain name system (DNS) by a device providing communication services from the data transmission system. After data packets are sent to the data transmission system, if the target terminal is in an idle mode, a paging message is sent by a terminal wake-up module to enable the target terminal to return to a connected mode for communication. Before a connection is established between the data transmission system and the target terminal, downlink data packets can be temporarily stored, and the packets can be sent after the target terminal is in the connected mode. A computer readable medium for executing the data transmission method is also provided.

Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.

Abstract: An electronic device and an antenna structure are provided. The electronic device includes a metal housing, a partition wall, a first antenna module, and a second antenna module. The metal housing has a T-shaped slot. The slot includes an opening end, a first closed end, and a second closed end. The partition wall is connected with the metal housing. The first antenna module has a first feeding element and a radiating element. The second antenna module has a second feeding element and an antenna array. The first antenna module and the second antenna module are respectively disposed on two sides of the partition wall, and the first antenna module is closer to the opening end than the second antenna module.

Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula: WP?2n(TE?TL)(1?1/n2)1/2+WL; wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.

Abstract: A display device includes a first light-emitting module and a second light-emitting module. Each light-emitting module has a substrate, a plurality of LED dies arranged on the substrate, a reflective layer on the substrate, and a light-transmissive layer. The light-transmissive layer covers the substrate, the plurality of LED dies, and the reflective layer. Both the light-transmissive layer of the first module and the light-transmissive layer of the second module have rough uppermost surfaces. The first light-emitting module has a first reflectivity, the second light-emitting module has a second reflectivity, and a standard deviation between the first reflectivity and the second reflectivity is not greater than 0.5.

Abstract: A separating apparatus of biosubstance and a separating method of the same are provided. The separating method includes: providing a controller to select a positive separation process or a negative separation process to execute according to types of target biosubstances; providing a pipette pump to inject a first magnetic bead reagent or a second magnetic bead reagent into a sample according to the selected separation process, such that first immunomagnetic beads of the first magnetic bead reagent or second immunomagnetic beads of the second magnetic bead reagent are used for binding to the target biosubstances; providing a magnetic separation rack to enrich the target biosubstances so as to separate the target biosubstances and non-target biosubstances; and providing the pipette pump to separate the target biosubstances and the non-target biosubstances.

Abstract: A semiconductor package includes a die pad having a die attach surface, a first laterally separated and vertically offset from the die pad, a semiconductor die mounted on the die attach surface and comprising a first terminal on an upper surface of the semiconductor die, an interconnect clip that is electrically connected to the first terminal and to the first lead, and a heat spreader mounted on top of the interconnect clip. The interconnect clip includes a first planar section that interfaces with the upper surface of the semiconductor die and extends past an outer edge side of the die pad. The heat spreader covers an area of the first planar section that is larger than an area of the semiconductor die. The heat spreader laterally extends past a first outer edge side of the die pad that faces the first lead.

Abstract: Provided by the invention disclosure is a coating equipment. The coating equipment comprises a reaction chamber body provided with a reaction chamber, a gas supply part configured to supply gas to the reaction chamber, a pumping device configured to communicate with the reaction chamber, a pulse power supply adapted to provide the reaction chamber body with a pulsed electric field and a radio frequency power supply adapted to provide the reaction chamber body with a radio frequency electric field, wherein the reaction chamber is adapted to accommodate a plurality of workpiece. When the pulse power supply and the radio frequency power supply are turned on, the gas in the reaction chamber body is ionized under the radio frequency electric field and the pulsed electric field to generate plasma, and the plasma is deposited on the surface of the workpieces.

Abstract: A computer-implemented method, system, and computer program product for identifying application programming interface relationships of a product. Entity information for the product is generated. The entity information identifies a plurality of entities of the product, attributes of the entities, and relationships between the entities. The plurality of entities include application programming interfaces of the product and other entities of the product.

Abstract: A thermoplastic composition comprising: a homopolycarbonate; a poly(carbonate siloxane) component present in an amount effective to provide 0.5-20 wt % total siloxane content; an antimicrobial agent comprising silver zirconium phosphate, silver phosphate glass, or a combination thereof; optionally, an additive composition; each based on the total weight of the composition which totals to 100 wt %.