Patents by Inventor Wen-Hsiang Chen
Wen-Hsiang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220026949Abstract: An example support structure for a laptop computer is disclosed. The support structure is extendable and connected to the rear surface of the laptop. The support structure has conduits, a foot assembly, and pairs of magnets. The foot assembly includes a foot section and a connection member. The pair of magnet holds the connection member in a way that the foot remains at a closed or retracted position, and the second pair magnet holds the connection member in a way that the foot remains in an open or extended position. The support structure also has a heat dissipation section under the foot which enhances the heat dissipation property of the laptop when the foot is in the open or extended position.Type: ApplicationFiled: December 14, 2018Publication date: January 27, 2022Inventors: YI-TE LIU, WEN-HSIANG CHEN, HUNG-WEN CHANG
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Publication number: 20210010165Abstract: A temperature-responsive material having a structure represented by formula (I): is provided, where in formula (I), X has a structure represented by formula (i) or formula (ii): x and y are in a molar ratio of 9:1 to 1:3, n is an integer of 7 to 120, and m is an integer of 10 to 1,000.Type: ApplicationFiled: March 31, 2020Publication date: January 14, 2021Applicant: Taiwan Textile Research InstituteInventors: Wen-Hsiang Chen, Chun-Hung Lin
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Publication number: 20160376321Abstract: Embodiments of the disclosure concern immunogenic compositions and methods for treating or preventing Severe acute respiratory syndrome (SARS). The compositions and methods concern a portion of the receptor-binding domain (RBD) of the SARS-CoV spike protein. In at least particular cases, a mutated version of a portion of the RBD is utilized, such as a deglycosylated mutant of the RBD.Type: ApplicationFiled: November 21, 2014Publication date: December 29, 2016Applicant: BAYLOR COLLEGE OF MEDICINEInventors: Peter Jay Hotez, Maria Elena Bottazzi, Bin Zhan, Wen-Hsiang Chen, Shivali Chag
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Publication number: 20150094430Abstract: A dinitro compound I, a diamine compound II and polyimides are provided. The diamine compound II is a reduction product of the dinitro compound I. The polyimides using the diamine compound II as one of the monomers can increase the solubility of the polyimides in various organic solvents and make the color of the polyimides to be transparent and colorless.Type: ApplicationFiled: April 7, 2014Publication date: April 2, 2015Applicant: TAIWAN TEXTILE RESEARCH INSTITUTEInventor: Wen-Hsiang Chen
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Patent number: 8981038Abstract: A polyimide including a structure shown as Formula II is provided, wherein X is halogen, A1 is selected from one of Formula 1 to Formula 18, and n is from 2 to 500,Type: GrantFiled: December 25, 2012Date of Patent: March 17, 2015Assignee: Taiwan Textile Research InstituteInventors: Der-Jang Liaw, Wen-Hsiang Chen, Ying-Chi Huang, Bo-Cheng Tao
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Publication number: 20140179878Abstract: A polyimide including a structure shown as Formula II is provided, wherein X is halogen, A1 is selected from one of Formula 1 to Formula 18, and n is from 2 to 500,Type: ApplicationFiled: December 25, 2012Publication date: June 26, 2014Applicant: TAIWAN TEXTILE RESEARCH INSTITUTEInventors: Der-Jang Liaw, Wen-Hsiang Chen, Ying-Chi Huang, Bo-Cheng Tao
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Patent number: 8349394Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed, which comprises providing a substrate with a conductive layer formed on the surface of a substrate, conditioning the surface of the substrate, immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioned surface of the substrate, and thermally treating the polymer-protected electrochemical catalyst layer at a temperature approximately below 300° C.Type: GrantFiled: June 18, 2008Date of Patent: January 8, 2013Assignee: Tripod Technology CorporationInventors: Chao Peng, Jo-Lin Lan, Ya-Huei Chang, Wen-Chi Hsu, Hai-Peng Cheng, Shien-Ping Feng, Wen-Hsiang Chen, Tzu-Chien Wei
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Patent number: 8298434Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed. The method includes etching a surface of a substrate, followed by immersing the substrate in a solution containing surfactants to form a conditioner layer on the surface of the substrate, and immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioner layer.Type: GrantFiled: October 29, 2009Date of Patent: October 30, 2012Assignee: Tripod Technology CorporationInventors: Tzu-Chien Wei, Hai-Peng Cheng, Shien-Ping Feng, Jo-Lin Lan, Chao Peng, Wen-Chi Hsu, Ya-Huei Chang, Wen-Hsiang Chen
