Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.

Abstract: An adaptive vehicle headlight is provided for being installed on a vehicle body for use. The adaptive vehicle headlight includes a light body, an optical lens, a driver, and a control unit. The optical lens, the driver, and the control unit are integrated into the light body. In practice, the optical lens can optionally include a light distributing member. The control unit can cause an operation of the driver according to a tilt angle of the vehicle body, such that the optical lens and/or the light distributing member are rotated to a predetermined angle, so as to produce an illumination pattern in a horizontal state.

Abstract: A physiological sensing device for sensing physiological signal of an organism is provided. The physiological sensing device includes a sensing chip, a coupling sensing electrode and a coupling dielectric stacked layer. The coupling sensing electrode is electrically connected to the sensing chip. The coupling dielectric stacked layer covers the coupling sensing electrode. The coupling dielectric stacked layer is located between the coupling sensing electrode and the organism. The coupling dielectric stacked layer includes a first dielectric layer and a second dielectric layer. The dielectric constant of the second dielectric layer is greater than that of the first dielectric layer. The second dielectric layer is located between the first dielectric layer and the organism.

Abstract: A thermally conductive board includes a first metal layer, a second metal layer, and a thermally conductive layer. The material of the first metal layer includes copper, and the first metal layer has a first top surface and a first bottom surface opposite to the first top surface. A first metal coating layer covers the first bottom surface. The material of the second metal layer includes copper, and the second metal layer has a second top surface and a second bottom surface opposite to the second top surface. A second metal coating layer covers the second top surface and faces the first metal coating layer. The thermally conductive layer is an electrically insulator laminated between the first metal coating layer and the second metal coating layer.

Abstract: An optical film, display module, and display screen, wherein the optical film comprises a main body, multiple microstructures, and an opaque layer. The microstructures are positioned on one side of the main body, and these microstructures are protruding arcuate structures. The opaque layer is affixed to the main body and is set opposite the microstructures on the other side of the main body, the opaque layer includes multiple apertures. Wherein, the center point of the apertures overlaps with the center point of the microstructures on a projection plane. Wherein, the equivalent diameter of the apertures divided by the equivalent diameter of the microstructures is less than or equal to 0.3, the equivalent diameter of the microstructures divided by the thickness of the main body is less than or equal to 1.3, and greater than or equal to 0.7. Wherein, the opaque layer is oriented towards the light source.

Abstract: A double-sided aspheric diffractive multifocal lens and methods of manufacturing and design of such lenses in the field of ophthalmology. The lens can include an optic comprising an aspheric anterior surface and an aspheric posterior surface. On one of the two surfaces a plurality of concentric diffractive multifocal zones can be designed. The other surface can include a toric component. The double-sided aspheric surface design results in improvement of the modulation transfer function (MTF) of the lens-eye combination by aberration reduction and vision contrast enhancement as compared to one-sided aspheric lens. The surface having a plurality of concentric diffractive multifocal zones produces a near focus, an intermediate focus, and a distance focus.

Abstract: The present disclosure discloses a method for dual-motor control on an electric vehicle based on adaptive dynamic programming. First, total torque required is calculated based on obtained data information of the electric vehicle under various driving conditions, and offline training is conducted on an execution network and an evaluation network. Then total torque is dynamically distributed for two motors of the electric vehicle under various driving conditions to obtain an efficiency MAP database. Afterwards, iteration and online learning are conducted on the execution network and the evaluation network based on data information of the electric vehicle under different driving conditions that is obtained in real time, so as to find an optimal control law for the electric vehicle under a real-time driving condition. In this way, the dual-motor control on the electric vehicle is optimized.

Abstract: A method for verifying a low-density parity-check (LDPC) unit capable of being applied in a memory system can include receiving original data corresponding to a memory device, encoding the original data by the LDPC unit to be verified, injecting errors into the encoded original data by a data pattern for generating verifying data, and verifying a soft decode capability of the LDPC unit by utilizing the verifying data. The data pattern can include the errors generated by threshold voltage (Vth) distributions interlaced between two neighboring logic states of 2n logic states of the memory device. The method and system can provide an error injection to accurately and efficiently verify a LDPC soft decode capability of the LDPC unit, decrease errors, increase error correction accuracy and efficiency, more accurately model actual threshold voltage (Vth) distributions, increase flexibility, increase speed, increase performance, and reduce firmware overhead.

