Abstract: Plasma ashing and/or etching using a solid sapphire disk is disclosed. A plasma etcher/asher of one embodiment of the invention includes at least a chamber body, upper and lower baffles, and a solid sapphire disk. The chamber body defines an interior chamber in which a semiconductor wafer is positionable for etching or ashing. The baffles are positioned over the semiconductor wafer, and distribute gas onto the semiconductor wafer. The solid sapphire disk has no holes, and is positioned over one of the baffles to affect distribution of the gas onto the semiconductor wafer. The solid sapphire disk of the invention provides for more uniform distribution of the gas onto the semiconductor wafer. As a result, etching or ashing of the semiconductor wafers occurs more uniformly, providing for more uniformly thick wafers.

Abstract: A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

Abstract: A process of forming a solder bump on a semiconductor device including vibrating a solder reservoir carrier in a vertical direction while pressure and heat are applied to the solder reservoir. An engagement surface of the solder reservoir is contacted with an engagement surface of the semiconductor device and the semiconductor device is vibrated in a horizontal direction to reflow a portion of the solder reservoir on the engagement surface. The solder reservoir carrier and the semiconductor device are moved away from each other so that additional solder is deposited and a solder column is grown on the semiconductor device. The solder column is cut off from the solder reservoir by vibrating the solder reservoir carrier in a horizontal direction to form a solder bump on the semiconductor device.

Abstract: A new method and apparatus is provided for the cleaning and drying of a wafer. An IPA vapor is created using an ultrasonic nebulizer that can be operated at a relatively low temperature. The water and the IPA that is used by the cleaning and drying process will be heated and evaporated using energy supplied by a microwave source of energy.

Abstract: The present invention is directed to a filler assembly for dispensing liquid to and from a container capable of storing an indicated liquid. The filler assembly has a portable part and a stationary part cooperating to provide a sealed dispensing means for communicating an indicated liquid from an indicated liquid source to a container and for safely communicating the indicated liquid from the container to another location. The portable part and the stationary part are adapted to sealably mate together and further provide means for preventing misassembly of the two parts. The portable part provides dispensing means capable of communicating the liquid from the stationary part to a remote location. The stationary part is adapted to further sealably mate and communicate with a container capable of storing an indicated liquid.

Abstract: A process of forming a solder bump on a semiconductor device including vibrating a solder reservoir carrier in a vertical direction while pressure and heat are applied to the solder reservoir. An engagement surface of the solder reservoir is contacted with an engagement surface of the semiconductor device and the semiconductor device is vibrated in a horizontal direction to reflow a portion of the solder reservoir on the engagement surface. The solder reservoir carrier and the semiconductor device are moved away from each other so that additional solder is deposited and a solder column is grown on the semiconductor device. The solder column is cut off from the solder reservoir by vibrating the solder reservoir carrier in a horizontal direction to form a solder bump on the semiconductor device.

Abstract: A high-speed multi-task system which configures with an industrial personal computer and a numerical controller. The industrial personal computer handles the human-machine interface, visual function and main process control, while the numerical controller controls the movements of hardware and input/output. Conventional serial communication port RS-232 is employed for data transmission between the two sub-systems. The high-speed multi-task system of the present invention is built to work in a real-time extension environment to optimize the control and efficiency of a wire bonding system.