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Patent number: 8241372Abstract: A method of forming an electrode including an electrochemical catalyst layer is disclosed, which comprises forming a graphitized porous conductive fabric layer, optionally conditioning the graphitized porous conductive fabric layer, and dipping the graphitized porous conductive fabric layer into a solution containing a plurality of polymer-capped noble metal nanoclusters dispersed therein. The polymer-capped noble metal nanoclusters as an electrochemical catalyst layer are adsorbed onto the graphitized porous conductive fabric layer. An electrochemical device with the electrode made thereby is also contemplated.Type: GrantFiled: February 6, 2009Date of Patent: August 14, 2012Assignee: Tripod Technology CorporationInventors: Hai-Peng Cheng, Shien-Ping Feng, Jo-Lin Lan, Chao Peng, Tzu-Chien Wei, Wen-Chi Hsu, Ya-Huei Chang, Wen-Hsiang Chen
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Patent number: 7829403Abstract: A method for fabricating a semiconductor device is provided. A first active region and a second active region are defined in a substrate. An electrode covering the first active region and the second active region is formed on the substrate. A first sacrificial layer is formed on the second active layer. A first work function electrode is formed on the first active layer by performing a first doping process to a portion of the electrode. The first sacrificial layer is removed. A second sacrificial layer is formed on the first active layer.Type: GrantFiled: June 13, 2008Date of Patent: November 9, 2010Assignee: Inotera Memories, Inc.Inventors: Wen-Hsiang Chen, Cheng-Yeh Hsu
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Publication number: 20100108240Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed. The method includes etching a surface of a substrate, followed by immersing the substrate in a solution containing surfactants to form a conditioner layer on the surface of the substrate, and immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioner layer.Type: ApplicationFiled: October 29, 2009Publication date: May 6, 2010Applicant: TRIPOD TECHNOLOGY CORPORATIONInventors: Tzu-Chien WEI, Hai-Peng CHENG, Shien-Ping FENG, Jo-Lin LAN, Chao PENG, Wen-Chi HSU, Ya-Huei CHANG, Wen-Hsiang CHEN
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Patent number: 7709374Abstract: The invention provides a method for fabricating a memory device. At first, a substrate having a plurality of gate electrode stacks and a source/drain region is provided, and a barrier layer and a sacrificial layer are sequentially formed on the substrate and cover the gate electrode stacks. A portion of the sacrificial layer is removed to form a sacrificial plug between the gate electrode stacks, and then a filling layer is formed over the substrate. Next, the sacrificial plug is removed, and a contact hole is formed. A clean step with a solution containing ammonia is carried out. The barrier layer at the bottom of the contact hole is removed, and a metal plug is then formed in the contact hole to electrically contact with the source/drain region.Type: GrantFiled: July 24, 2008Date of Patent: May 4, 2010Assignee: Inotera Memories, Inc.Inventors: Wen-Hsiang Chen, Hsin-Yu Hsiao
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Publication number: 20100101623Abstract: A packaging structure with a box for containing at least a portable electronic device is provided. The box has plates, which are connected to one another and surrounded to form an opening for the portable electronic device passing through, and a lid selectively covering or exposing the opening. First solar cells each fastened on an inner surface of each plate in the box. At least a cable electrically connects the first solar cells and is operated for electrically connecting the portable electronic device.Type: ApplicationFiled: March 10, 2009Publication date: April 29, 2010Applicant: TRIPOD TECHNOLOGY CORPORATIONInventors: Tzu-Chien WEI, Chao PENG, Jo-Lin LAN, Ya-Huei CHANG, Wen-Chi HSU, Hai-Peng CHENG, Shien-Ping FENG, Wen-Hsiang CHEN
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Publication number: 20100101644Abstract: Disclosed herein is a dye-sensitized solar cell. The dye-sensitized solar cell includes a semiconductor electrode with a dye adsorbed thereon; a counter electrode; and an electrolyte composition provided between the semiconductor electrode and the counter electrode; wherein the electrolyte composition comprises an oxidation-reduction mediator and a eutectic ionic liquid including a choline halide or derivatives thereof mixed with alcohols or urea.Type: ApplicationFiled: October 23, 2009Publication date: April 29, 2010Applicant: TRIPOD TECHNOLOGY CORPORATIONInventors: Huei-Ru JHONG, Hai-Peng CHENG, Shien-Ping FENG, Jo-Lin LAN, Chao PENG, Tzu-Chien WEI, Wen-Chi HSU, Ya-Huei CHANG, Wen-Hsiang CHEN
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Publication number: 20100071839Abstract: A method of forming an electrode including an electrochemical catalyst layer is disclosed, which comprises forming a graphitized porous conductive fabric layer, optionally conditioning the graphitized porous conductive fabric layer, and dipping the graphitized porous conductive fabric layer into a solution containing a plurality of polymer-capped noble metal nanoclusters dispersed therein. The polymer-capped noble metal nanoclusters as an electrochemical catalyst layer are adsorbed onto the graphitized porous conductive fabric layer. An electrochemical device with the electrode made thereby is also contemplated.Type: ApplicationFiled: February 6, 2009Publication date: March 25, 2010Applicant: TRIPOD TECHNOLOGY CORPORATIONInventors: Hai-Peng CHENG, Shien-Ping FENG, Jo-Lin LAN, Chao PENG, Tzu-Chien WEI, Wen-Chi HSU, Ya-Huei CHANG, Wen-Hsiang CHEN
