Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin parallel to each other and protruding higher than top surfaces of isolation regions. The isolation regions include a portion between the first and the second semiconductor fins. The method further includes forming a gate stack crossing over the first and the second semiconductor fins, etching a portion of the gate stack to form an opening, wherein the portion of the isolation regions, the first semiconductor fin, and the second semiconductor fin are exposed to the opening, etching the first semiconductor fin, the second semiconductor fin, and the portion of the isolation regions to extend the opening into a bulk portion of a semiconductor substrate below the isolation regions, and filling the opening with a dielectric material to form a cut-fin isolation region.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.

Abstract: A distributed system for creating a consistency snapshot for a distributed application includes a control node and multiple execution nodes including a source execution node, an intermediate execution node, and a leaf execution node. The source execution node receives a snapshot event, and generates a single-point snapshot of an application instance associated with the source execution node. Each of the intermediate execution node and the leaf execution node sequentially receives snapshot events separately sent by two parent nodes of the respective nodes, generates a single-point snapshot of an application instance associated with the respective nodes after receiving the first snapshot event, records a log of a task when executing the task triggered by another parent node different from a parent node sending the first snapshot event, and stops recording a log of a task triggered each time one snapshot event sent by a parent node is received subsequently.

Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.

Abstract: Embodiments for server port virtualization for guest logical unit number (LUN) masking in a host direct attach configuration using a storage adapter in a computing environment by a processor. An F switch port is simulated by an N storage port to enable either N-port virtualization (NPV) or N-port identification (ID) virtualization (NPIV) in the host direct attach configuration by directly attaching the N server port to the N storage port. A domain name system (DNS) operation is performed to cause each virtualized N-port ID to be mapped to fiber channel (FC) IDs in domain format of domain, area, port.

Abstract: Embodiments of the disclosed technology provide an apparatus for controlling a standing wave linear accelerator. An example standing wave linear accelerator includes an accelerating tube, a motor, and a microwave power source connected between the accelerating tube and the motor. An example apparatus includes a main processor configured to receive an envelope signal of a reflected wave signal output by the accelerating tube, determine whether an amplitude of the envelope signal is greater than an envelope threshold, and if it is determined that the amplitude of the envelope signal is less than the envelope threshold, determine whether to change a rotation direction of the motor by comparing the amplitude of the envelope signal with an envelope reference signal stored in a memory. The memory is connected to the main processor and is configured to store the envelope threshold and the envelope reference signal.

Abstract: A computing device can present, within a display, first network-associated content and a tab strip, the first network-associated content being associated with a first content locator, the tab strip including a first content indicator associated with the first content locator and a second content indicator associated with a second content locator, receive a directional input associated with the tab strip, in response to receiving the directional input, modify the presentation of the tab strip, the modification ending presentation of the first content indicator and initiating presentation of a third content indicator, the third content indicator being associated with a third content locator, receive a selection of the third content indicator, and in response to receiving the selection of the third content indicator, present second network-associated content at a location where the first network-associated content was previously presented, the second network-associated content being associated with the third con

Abstract: The disclosure relates to a display method and a display system. The display method includes: connecting a plurality of display devices in series with each other, the plurality of display devices including a main display device and at least one slave display device, the main display device having EDID; setting the connection order of the display device; correspondingly changing the EDID of the main display device according to the connection order of the display device; configuring the main display device to receive the display image according to the changed EDID; and configuring the display device to perform an image segmentation operation on the display image according to the connection order to respectively display multiple segmented regions of the display image.

Abstract: Described herein is use of a Caspase activator and an oncolytic virus in the preparation of an anti-tumor drug. As described, Caspase activator can enhance the anti-tumor effect of oncolytic virus, and the combination of Caspase activator and oncolytic virus produces a significant synergistic anti-tumor effect, and demonstrates an effective therapy for the treatment of tumors that are less sensitive to other pharmaceutical treatments.

