Abstract: A speaker device is provided. The speaker device includes a frame, and a vibration unit, a magnetic circuit unit, and air-permeable isolation member. The magnetic circuit unit includes a yoke fixed to the frame. The yoke and the frame are spaced to form a leakage port to enable leaking from a side surface of the speaker device. The sound-producing inner cavity communicates with the leakage port. The air-permeable isolation member completely covers the leakage port. The leakage port communicates with the outside through the leakage hole. Compared with the related art, the speaker device of the present disclosure has a yoke leakage structure, which can realize self-sealing and is conducive to assembling.

Abstract: A method for preparing-3,3?-diaminobenzidine, the method comprising the following steps: subjecting 4,4?-biphenol and N,N-dimethylsulfamoyl chloride to an esterification reaction in a specified solvent at 40-70° C. to obtain 4,4?-biphenyl bis(N,N-dimethylaminosulfonate) as a first intermediate; subjecting the 4,4?-biphenyl bis(N,N-dimethylaminosulfonate) to a chlorination reaction with a chlorinating reagent under acidic conditions to obtain 3,3?-dichloro-4,4?-biphenyl bis(N,N-dimethylaminosulfonate) as a second intermediate; subjecting the second intermediate 3,3?-dichloro-4,4?-biphenyl bis(N,N-dimethylaminosulfonate) to an ammonolysis reaction with anammoniation reagent in the presence of a combined catalyst to obtain a crude product of 3,3?,4,4?-tetraaminobiphenyl, wherein the combined catalyst is a mixture of proline, a cuprous salt and a phase transfer catalyst; and subjecting the crude product of 3,3?,4,4?-tetraaminobiphenyl to a post-treatment to obtain a purified 3,3?,4,4?-tetraaminobiphenyl product.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A fish school detection method and a system thereof, an electronic device and a storage medium are provided, the method includes inputting a to-be-detected fish school image into a fish school detection model; the fish school detection model including a feature extraction layer, a feature fusion layer and a feature recognition layer; extracting feature information of the to-be-detected fish school image based on the feature extraction layer, and determining a fish school feature map and an attention feature map based on an attention mechanism; fusing the fish school feature map and the attention feature map based on the feature fusion layer to determine a target fusion feature map; and determining a target fish school detection result based on the feature recognition layer and the target fusion feature map. Interference from environmental factors on detection results is eliminated, so as to effectively improve accuracy of the fish detection.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: An electronic cigarette atomizer and an electronic cigarette are disclosed. The electronic cigarette atomizer comprises an air inlet (1), an air inlet passage (2), an atomization cavity (3), an air outlet passage (4), an air outlet (5), and a suction nozzle (6) that are communicated in sequence. The electronic cigarette atomizer further comprises a housing (8) and an adjustment mechanism (7) for adjusting the air input of the air inlet (1). The air inlet passage (2), the atomization cavity (3), and the air outlet passage (4) are all arranged in the housing (8), and a top of the housing (8) is provided with a top cover (9). The adjustment mechanism (7) comprises a movable member (10) located in the top cover (9) and movable axially along the top cover (9).

Abstract: The present application discloses a cerebral perfusion state classification apparatus and method, a device, and a storage medium. The method includes: acquiring, by a transceiving module, cervical blood flow data from an ultrasound data collecting device; determining, by a processor, cerebral perfusion data corresponding to the cervical blood flow data based on the cervical blood flow data and a mapping relationship between the cervical blood flow data and the cerebral perfusion data, and classifying cerebral perfusion states of a plurality of brain regions based on blood perfusion characteristics of the plurality of brain regions in the cerebral perfusion data.

Abstract: A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: Disclosed is a nonlinear optimization method for parameters of ocean ecological dynamics model, comprising the following steps: acquiring a state variable set and a parameter set to be optimized; building an ocean ecological dynamics model; acquiring a final cost function equation group; solving the ocean ecological dynamics model to obtain numerical solutions of each state variable; acquiring a Hamilton function of the cost function equation group under a constraint condition, and acquiring an adjoint equation based on the Hamilton function; adjusting the parameter set to be optimized based on the adjoint equation to obtain an optimal parameter set.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: A method of exposing a wafer to a high-tilt angle ion beam and an apparatus for performing the same are disclosed. In an embodiment, a method includes forming a patterned mask layer over a wafer, the patterned mask layer including a patterned mask feature; exposing the wafer to an ion beam, a surface of the wafer being tilted at a tilt angle with respect to the ion beam; and moving the wafer along a scan line with respect to the ion beam, a scan angle being defined between the scan line and an axis perpendicular to an axis of the ion beam, a difference between the tilt angle and the scan angle being less than 50°.

Abstract: The present invention provides a speaker box including a housing with a sound hole and a speaker therein. The speaker includes a frame, a vibration system, a magnetic circuit system, and a covering shell. The vibration system includes a diaphragm dividing a receiving room of the housing into a front cavity communicating with the sound hole and a rear cavity, a voice coil assembly. The magnetic circuit system includes a yoke. The covering shell divides the rear cavity into a first rear cavity inside the speaker and a second rear cavity outside the speaker. The covering shell includes a bottom wall and a side wall. A recessing portion formed on the side wall, and the recessing portion communicates the first rear cavity with the second rear cavity.

Abstract: Disclosed is use of 5?-androst-3?,5,6?-triol or an analogue, a deuterated compound or a pharmaceutically acceptable salt thereof in the manufacture of a medicament for the treatment of cerebral small vessel disease in a patient. The cerebral small vessel disease is preferably cerebral microbleed. The cerebral microbleed is spontaneous cerebral microbleed, drug-related cerebral microbleed, or traumatic cerebral microbleed. The present invention demonstrates that these compounds significantly enhance the clearance of extravascular hemoglobin, and thus can be used to treat cerebral small vessel disease.

Abstract: An electronic cigarette atomization core and atomizer is disclosed. The electronic cigarette atomization core includes an atomization member (3), an outer sleeve (24), a connection sleeve (22), and atomization cotton (14). A lower segment of the connection sleeve (22) is sleeved outside an upper segment of the outer sleeve (24). The outer sleeve (24) is sleeved outside the atomization cotton (14). The outer sleeve (24) is provided with a first e-liquid passage hole (2401) capable of communicating an inner cavity of an electronic cigarette e-liquid bin (12) with the atomization cotton (14). The connection sleeve (22) is axially movable or circumferentially rotatable relative to the outer sleeve (24) to close or open the first e-liquid passage hole (2401). A buffer sealing structure is arranged between the connection sleeve (22) and the outer sleeve (24).