Patents by Inventor Wei Yuan

Wei Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11929434
    Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.
    Type: Grant
    Filed: April 15, 2022
    Date of Patent: March 12, 2024
    Assignee: eMemory Technology Inc.
    Inventors: Chih-Hsin Chen, Shih-Chen Wang, Tsung-Mu Lai, Wen-Hao Ching, Chun-Yuan Lo, Wei-Chen Chang
  • Publication number: 20240081051
    Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers. The gate layers and the insulating layers are stacked alternatingly and are formed into stair steps in a staircase region. The semiconductor device includes a first landing pad on a first gate layer of a first stair step. The first gate layer is a top gate layer of the first stair step. The semiconductor device further includes a first sidewall isolation structure on a riser sidewall of a second gate layer of a second stair step. The second gate layer is a top gate layer of the second stair step and is stacked on the first gate layer in the memory stack. The first sidewall isolation structure isolates the second gate layer from the first landing pad.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Zhen GUO, Wei XU, Bin YUAN, Chuang MA, Jiashi ZHANG, ZongLiang HUO
  • Publication number: 20240079230
    Abstract: A plasma-assisted annealing system includes a high temperature furnace, a plasma-induced dissociator and a connecting duct. The plasma-induced dissociator is provided to dissociate a working gas and exhaust the dissociated working gas from its working gas outlet. Both ends of the connecting duct are connected to the working gas outlet of the plasma-induced dissociator and a gas inlet of the high temperature furnace, respectively. The working gas dissociated in the plasma-induced dissociator is introduced into the high temperature furnace via the connecting duct.
    Type: Application
    Filed: December 12, 2022
    Publication date: March 7, 2024
    Inventors: Wei-Chen Tien, Cheng-Yuan Hung, Chang-Sin Ye, Chun-Kai Huang, Yii-Der Wu
  • Publication number: 20240078543
    Abstract: Embodiments of this specification provide a payment service implementation method and apparatus. According to the method in the embodiments, when a payment service is performed, anonymous processing needs to be performed on original payment account information. First, a random number is used to perform transform processing on the original payment account information, so that information encrypted each time by using a public key is different. Then, the public key and an encryption algorithm obtained in advance are used to encrypt payment account information obtained after the transform processing, so as to obtain anonymous payment account information, thereby completing an anonymous processing process. After anonymous processing is completed, the obtained anonymous payment account information may be used to perform a payment operation.
    Type: Application
    Filed: January 13, 2022
    Publication date: March 7, 2024
    Inventors: Bingying Zhu, Zhi Xin, Wei Yuan, Xiaofei Wan
  • Publication number: 20240074474
    Abstract: Non-meat-derived yeast extracts having rich meat flavor, and a preparation method therefor. The method includes: (1) mixing a yeast extract, vitamins, amino acids and water, and adding reducing sugar as needed; (2) adjusting the pH of a mixture obtained in step (1) at 4.0-8.0 with a pH regulator, and stirring the mixture to react at a temperature of 80-130° C. for 30-180 min to obtain a thermal-heated product; (3) adding vegetable oil into the thermal-heated product, and adding edible salt as needed to obtain a material to be dried; and (4) performing vacuum drying on the material to be dried obtained in step (3), and crushing the dried material. According to the present invention, the yeast extract is taken as a main raw material of a Maillard reaction, and a small amount of vitamins, amino acids and reducing sugar are added, so that the formula is simple.
    Type: Application
    Filed: December 10, 2021
    Publication date: March 7, 2024
    Inventors: Pei LI, Qi YUAN, Xianwu QIN, Ku LI, Guanqun TANG, Jian XIONG, Wei LI
  • Patent number: 11918329
    Abstract: A physiological detection device includes system including a first array PPG detector, a second array PPG detector, a display and a processing unit. The first array PPG detector is configured to generate a plurality of first PPG signals. The second array PPG detector is configured to generate a plurality of second PPG signals. The display is configured to show a detected result of the physiological detection system. The processing unit is configured to convert the plurality of first PPG signals and the plurality of second PPG signals to a first 3D energy distribution and a second 3D energy distribution, respectively, and control the display to show an alert message.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: March 5, 2024
    Assignee: PIXART IMAGING INC.