Abstract: A bispecific antibody that simultaneously targets humanized p185 and VEGF, consisting of the four peptide chains: two identical antibody light chains that are the light chains of the antibody that identify the epitope or antigen of p185, and two identical antibody heavy chains that have the amino acid sequence of a recombinant antibody from N- to C-terminus, a light chain sequence of the antibody that recognizes the p185 epitope or the antigen; a constant heavy chain region; a flexible short peptide sequence; and either a single-stranded variable region sequence (ScFv) of anti-VEGF antibody which recognizes the VEGF epitope or antigen, or a receptor domain sequence that binds to VEGF. The bispecific antibody has the ability to bind p185 and VEGF at the same time, inhibits the proliferation of tumor cells, and promotes the expression of IFN-? by T lymphocytes; it may be applied as anti-tumor antibody drug.

Abstract: Disclosed is a use of 5?-androstane-3?,5,6?-triol, an analogue, a deuterated derivative, and a pharmaceutically acceptable salt thereof in manufacture of a medicament for the treatment of hemorrhagic stroke in a patient. The hemorrhagic stroke is intracerebral hemorrhage or subarachnoid hemorrhage.

Abstract: Provided are a load transfer method and system in thunder and lightning weather. The method includes: detecting lightning and predicting a position and time of a lightning strike to obtain a lightning prediction result; determining a transmission line possibly struck by lightning in a power grid according to the lightning prediction result; determining a load transfer scheme; and before the lightning occurs, transferring at least part of loads on the transmission line possibly struck by lightning according to the load transfer scheme.

Abstract: A semiconductor structure includes a first metal gate disposed over a first device region of a semiconductor substrate, where the first metal gate includes a first work function metal layer, a second metal gate disposed over a second device region of the semiconductor substrate, where the second metal gate includes a second work function metal layer, a first gate cut feature separating the first metal gate, where sidewalls of the first gate cut feature are defined by the first work function metal layer and a bulk conductive layer, and a second gate cut feature separating the second metal gate, where sidewalls of the second gate cut feature are defined by the second work function metal layer but not by the bulk conductive layer.

Abstract: Provided are applications of a hexokinase 2-specific inhibitor in preparing a medicament for preventing and treating acute central nervous system injury.

Abstract: Use of 5?-androstane-3?,5,6?-triol and analogs thereof in the preparation of a drug for the prophylaxis or treatment of an altitude sickness caused by hypobaric hypoxia is provided, so as to provide a new drug for the prophylaxis or treatment of an altitude sickness. Researches revealed that 5?-androstane-3?,5,6?-triol treatment can effectively reduce vasogenic edema of brain tissue of Macaca fascicularis caused by hypobaric hypoxia, reduce the increased cerebral water content, and protect from neuronal vacuolar degeneration caused by hypobaric hypoxia, therefore it can improve neurological dysfunctions caused by hypobaric hypoxia and is useful in prophylaxis or treatment of an altitude sickness.

Abstract: The present invention generally relates to an isoxazole derivative, a preparation therefor, and a use thereof. In particular, the present invention provides a farnesoid X receptor (FXR) agonist compound, and a stereoisomer, a tautomer, a polymorph, a solvate (e.g., a hydrate), a pharmaceutically acceptable salt, an ester, a metabolite, and an N-oxide, and the chemically protected forms and prodrugs thereof. The present invention further provides a preparation method for the compound, an intermediate thereof, and a pharmaceutical composition and kit containing the same and used thereof for treating FXR-mediated diseases or conditions.

Abstract: Disclosed is use of 5?-androst-3?,5,6?-triol or an analogue, a deuterated compound or a pharmaceutically acceptable salt thereof in the manufacture of a medicament for the treatment of cerebral small vessel disease in a patient. The cerebral small vessel disease is preferably cerebral microbleed. The cerebral microbleed is spontaneous cerebral microbleed, drug-related cerebral microbleed, or traumatic cerebral microbleed. The present invention demonstrates that these compounds significantly enhance the clearance of extravascular hemoglobin, and thus can be used to treat cerebral small vessel disease.

Abstract: The present disclosure provides a ray calibration device and a working method thereof, and a radiation imaging system and a working method thereof, and belongs to the field of radiation imaging technology. The present disclosure can solve the problems that the existing calibration devices have low calibration efficiency and require relatively large spaces. The ray calibration device of the present disclosure includes a driving part, a cam part and a calibration part, wherein the calibration part is located below the cam part; the driving part is adapted to drive the cam part to rotate; and the cam part is adapted to exert a force on the calibration part to enable the calibration part to move into a ray area downwards.