Abstract: Gate spacer that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a gate stack disposed over a semiconductor layer and a gate spacer disposed on a sidewall of the gate stack. A source/drain feature is disposed in the semiconductor layer and adjacent the gate spacer. A low-k contact etch stop layer is disposed on a top surface and a sidewall of the gate spacer and a portion of the gate spacer is disposed between the low-k contact etch stop layer and the semiconductor layer. A source/drain contact is disposed on the source/drain feature and adjacent the low-k contact etch stop layer.

Abstract: An aquatic liposome encapsulating a natural compound is provided, wherein an average particle size (a median particle size) of the aquatic liposome encapsulating the natural compound ranges from 80 nm to 200 nm. A manufacturing method of an aquatic liposome encapsulating a natural compound is provided and includes performing an ultrasonic oscillation after mixing the aquatic liposome and the natural compound, so that the natural compound is encapsulated in the aquatic liposome. Experiments are conducted to prove that the aquatic liposome encapsulating the natural compound could effectively enter microglia and retinal pigment epithelium cells to relieve the inflammatory response and hinder the apoptosis.

Abstract: A method for generating a tree diagram from a capitalization table of a company includes: generating a plurality of interactive icons that are associated with the company and partial owners of the company for the tree diagram, wherein the interactive icons include a root node icon that is associated with the company, and a plurality of stem node icons each associated with a respective one of partial owners; arranging the root node icon and the plurality of stem node icons in the tree diagram by determining an importance value determined for each of the stem node icons, and by arranging each of the stem node icons to have a distance from the root node icon that is inversely related to the importance value of the stem node icon; and plotting a plurality of investment routes, each connecting two of the interactive icons arranged in the tree diagram.

Abstract: Disclosed herein is a method of treating a tumor in a subject. The method comprises administering to the subject a molecular construct, which comprises an anti-CD38 antibody, and a plurality of lenalidomide molecules or hydrolyzed lenalidomide molecules linked to the anti-CD38 antibody. According to some embodiments of the present disclosure, the administration of the molecular construct gives rise to an effective amount of the lenalidomide molecules or the hydrolyzed lenalidomide molecules that is at least 1,000 times less than an effective amount of the lenalidomide molecule used alone or in combination with the anti-CD38 antibody for the treatment of the tumor.

Abstract: A method for recommending parking is provided. The method obtains vehicle information of a vehicle. Where the vehicle information is provided with a price and a license plate number. The method further determines whether a member of a mall corresponding to the vehicle has a consumption record of the mall according to the license plate member of the vehicle. The method further determines historical consumption areas according to the consumption record of the mall if yes, and determines a target parking space of the vehicle according to the historical consumption areas. The method further determines target shops of the mall according to the price of the vehicle if not, and determines the target parking space according to an area where the target shops of the mall are located. The method further recommends the target parking space to the vehicle. An electronic device and a non-transitory storage medium are also disclosed.

Abstract: A semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active structure. The active structure includes a first well set, a second well set and a plurality of barriers. The first well set is disposed on the first semiconductor structure and includes one or multiple first wells. The second well set is disposed between the first well set and the second semiconductor structure and includes one or multiple second wells. The plurality of barriers is arranged alternately with the one or multiple first wells and the one or multiple second wells. The first well has a first thickness. The second well has a second thickness different from the first thickness. The one or multiple first wells and the one or multiple second wells include AlxInyGa1?x?yN respectively, wherein 0?x?1, 0?y?1, 0?1?x?y<1.

Abstract: A method of fabricating a device includes providing a fin extending from a substrate in a device type region, where the fin includes a plurality of semiconductor channel layers. In some embodiments, the method further includes forming a gate structure over the fin. Thereafter, in some examples, the method includes removing a portion of the plurality of semiconductor channel layers within a source/drain region adjacent to the gate structure to form a trench in the source/drain region. In some cases, the method further includes after forming the trench, depositing an adhesion layer within the source/drain region along a sidewall surface of the trench. In various embodiments, and after depositing the adhesion layer, the method further includes epitaxially growing a continuous first source/drain layer over the adhesion layer along the sidewall surface of the trench.

Abstract: A method for making a semiconductor device includes forming a fin structure that extends along a first direction and comprises a plurality of sacrificial layers and a plurality of channel layers alternately stacked on top of one another, forming a dummy gate structure over the fin structure and extending along a second direction perpendicular to the first direction, and forming a gate spacer. The gate spacer extends in the second direction along respective upper sidewall portions of the dummy gate structure and is separated by a portion of the dummy gate structure from a topmost one of the plurality of channel layers, such that a first distance between a bottom surface of the gate spacer and a top surface of the topmost one of the plurality of channel layers is defined by the portion of the dummy gate structure.

Abstract: The present disclosure relates to an anti-fatigue Lactobacillus composition. The anti-fatigue Lactobacillus composition, which includes at least one of Lactobacillus brevis GKEX, Lactobacillus plantarum GKK1 and Lactobacillus johnsonii GKJ2 as an active ingredient, administered to a healthy subject for a continuous period of time, can significantly improve fatigue-related biochemical indices and prolong aerobic exercise time to exhaustion, and thus can be used as an active ingredient for preparation of various compositions for anti-fatigue and/or improving athletic ability.

