Abstract: A method for forming semiconductor device package comprises providing a substrate with via contact pads and via through holes through said substrate, terminal pads on a bottom surface of said substrate and an exposed type through hole through said substrate. A die is provided with bonding pads thereon and an exposed type pad on a bottom surface of said die. A reflective layer is formed on an upper surface of the substrate. The die is adhered on the substrate. A dry film is formed on a top of the die as a slanting structure. A re-distribution layer conductive trace is formed by sputtering and E-plating on an upper surface of the slanting structure.

Abstract: The invention proposes a semiconductor device package structure, comprising a substrate, an adhesive layer and a die. The substrate has electrical through-holes to inter-connect a first and second wiring circuit on a top surface and a bottom surface of the substrate respectively, wherein a contact conductive bump is formed on the first wiring circuit. The under-fill adhesive layer is formed on the top surface and the first wiring circuit of the substrate except the area of the die. The die has a bump structure on the bonding pads of the die, wherein the bump structure of the die is electrically connected to the contact conductive bump of the first wiring circuit of the substrate.

Abstract: The invention proposes a semiconductor device package structure, comprising a substrate, an adhesive layer and a die. The substrate has electrical through-holes to inter-connect a first and second wiring circuit on a top surface and a bottom surface of the substrate respectively, wherein a contact conductive bump is formed on the first wiring circuit. The under-fill adhesive layer is formed on the top surface and the first wiring circuit of the substrate except the area of the die. The die has a bump structure on the bonding pads of the die, wherein the bump structure of the die is electrically connected to the contact conductive bump of the first wiring circuit of the substrate.

Abstract: The invention proposes a semiconductor device package structure, comprising a substrate, an adhesive layer and a die. The substrate has electrical through-holes to inter-connect a first and second wiring circuit on a top surface and a bottom surface of the substrate respectively, wherein a contact conductive bump is formed on the first wiring circuit. The under-fill adhesive layer is formed on the top surface and the first wiring circuit of the substrate except the area of the die. The die has a bump structure on the bonding pads of the die, wherein the bump structure of the die is electrically connected to the contact conductive bump of the first wiring circuit of the substrate.

Abstract: A method of LED package includes: forming a P-type through-hole and a N-type through-hole through a substrate; forming a conductive material on the sidewall of said P-type through-hole and N-type through-hole; forming a reflective layer on an upper surface of said substrate; aligning a P-type pad and a N-type pad with said P-type through-hole and said N-type through-hole, respectively, said P-type pad and N-type pad being formed on a first surface of a LED die, wherein said LED die is formed on said upper surface of said substrate; forming electrical connection from said P-type pad and said N-type pad by a copper refilling material within said P-type through-hole and said N-type through-hole; and a P-type terminal pad which positioned under said substrate electrically coupled to said P-type pad via said copper refilling material within said P-type through-hole, and a N-type terminal pad which positioned under said substrate electrically coupled to said N-type pad via said copper refilling material within said

Abstract: A method for forming semiconductor device package comprises providing a substrate with via contact pads and via through holes through said substrate, terminal pads on a bottom surface of said substrate and an exposed type through hole through said substrate. A die is provided with bonding pads thereon and an exposed type pad on a bottom surface of said die. A reflective layer is formed on an upper surface of the substrate. The die is adhered on the substrate. A dry film is formed on a top of the die as a slanting structure. A re-distribution layer conductive trace is formed by sputtering and E-plating on an upper surface of the slanting structure.

Abstract: A method for forming LED package comprises providing a substrate with a first conductive type through-hole and a second conductive type through-hole through the substrate. A reflective layer is formed on an upper surface of the substrate. A LED die is provided with a first conductive type pad and a second conductive type pad formed on a lower surface and an upper surface of the LED die, respectively. The LED die is adhered on the substrate. A slanting structure of dielectric layer is formed adjacent at least one side of the LED die for carrying conductive traces. A re-distribution layer conductive trace is formed on upper surface of the slanting structure to offer path between the second conductive type pad and the conductive type through-hole.

Abstract: A method of LED package includes: forming a P-type through-hole and a N-type through-hole through a substrate; forming a conductive material on the sidewall of said P-type through-hole and N-type through-hole; forming a reflective layer on an upper surface of said substrate; aligning a P-type pad and a N-type pad with said P-type through-hole and said N-type through-hole, respectively, said P-type pad and N-type pad being formed on a first surface of a LED die, wherein said LED die is formed on said upper surface of said substrate; forming electrical connection from said P-type pad and said N-type pad by a copper refilling material within said P-type through-hole and said N-type through-hole; and a P-type terminal pad which positioned under said substrate electrically coupled to said P-type pad via said copper refilling material within said P-type through-hole, and a N-type terminal pad which positioned under said substrate electrically coupled to said N-type pad via said copper refilling material within said

Abstract: LED package includes a substrate with pre-formed P-type through-hole and N-type through-hole through said substrate, wherein a conductive material formed on the sidewall of said P-type through-hole and N-type through-hole; a reflective layer formed on an upper surface of said substrate; a LED die having P-type pad and N-type pad aligned with said P-type through-hole and said N-type through-hole; said P-type pad and N-type pad being formed on a first surface of said LED die; wherein said LED die is formed on said upper surface of said substrate; a copper refilling material within said P-type through-hole and said N-type through-hole thereby forming electrical connection from said P-type pad and said N-type pad; and a P-type terminal pad under said substrate and electrical coupled to said P-type pad through said copper refilling material within said P-type through-hole, a N-type terminal pad under said substrate and electrical coupled to said N-type pad through said copper refilling material within said N-type

Abstract: A semiconductor device package structure includes a substrate with a via contact pad on top surface of the substrate, a terminal pad on bottom surface of the substrate and a conductive through hole through the substrate, wherein the conductive through hole electrically couples the via contact pad and the terminal pad on the substrate; a die having bonding pads thereon, wherein the die is formed on the top surface of the substrate; a slanting structure formed adjacent to at least one side of the die for carrying conductive traces; and a conductive trace formed on upper surface of the slanting structure to offer path between the bonding pads and the via contact pad.

