Patents by Inventor Wen-Hsiang Chen
Wen-Hsiang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240162308Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.Type: ApplicationFiled: February 9, 2023Publication date: May 16, 2024Inventors: Pin Chun SHEN, Che Chia CHANG, Li-Ying WU, Jen-Hsiang LU, Wen-Chiang HONG, Chun-Wing YEUNG, Ta-Chun LIN, Chun-Sheng LIANG, Shih-Hsun CHANG, Chih-Hao CHANG, Yi-Hsien CHEN
-
Publication number: 20240153860Abstract: An electronic device is provided. The electronic device includes a redistribution structure, an electronic unit and a first conductive pad. The first conductive pad is disposed between the redistribution structure and the electronic unit. The electronic unit is electrically connected to the redistribution structure through the first conductive pad. The first conductive pad has a first coefficient of thermal expansion and a first Young's modulus. The first coefficient of thermal expansion and the first Young's modulus conform to the following formula: 0.7×(0.0069E2?1.1498E+59.661)?CTE?1.3×(0.0069E2?1.1498E+59.661), wherein CTE is the first coefficient of thermal expansion, and E is the first Young's modulus in the formula.Type: ApplicationFiled: December 21, 2022Publication date: May 9, 2024Inventors: Te-Hsun LIN, Wen-Hsiang LIAO, Yung-Feng CHEN, Ming-Hsien SHIH
-
Publication number: 20240145370Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.Type: ApplicationFiled: December 18, 2022Publication date: May 2, 2024Applicant: InnoLux CorporationInventors: Te-Hsun LIN, Wen-Hsiang LIAO, Ming-Hsien SHIH, Yung-Feng CHEN, Cheng-Chi WANG
-
Patent number: 11964409Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.Type: GrantFiled: August 31, 2021Date of Patent: April 23, 2024Assignees: Inventec (Pudong) Technology Corp., Inventec CorporationInventors: Wen-Ching Lin, Ting-Yu Wang, Fa-Chih Ke, Yu-Ling Lin, Wen-Hsiang Chen
-
Patent number: 11963385Abstract: The disclosure provides a local stretch packaging structure, including a substrate, a flexible electronic element, a plurality of light-emitting display elements, and a packaging layer. The flexible electronic element is disposed on the substrate. These light-emitting display elements are disposed on the flexible electronic element. The packaging layer includes a packaging area and a non-packaging area. The packaging area covers the upper surface and sidewalls of these light-emitting display elements. The non-packaging area is directly covered the flexible electronic element that is not disposed with these light-emitting display elements.Type: GrantFiled: October 25, 2021Date of Patent: April 16, 2024Assignees: Interface Technology (ChengDu) Co., Ltd., Interface Optoelectronics (ShenZhen) Co., Ltd., General Interface Solution LimitedInventors: Wen-You Lai, Ping-Hsiang Kao, Po-Lun Chen, Chun-Ta Chen, Po-Ching Lin, Ya-Chu Hsu
-
Patent number: 11961939Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.Type: GrantFiled: June 23, 2022Date of Patent: April 16, 2024Assignee: EPISTAR CORPORATIONInventors: Peng Ren Chen, Yu-Shan Chiu, Wen-Hsiang Lin, Shih-Wei Wang, Chen Ou
-
Publication number: 20240102207Abstract: A temperature-sensing and humidity-controlling fiber includes a hydrophilic material and a temperature-sensing material. The temperature-sensing material has a lower critical solution temperature (LCST) between 31.2° C. and 32.5° C. when a light transmittance thereof is in a range from 3% to 80%, in which a wavelength of the light is between 450 nm and 550 nm.Type: ApplicationFiled: December 6, 2023Publication date: March 28, 2024Inventors: Wen-Jung CHEN, Wei-Hsiang LIN, Chao-Huei LIU
-
Publication number: 20240103377Abstract: A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes forming one or more layers over a silicon substrate with at least one of those layers includes a metal containing layer and removing the metal containing layer by contacting the metal containing layer with the composition of the disclosed and claimed subject matter.Type: ApplicationFiled: October 15, 2020Publication date: March 28, 2024Applicant: Versum Materials US, LLCInventors: CHAO-HSIANG CHEN, CHUNG-YI CHANG, YI-CHIA LEE, WEN DAR LIU
-
Patent number: 11942390Abstract: A device includes a device layer comprising a first transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure includes a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a conductive line electrically connected to the source/drain region of the first transistor through the contact; and a thermal dissipation path thermally connected to the device layer, the thermal dissipation path extending to a surface of the second interconnect structure opposite the device layer. The thermal dissipation path comprises a dummy via.Type: GrantFiled: June 6, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Sheh Huang, Yu-Hsiang Chen, Chii-Ping Chen
-
Publication number: 20240096861Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes first semiconductor die, a second semiconductor die and a memory package. The first semiconductor die and the second semiconductor die are stacked on each other. The first semiconductor die includes a first interface and a third interface. The first interface overlaps and is electrically connected to the second interface arranged on the second semiconductor die. The third interface is arranged on a first edge of the first semiconductor die. The memory package is disposed beside the first semiconductor die, wherein the memory package is electrically connected to the first semiconductor die by the third interface.Type: ApplicationFiled: August 23, 2023Publication date: March 21, 2024Inventors: Che-Hung KUO, Hsiao-Yun CHEN, Wen-Pin CHU, Chun-Hsiang HUANG