    Inventors: Chiung-Wen Lin, Wei-Ru Han, Yang-Ming Chou, Cheng-Nan Tsai, Ren-Hau Gu, Chih-Yuan Chuang
  • Patent number: 11923205
    Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: March 5, 2024
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Kun-Ju Li, Ang Chan, Hsin-Jung Liu, Wei-Xin Gao, Jhih-Yuan Chen, Chun-Han Chen, Zong-Sian Wu, Chau-Chung Hou, I-Ming Lai, Fu-Shou Tsai
  • Patent number: 11922058
    Abstract: Embodiments of a three-dimensional (3D) memory device and a method of operating the 3D memory device are provided. The 3D memory device includes an array of 3D NAND memory cells, an array of static random-access memory (SRAM) cells, and a peripheral circuit. The array of SRAM cells and the peripheral circuit arranged at one side are bonded with the array of 3D NAND memory cells at another side to form a chip. Data is received from a host through the peripheral circuit, buffered in the array of SRAM cells, and transmitted from the array of SRAM cells to the array of 3D NAND memory cells. The data is programmed into the array of 3D NAND memory cells.
    Type: Grant
    Filed: December 1, 2021
    Date of Patent: March 5, 2024
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Yue Ping Li, Wei Jun Wan, Chun Yuan Hou
  • Publication number: 20240070308
    Abstract: Embodiments of the present disclosure relate to a permission setting method and apparatus, a device, and a medium. The method includes: displaying a permission customization control, in response to a trigger operation on a permission setting object of task information, the permission setting object including a first information object and/or a second information object, the second information object being subordinate to the first information object; displaying a permission editing interface, in response to a trigger operation on the permission customization control, and receiving customization permission information via the permission editing interface; and displaying the customization permission information corresponding to the permission setting object. Therefore, a hierarchy structure based on the task information satisfies a setting need for content-based permission customization, and improves a permission management efficiency.
    Type: Application
    Filed: October 24, 2023
    Publication date: February 29, 2024
    Inventors: Wenzong MA, Liang CHEN, Yingtao LIU, Wei REN, Qiushuo HUANG, Yuejiang YUAN, Hao HUANG, Jianhui WU, Yalong ZOU, Linghui ZHOU, Mengzhang WU, Yanhui ZHAO, Xinlei GUO
  • Publication number: 20240071988
    Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.
    Type: Application
    Filed: October 11, 2022
    Publication date: February 29, 2024
    Inventors: Kun-Ju LI, Hsin-Jung LIU, Wei-Xin GAO, Jhih-Yuan CHEN, Ang CHAN, Chau-Chung HOU
  • Publication number: 20240071833
    Abstract: The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.
    Type: Application
    Filed: August 25, 2022
    Publication date: February 29, 2024
    Inventors: Yi-Huan Chen, Huan-Chih Yuan, Yu-Chang Jong, Scott Yeh, Fei-Yun Chen, Yi-Hao Chen, Ting-Wei Chou
  • Publication number: 20240070043
    Abstract: A method for detecting performance of a number of hard disks working under various operating systems, comprising: collecting of performance parameter of hard disks in several pre-determined systems, storing the parameters in a uniform format to obtain unified data; analyzing the unified data to obtain feature parameters of the hard disk; comparing the feature parameters and preset name string to obtain performance data of the hard disk; classifying the hard disk and establishing a performance database by the performance data of the hard disks of different kinds; presenting the data in the performance database with a preset visual tool, the data is regarded detecting results of the hard disks. Performance data from a plurality of systems can thus be presented by the visual tool running across platforms, which improves the scope and immediacy of detection. An apparatus, an electrical device, and a storage medium are also disclosed.
    Type: Application
    Filed: October 31, 2022
    Publication date: February 29, 2024
    Inventors: WEI WEI, JIE YUAN
  • Patent number: 11898076
    Abstract: A contact lens includes at least one color changeable region, wherein the color changeable region includes at least one photoluminescence material. When a wavelength of the photoluminescence material having a maximum radiation intensity is WEmMx, an average transmittance in a wavelength range of 400 nm-700 nm of the color changeable region is T4070, a size of a total area of the color changeable region is AC, and a size of a total area of the contact lens is AL, certain conditions relating to WEmMx, T4070 and AC/AL are satisfied.
    Type: Grant
    Filed: November 11, 2022
    Date of Patent: February 13, 2024
    Assignee: LARGAN MEDICAL CO., LTD.
