Abstract: A contact lens product includes a multifocal contact lens and a buffer solution. The multifocal contact lens is immersed in the buffer solution. The multifocal contact lens includes a central region and at least one annular region. The annular region concentrically surrounds the central region, and a diopter of the annular region is different from a diopter of the central region. The multifocal contact lens is made of silicone hydrogel or hydrogel. The annular region closest to a periphery of the multifocal contact lens is a first annular region.

Abstract: A consumable is provided. The consumable includes (a) at least one sweetener, and (b) a sweetness modifier comprising an extract or fraction from Stelmatocrypton khasianum or at least one caffeoylquinic acid or tormentic acid compound. The at least one sweetener is present is a sweetening amount.

Abstract: A making device of ice balls comprises a refrigeration chamber unit; the refrigeration chamber unit comprises a lower half ball mold body, an upper half ball mold body and a water circulation unit; in addition, a cover plate is arranged above the refrigeration chamber unit, and a water injection hole is arranged on the cover plate; in addition, a plurality of low-temperature condensing tubes are arranged in the lower half ball mold body; in addition, the refrigeration chamber unit further comprises a thermo electric cooler, and a cold end face of the thermo electric cooler is attached to a bottom surface of the lower half ball mold body; the upper half ball mold body is arranged above the lower half ball mold body, a plurality of convection circulation holes are distributed on the upper half ball mold body, and a water inlet hole is arranged in the center of the upper half ball mold body; and the water circulation unit is arranged on the cover plate and comprises a pump, and the pump is respectively connected

Abstract: A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.

Abstract: A steel material is disclosed. The steel material includes components in the following mass percentages: 14% to 20% of nickel, 7.5% to 11% of cobalt, 4% to 7% of molybdenum, to 0.5% of rhenium and/or a rare earth element, less than or equal to 0.2% of manganese, less than or equal to 0.2% of silicon, less than or equal to 0.1% of carbon, less than or equal to of oxygen, iron, and inevitable impurities. The steel mechanical part is made of the steel material. The preparation method includes: mixing alloy powder and a binder to prepare feed particles; performing injection molding on the feed particles to obtain an injection green billet of the steel mechanical part; performing debinding and sintering on the injection green billet in sequence to obtain a sintered blank; and performing heat treatment on the sintered blank to obtain the steel mechanical part.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.

Abstract: Methods and agents for modulating intracellular coenzyme A levels are described for therapeutic purposes. Increasing intracellular coenzyme A increases alternate macrophage activation resulting in suppression or resolution of an immune response for benefit in treating inflammatory diseases. Decreasing intracellular coenzyme A levels decreases alternate macrophage activation which is beneficial in treating NASH/NAFLD and various fibrotic diseases as well as reversing immune suppressing activity of tumor-associated immune cells such as macrophages for the treatment of cancer.

Abstract: Embodiments of this application disclose a call method and an apparatus. In the call method, when a user does not actively select an audio device as a voice pickup device and a voice play device, after establishing a call connection to another electronic device, an electronic device selects, from available audio devices, an audio device that meets a user expectation as the voice pickup device and the voice play device. According to technical solutions provided in the embodiments of this application, user experience in a call process can be improved.

Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.

Abstract: A steam valve for a cooking utensil and the cooking utensil are provided. The steam valve includes a valve base, a bonnet and a barrier member. The bonnet and the valve base form a mounting chamber. The valve base has a steam inlet, and at least one of the valve base and the bonnet has a steam outlet. The barrier member is mounted in the mounting chamber, the barrier member and a top wall of the bonnet define a first passage therebetween, steam flows from the steam inlet via the first passage to the steam outlet, and a bottom wall of the valve base corresponding to the barrier member is disposed obliquely such that liquid flows back to the steam inlet.

Abstract: An example apparatus for predicting eye fatigue includes an image receiver to receive an image of an eye. The apparatus also includes a fatigue predictor to predict eye fatigue in the eye based on a calculated blood vessel density score of the eye in the image. The apparatus further includes an alert generator to generate an alert in response to predicting the eye fatigue.

Abstract: The present disclosure relates to a deep purification device and method for methanol-to-olefin washing water. Provided is a deep purification device for methanol-to-olefin washing water, comprising: a quench tower (1-1), a water washing tower (1-2) connected to an outlet at the top of the quench tower (1-1), a boiling bed separator (1-3) having the top thereof connected to the bottom of the water washing tower (1-2), a fiber coalescer (1-4) connected to the bottom of the boiling bed separator (1-3), and a buffer settling tank (1-5) connected to the sidewall of the boiling bed separator (1-3) at a position near the top. Further provided is a deep purification method for methanol-to-olefin washing water.

Abstract: A computer-implemented method for meshing a model of a physical electro-magnetic assembly is disclosed. The method includes separating the base mesh of the model into two domains and freezing the boundary between these domains. Each domain is then sent for mesh refinement by separate computer processors. Each computer processor generates a refined mesh of the respective domain without communication between processors. Two-way boundary mesh mapping is then performed, resulting in a global conformal mesh. Surface recovery and identity assignment are then performed by separate computer processors in parallel for each domain, without communication between processors. Related apparatus, systems, techniques, methods and articles are also described.

Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.

Abstract: A method for labeling an image object and a circuit system are provided. In the method, an object classification method is used to segment an image into one or more regions. Each of the regions can be classified into one classification assigned with a classification label. A depth estimation method is used to estimate a depth of each pixel of the image. Whether or not the depth of the pixel matches the classification of the region to which the pixel belongs is determined. When the depth of the pixel matches the classification of the region, a post-processing process is performed on the image based on weights assigned to the regions according to the classification label of the region. Conversely, when the depth of the pixel does not match the classification of the region, the pixel is regarded as noise that does not require the post-processing process.

Abstract: A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.

Abstract: A method according to the present disclosure includes depositing, over a substrate, a stack including channel layers interleaved by sacrificial layers, forming a first fin structure and a second fin in a first area and a second area of the substrate, depositing a first dummy gate stack over the first fin structure and a second dummy gate stack over the second fin structure, recessing source/drain regions of the first fin structure and second fin structure to form first source/drain trenches and second source/drain trenches, selectively and partially etching the sacrificial layers to form first inner spacer recesses and second inner spacer recesses, forming first inner spacer features in the first inner spacer recesses, and forming second inner spacer features in the second inner spacer recesses. A composition of the first inner spacer features is different from a composition of the second inner spacer features.