Abstract: Method for control protocol frame transmission and electronic device are provided. The method comprises following operations. By the electronic device operating in an advanced line encoding mode and having a first burst from the electronic device to the other electronic device, the first burst is closed and a second burst is opened from the electronic device to the other electronic device for request frame transmission, wherein the electronic device operating in the advanced line encoding mode is configured to transmit data by using an advanced line encoding having an effective data rate larger than an effective data rate of 8b/10b encoding. By the electronic device, a request frame is transmitted in the second burst.

Abstract: In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.

Abstract: Techniques and apparatuses directed to component shielding are described in this document. A first aspect relates to a system including a printed circuit board (PCB) oriented along a first plane, a device on the PCB, and a component shield having a wall structure oriented perpendicular to the first plane and a cover structure connected to the wall structure. The system includes a housing structure oriented along a second plane that is substantially parallel to the first plane. The first and second planes define a shielded space within which the component shield and the device reside. The system further includes a shielding layer residing at least partially between the cover and housing structures. The shielding layer has an irregular cross-section along a fourth plane perpendicular to at least one of the first or second planes and a third plane. The irregular cross-section includes a protrusion that extends from the third plane.

Abstract: The present disclosure provides an audio compression device, an audio compressing system and an audio compression method. The audio compression device comprises a first transceiver and a first processor. The first transceiver is connected to the first processor. The processor obtains an audio signal and an available bandwidth, and the processor performs an audio compression encoding on the audio signal to obtain a sample audio signal, and then compares with the audio signal and the sample audio signal to generate a residual signal, and the residual signal is transmitted according to the available bandwidth. The audio signal can be completely transmitted to an audio decompression device to reduce the distortion of the audio signal.

Abstract: A novel additive for recycling thermoset materials, its related recyclable thermoset composition and its application are disclosed. Specifically, the composition of the additive comprises at least one copolymer that has at least one carbamate group, at least one carbonate group and/or at least one urea group, and a number-average molecular weight of the copolymer is between 100 and 50,000 Da.

Abstract: A method of manufacturing a semiconductor device includes forming a first bonding layer over a substrate of a first wafer, the first wafer including a first semiconductor die and a second semiconductor die, performing a first dicing process to form two grooves that extend through the first bonding layer, the two grooves being disposed between the first semiconductor die and the second semiconductor die, performing a second dicing process to form a trench that extends through the first bonding layer and partially through the substrate of the first wafer, where the trench is disposed between the two grooves, and thinning a backside of the substrate of the first wafer until the first semiconductor die is singulated from the second semiconductor die.

Abstract: A method includes putting a first package component into contact with a second package component. The first package component comprises a first dielectric layer including a first dielectric material, and the first dielectric material is a silicon-oxide-based dielectric material. The second package component includes a second dielectric layer including a second dielectric material different from the first dielectric material. The second dielectric material comprises silicon and an element selected from the group consisting of carbon, nitrogen, and combinations thereof. An annealing process is performed to bond the first dielectric layer to the second dielectric layer.

Abstract: At least one computer processor can replace visual words of an unsupervised machine learning classification model with visual objects of an image. At least two co-occurring single visual objects adjacent to each other in pixels of the image can be combined to obtain a compound visual object. The unsupervised machine learning classification model can be augmented to model the image as a mixture of subjects, where each subject is represented through placements of the visual objects in a mixture of concentric spheres centering on a mixture of intersections on a mixture of horizontal layers. At least one processor can learn latent relationships between the placements of the visual objects in a three-dimensional space depicted in the image and image semantics. Learning the latent relationships trains the unsupervised machine learning classification model to perform image subject classification through the placements of the visual objects in a new image.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.

Abstract: A stacked wiring structure includes a first wiring substrate and a second wiring substrate. The first wiring substrate includes a first glass substrate, multiple first conductive through vias penetrating through the first glass substrate, and a first multi-layered redistribution wiring structure disposed on the first glass substrate. The second wiring substrate includes a second glass substrate, multiple second conductive through vias penetrating through the second glass substrate, and a second multi-layered redistribution wiring structure disposed on the second glass substrate. The first conductive through vias are electrically connected to the second conductive through vias. The first glass substrate is spaced apart from the second glass substrate. The first multi-layered redistribution wiring structure is spaced apart from the second multi-layered redistribution wiring structure by the first glass substrate and the second glass substrate.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.