    Inventors: Wei-Yuan Chen, Po-Tsun Chen, Wei-Chun Chen, Chun-Hung Teng
  • Patent number: 11875097
    Abstract: Systems and methods are provided. A physical measurement of the core loss increase associated with a physical deformation of a material of the device is obtained. A data structure describing a model of the device is accessed. A first edge of the model of the device associated with a physical deformation of the device is identified. A finite element mesh is generated to include a single layer mesh comprising a plurality of mesh elements associated with the first edge of the finite element mesh. A core loss value is assigned to each of the plurality of mesh elements. Each of the core loss values representative of the physical measurement of the core loss increase of the material as a result of the physical deformation of the material. An electromagnetic model is generated by performing a finite element analysis based on the finite element mesh and the single layer mesh.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: January 16, 2024
    Assignee: Ansys, Inc.
    Inventors: Dingsheng Lin, Ping Zhou, Chuan Lu, Ningning Chen, Wei Yuan
  • Publication number: 20240010816
    Abstract: A plasticizer, a plastic composition and a plastic product are provided. The plasticizer composition and the plastic product include the plasticizer, and the plasticizer has a biodegradability. The plasticizer has a structure represented by Formula (I), in which each of the symbols thereof is as defined in the specification, and the plasticizer has a central structure.
    Type: Application
    Filed: June 16, 2023
    Publication date: January 11, 2024
    Inventors: Wei-Yuan CHEN, Po-Tsun CHEN, Tzu-Rong LU, Rih-Sian CHEN, Yu Jie HONG, Chun-Hung TENG
  • Publication number: 20240005054
    Abstract: The present invention discloses a blade dimensional chain modeling method considering mortise-tenon connection, which relates to the technical field of aerospace component assembly deviation analysis. The blade dimensional chain modeling method described in the present invention can be used not only for the position deviation prediction in the initial state of the blade tip after assembly, but also for the deviation analysis of any position of the blade. The method is an explicit mathematical model with the characteristics of simplicity and high efficiency of solution.
    Type: Application
    Filed: May 26, 2023
    Publication date: January 4, 2024
    Inventors: Zhimin LI, Wei Yuan, Tao Liu, Yuping Wu, Hehe Kang
  • Publication number: 20240000113
    Abstract: A consumable is provided. The consumable includes (a) at least one sweetener, and (b) a sweetness modifier comprising an extract or fraction from Viscum articulatum or at least one flavan or flavanone compound. The at least one sweetener is present is a sweetening amount.
    Type: Application
    Filed: December 17, 2021
    Publication date: January 4, 2024
    Inventors: Feng SHI, Moises GALANO, Laura H. LUCAS, Yosuke ONUMA, Matthew Steven ROACH, loana Maria UNGUREANU, Wei YUAN
  • Publication number: 20240005053
    Abstract: The present invention is applicable to the field of aerospace component assembly deviation analysis, and provides a magazine assembly deviation modeling method to characterize the uncertainties in the local multi-parallel dimensional chains in the magazine bolted assembly structure, and to predict the spatial attitude deviation as well as the statistical distribution of the assembled magazine by tolerance analysis and randomness simulation of the assembly. The magazine assembly deviation modeling method described in the present invention can characterize the transfer and accumulation of complex three-dimensional tolerances in the multi-level magazine assembly process.
    Type: Application
    Filed: May 26, 2023
    Publication date: January 4, 2024
    Inventors: Zhimin LI, Tao Liu, Hehe Kang, Wei Yuan, Yuping Wu
  • Patent number: 11862712
    Abstract: A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Feng-Ching Chu, Chung-Chi Wen, Wei-Yuan Lu, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20230406728
    Abstract: The present disclosure relates to a method and apparatus for prolonging a continuous operation period of a methanol-to-olefins water washing process. The method may perform micro cyclone treatment on methanol-to-olefins washing water. The method may also deliver the washing water subjected to micro cyclone treatment and oil removal to a fluidized bed separator for treatment. The method may also adjust the backwash flow to release the intercepted catalyst powder and empty the dirt holding capacity of a pore. The method may also perform three-phase separation on a gas-liquid-solid mixture subjected to backwash, returning the obtained filter media to a particle bed layer, and respectively discharging a backwashing liquid a backwashing gas which comprise a catalyst. The method may also switch the fluidized bed separator to a normal working state, completing the active regeneration of the particle bed layer, and continuing to operate.
    Type: Application
    Filed: September 17, 2020
    Publication date: December 21, 2023
    Inventors: Wenjie LV, Hualin WANG, Jiangi CHEN, Yu LIU, Lei SHI, Ligong QIAO, Jie ZHANG, Guoping CHANG, Bing LIU, Xin CUI, Weichi SANG, Jinsong WANG, Hongpeng MA, Wei YUAN, Yujie JI