Abstract: The LED package comprises a substrate with a first conductive type through-hole and a second conductive type through-hole through the substrate; a reflective layer formed on an upper surface of the substrate; a LED die having first conductive type pad and second conductive type pad, wherein the first conductive type pad is aligned with the first conductive type through-hole; a slanting structure of dielectric layer formed adjacent at least one side of the LED die for carrying conductive traces; a conductive trace formed on upper surface of the slanting structure to offer path between the second conductive type pad and the conductive type through-hole; and a refilling material within the first conductive type through-hole and second conductive type through-hole.

Abstract: LED package includes a substrate with pre-formed P-type through-hole and N-type through-hole through the substrate; a reflective layer formed on an upper surface of the substrate; a LED die having P-type pad and N-type pad aligned with the P-type through-hole and the N-type through-hole; wherein the LED die is formed on the upper surface of the substrate; a refilling material within the P-type through-hole and the N-type through-hole thereby forming electrical connection from the P-type pad and the N-type pad; and a lens formed over the upper surface of the substrate.

Abstract: The present invention discloses a semiconductor device package and the method for the same. The method includes preparing a first substrate and a second substrate; opening a die opening window through the second substrate by using laser or punching; preparing an adhesion material; attaching the first substrate to the second substrate by the adhesion material; aligning a die by using the aligning mark of the die metal pad and attaching the die onto the die metal pad with force by the adhesion material; forming a first dielectric layer on top surfaces of the second substrate and the die and pushing the first dielectric layer into gap between the side wall of the die and the side wall of the die opening window under vacuum condition; opening a plurality of via openings in the first dielectric layer; and forming a redistribution layer in the plurality of via openings and on the first dielectric layer.

Abstract: The present invention comprises a first substrate with a die formed on a die metal pad, a first and a second wiring circuits formed on the surfaces of the first substrate. A second substrate has a die opening window for receiving the die, a third wiring circuit is formed on top surface of the second substrate and a fourth wiring circuit on bottom surface of the second substrate. An adhesive material is filled into the gap between back side of the die and top surface of the first substrate and between the side wall of the die and the side wall of the die receiving through hole and the bottom side of the second substrate. During the formation, laser is introduced to cut the backside of the first substrate and an opening hole is formed in the first substrate to expose a part of the backside of the Au or Au/Ag metal layer of chip/die.

Abstract: The present invention provides a LED chip structure. The LED chip structure comprises a substrate and an N type layer disposed on the substrate; a P type layer disposed on the N type layer; a N type contact pad and a P type contact pad disposed below the substrate; conductive through holes disposed through the substrate to electrically connect the N type layer to the N type contact pad and the P type layer to the conduct heat generated by the P type layer and the N type layer downward.

Abstract: The semiconductor device package structure includes a first die with a through silicon via (TSV) open from back side of the first die to expose bonding pads; a build up layer coupled between the bonding pads to terminal metal pads by the through silicon via (TSV); a substrate with a second die embedded inside and top circuit wiring and bottom circuit wiring on top and bottom side of the substrate respectively; and a conductive through hole structure coupled between the terminal metal pads to the top circuit wiring and the bottom circuit wiring.

Abstract: The present invention discloses a structure of device package comprising a first substrate with a die metal pad, a first wiring circuit on top surface of said first substrate and a second wiring circuit on bottom surface of said first substrate. A die is disposed on the die metal pad. A second substrate has a die opening window for receiving the die, a third wiring circuit on top surface of the second substrate and a fourth wiring circuit on bottom surface of the second substrate. An adhesive material is filled into the gap between back side of the die and top surface of the first substrate and between the side wall of the die and the side wall of the die receiving through hole and the bottom side of the second substrate.

Abstract: The image sensor package with dual substrates comprises a first substrate with a die receiving opening and a plurality of first through hole penetrated through the first substrate; a second substrate with a die opening window and a plurality of second through hole penetrated through the second substrate, formed on the first substrate. A part of the second wiring pattern is coupled to a part of the third wiring pattern; an image die having conductive pads and sensing array received within the die receiving opening and the sensing array being exposed by the die opening window; and a through hole conductive material refilled into the plurality of second through hole, some of the plurality of second through hole coupling to the conductive pads of the image sensor.

Abstract: The present invention provides a LED chip structure. The LED chip structure comprises a substrate and an N type layer disposed on the substrate; a P type layer disposed on the N type layer; a N type contact pad and a P type contact pad disposed below the substrate; conductive through holes disposed through the substrate to electrically connect the N type layer to the N type contact pad and the P type layer to the conduct heat generated by the P type layer and the N type layer downward.

Abstract: The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die disposed within the die receiving through hole; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.