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Publication number: 20100071759Abstract: A method of forming an electrode including an electrochemical catalyst layer is disclosed, which comprises forming a graphitized porous conductive fabric layer, optionally conditioning the graphitized porous conductive fabric layer, and dipping the graphitized porous conductive fabric layer into a solution containing polymer-capped noble metal nanoclusters dispersed therein. The polymer-capped noble metal nanoclusters as an electrochemical catalyst layer are adsorbed onto the graphitized porous conductive fabric layer. An electrochemical device with the electrode made thereby is also contemplated.Type: ApplicationFiled: February 10, 2009Publication date: March 25, 2010Applicant: TRIPOD TECHNOLOGY CORPORATIONInventors: Hai-Peng CHENG, Shien-Ping FENG, Jo-Lin LAN, Chao PENG, Tzu-Chien WEI, Wen-Chi HSU, Ya-Huei CHANG, Wen-Hsiang CHEN
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Publication number: 20090263569Abstract: A method of forming an electrode having an electrochemical catalyst layer is disclosed, which comprises providing a substrate with a conductive layer formed on the surface of a substrate, conditioning the surface of the substrate, immersing the substrate in a solution containing polymer-capped noble metal nanoclusters dispersed therein to form a polymer-protected electrochemical catalyst layer on the conditioned surface of the substrate, and thermally treating the polymer-protected electrochemical catalyst layer at a temperature approximately below 300° C.Type: ApplicationFiled: June 18, 2008Publication date: October 22, 2009Inventors: Chao Peng, Jo-Lin Lan, Ya-Huei Chang, Wen-Chi Hsu, Hai-Peng Cheng, Shien-Ping Feng, Wen-Hsiang Chen, Tzu-Chien Wei
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Patent number: 7595981Abstract: A notebook computer includes a housing, a CPU, a memory, a display, a storage device, a detachable battery pack and a keyboard module. The notebook computer is characterized in that the housing includes a predefined space and a connection interface disposed in the predefined space. The connection interface is electrically connected to the CPU. The notebook computer includes a plurality of electronic device modules. Each electronic device module includes a casing portion and a main body portion, and the main body portion includes a transmission interface. The size of each electronic device module may correspond to the size of the predefined space. Each electronic device module may be secured in the predefined space for combination with the housing, and the transmission interface is electrically connected to the connection interface for power or data transmission. The plurality of electronic device modules are capable of combining individually with the housing for replacing different functions.Type: GrantFiled: May 20, 2008Date of Patent: September 29, 2009Assignee: First International Computer Inc.Inventors: Wen-Hsiang Chen, Chuan-Yu Hsu, Ming-Wang Lin, Wen-Hsing Chen, Hung-Wen Hsu, Lin-Hsiang Hsieh, Wei-Te Huang
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Publication number: 20090209100Abstract: The invention provides a method for fabricating a memory device. At first, a substrate having a plurality of gate electrode stacks and a source/drain region is provided, and a barrier layer and a sacrificial layer are sequentially formed on the substrate and cover the gate electrode stacks. A portion of the sacrificial layer is removed to form a sacrificial plug between the gate electrode stacks, and then a filling layer is formed over the substrate. Next, the sacrificial plug is removed, and a contact hole is formed. A clean step with a solution containing ammonia is carried out. The barrier layer at the bottom of the contact hole is removed, and a metal plug is then formed in the contact hole to electrically contact with the source/drain region.Type: ApplicationFiled: July 24, 2008Publication date: August 20, 2009Applicant: INOTERA MEMORIES, INC.Inventors: Wen-Hsiang Chen, Hsin-Yu Hsiao
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Publication number: 20090137090Abstract: A method for fabricating a semiconductor device is provided. A first active region and a second active region are defined in a substrate. An electrode covering the first active region and the second active region is formed on the substrate. A first sacrificial layer is formed on the second active layer. A first work function electrode is formed on the first active layer by performing a first doping process to a portion of the electrode. The first sacrificial layer is removed. A second sacrificial layer is formed on the first active layer.Type: ApplicationFiled: June 13, 2008Publication date: May 28, 2009Applicant: INOTERA MEMORIES, INC.Inventors: Wen-Hsiang Chen, Cheng-Yeh Hsu