-
Publication number: 20240088842Abstract: Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Inventors: Garming LIANG, Simon CHAI, Tzu-Jin YEH, En-Hsiang YEH, Wen-Sheng CHEN
-
Patent number: 11923295Abstract: A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a second dielectric layer on the high resistance layer, a low-k dielectric layer over the second dielectric layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.Type: GrantFiled: June 19, 2020Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hong-Wei Chan, Yung-Shih Cheng, Wen-Sheh Huang, Yu-Hsiang Chen
-
Publication number: 20240073555Abstract: The present disclosure discloses an image processing apparatus having lens color-shading correction mechanism. A first and a second calibration circuits perform lens color-shading correction on an input image according to a first and a second calibration parameters to generate a first and a second calibrated images. A first and a second statistic circuits perform statistic on the first and the second calibrated images to generate a first and a second statistic results.Type: ApplicationFiled: July 20, 2023Publication date: February 29, 2024Inventors: SHENG-KAI CHEN, HUI-CHUN LIEN, WEN-TSUNG HUANG, SHIH-HSIANG YEN, SZU-PO HUANG
-
Publication number: 20240069608Abstract: The present application provides a graphics card expansion device. The graphics card expansion device includes a main chassis and an expansion chassis. The expansion chassis comprises: at least one graphics card storage box, the at least one graphics card storage box is equipped with at least one graphics card; at least one second power source, the at least second power source provides power to at least one graphics card in the at least one graphics card storage box; at least one adapter card, the at least one graphics card storage box communicates with the motherboard in the main box through the at least one adapter card.Type: ApplicationFiled: August 22, 2023Publication date: February 29, 2024Inventors: CHING-JOU CHEN, WEN-HSIANG HUNG, CHUN-BAO GU
-
Patent number: 11739445Abstract: A temperature-responsive material having a structure represented by formula (I): is provided, where in formula (I), X has a structure represented by formula (i) or formula (ii): x and y are in a molar ratio of 9:1 to 1:3, n is an integer of 7 to 120, and m is an integer of 10 to 1,000.Type: GrantFiled: March 31, 2020Date of Patent: August 29, 2023Assignee: Taiwan Textile Research InstituteInventors: Wen-Hsiang Chen, Chun-Hung Lin
-
Publication number: 20220388202Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.Type: ApplicationFiled: August 31, 2021Publication date: December 8, 2022Applicants: Inventec (Pudong) Technology Corp., Inventec CorporationInventors: Wen-Ching Lin, Ting-Yu Wang, Fa-Chih Ke, Yu-Ling Lin, Wen-Hsiang Chen
-
Publication number: 20220026949Abstract: An example support structure for a laptop computer is disclosed. The support structure is extendable and connected to the rear surface of the laptop. The support structure has conduits, a foot assembly, and pairs of magnets. The foot assembly includes a foot section and a connection member. The pair of magnet holds the connection member in a way that the foot remains at a closed or retracted position, and the second pair magnet holds the connection member in a way that the foot remains in an open or extended position. The support structure also has a heat dissipation section under the foot which enhances the heat dissipation property of the laptop when the foot is in the open or extended position.Type: ApplicationFiled: December 14, 2018Publication date: January 27, 2022Inventors: YI-TE LIU, WEN-HSIANG CHEN, HUNG-WEN CHANG
-
Publication number: 20210010165Abstract: A temperature-responsive material having a structure represented by formula (I): is provided, where in formula (I), X has a structure represented by formula (i) or formula (ii): x and y are in a molar ratio of 9:1 to 1:3, n is an integer of 7 to 120, and m is an integer of 10 to 1,000.Type: ApplicationFiled: March 31, 2020Publication date: January 14, 2021Applicant: Taiwan Textile Research InstituteInventors: Wen-Hsiang Chen, Chun-Hung Lin
-
Publication number: 20160376321Abstract: Embodiments of the disclosure concern immunogenic compositions and methods for treating or preventing Severe acute respiratory syndrome (SARS). The compositions and methods concern a portion of the receptor-binding domain (RBD) of the SARS-CoV spike protein. In at least particular cases, a mutated version of a portion of the RBD is utilized, such as a deglycosylated mutant of the RBD.Type: ApplicationFiled: November 21, 2014Publication date: December 29, 2016Applicant: BAYLOR COLLEGE OF MEDICINEInventors: Peter Jay Hotez, Maria Elena Bottazzi, Bin Zhan, Wen-Hsiang Chen, Shivali Chag
-
Publication number: 20150094430Abstract: A dinitro compound I, a diamine compound II and polyimides are provided. The diamine compound II is a reduction product of the dinitro compound I. The polyimides using the diamine compound II as one of the monomers can increase the solubility of the polyimides in various organic solvents and make the color of the polyimides to be transparent and colorless.Type: ApplicationFiled: April 7, 2014Publication date: April 2, 2015Applicant: TAIWAN TEXTILE RESEARCH INSTITUTEInventor: Wen-Hsiang Chen