Abstract: A semiconductor device includes a substrate having a medium-voltage (MV) region and a logic region, a gate structure on the MV region, a first single diffusion break (SDB) structure and a second SDB structure in the substrate directly under the gate structure, and a source/drain region adjacent to two sides of the gate structure. Preferably, top surfaces of the first SDB structure and the second SDB structure are coplanar, bottom surfaces of the first SDB structure and the second SDB structure are coplanar, and the first SDB structure and the second SDB structure are made of same material.

Abstract: A semiconductor device may be formed by forming a first fin and a second fin in a first area and a second area of a substrate, respectively; which may be followed by forming of a first dummy gate structure and a second dummy gate structure straddling the first fin and second fin, respectively and forming a sacrificial layer extending along a bottom portion of the second dummy gate structure. The first dummy gate structure may be replaced with a first metal gate structure, while the second dummy gate structure and the sacrificial layer may be replaced with a second metal gate structure.

Abstract: A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit is configured to generate a clock signal and adjust a clock frequency of the clock signal according to a control voltage. The processor circuit is coupled to the oscillator circuit and is configured to generate the control voltage. The processor circuit reads a frequency aging rate value and a control voltage slope of the oscillator circuit from the oscillator circuit, calculates a control voltage regulation rate value corresponding to the frequency aging rate value and the control voltage slope, and compensates the control voltage based on the control voltage regulation rate value. Alternatively, the processor circuit reads the control voltage regulation rate value from the oscillator circuit, and compensates the control voltage based on the control voltage regulation rate value.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A light source module includes a light-emitting device, a light guide pipe, a wave plate, and a polarizer. The light-emitting device emits a beam. The light guide pipe includes a recessed curved surface, an output surface, a first convex surface, and a second convex surface. The recessed curved surface faces the light-emitting device. The output surface is opposite to the recessed curved surface. The first convex surface connects the recessed curved surface with the output surface. The second convex surface connects the recessed curved surface with the output surface and is opposite to the first convex surface, wherein the beam enters the light guide pipe through the recessed curved surface, and leaves the light guide pipe through the output surface. The wave plate is disposed on a path of the beam from the output surface. The polarizer is disposed on a path of the beam from the wave plate.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a lower electrode disposed within a dielectric structure over a substrate. A ferroelectric data storage structure is disposed over the lower electrode and an upper electrode is disposed over the ferroelectric data storage structure. One or more stressed sidewall spacers are arranged on opposing sides of the upper electrode. The ferroelectric data storage structure has an orthorhombic phase concentration that varies from directly below the one or more stressed sidewall spacers to laterally outside of the one or more stressed sidewall spacers.

Abstract: A data processing system includes a computing subsystem and a memory subsystem. In the computing subsystem, a processor is connected to one end of a high-speed parallel bus via a first bus interface. The processor transmits data to the memory subsystem and receives data transmitted through the high-speed parallel bus. The memory subsystem receives and transmits data to the computing subsystem through the high-speed parallel bus.

Abstract: An electronic device includes: a circuit substrate; a first substrate overlapped with the circuit substrate; a first electronic unit attached on the first substrate; a second substrate disposed between the first substrate and the circuit substrate; a first transistor attached on the second substrate and electrically connected to the first electronic unit; and a first conductive element penetrating the second substrate, wherein the first transistor is electrically connected to the circuit substrate through the first conductive element.

Abstract: A method includes forming a redistribution structure over a carrier, the redistribution structure having conductive features on a surface of the redistribution structure distal the carrier; forming a conductive pillar over the surface of the redistribution structure; attaching a die to the surface of the redistribution structure adjacent to the conductive pillar, where die connectors of the die are electrically coupled to the conductive features of the redistribution structure; and attaching a pre-made substrate to the conductive pillar through a conductive joint, where the conductive joint is on the conductive pillar and comprises a different material from the conductive pillar, where the conductive joint and the conductive pillar electrically couple the redistribution structure to the pre-made substrate.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming first and second semiconductor fins in first and second regions of a substrate, respectively; forming first and second dummy gate stacks over the first and second semiconductor fins, respectively, and forming a spacer layer over the first and the second dummy gate stacks; forming a first pattern layer with a thickness along the spacer layer in the first region; form a first source/drain (S/D) trench along the first pattern layer and epitaxially growing a first epitaxial feature therein; removing the first pattern layer to expose the spacer layer; forming a second pattern layer with a different thickness along the spacer layer in the second region; form a second S/D trench along the second pattern layer and epitaxially growing a second epitaxial feature therein; and removing the second pattern layer to expose the spacer layer.

Abstract: A device includes a first semiconductor strip and a second semiconductor strip extending longitudinally in a first direction, where the first semiconductor strip and the second semiconductor strip are spaced apart from each other in a second direction. The device also includes a power supply line located between the first semiconductor strip and the second semiconductor strip. A top surface of the power supply line is recessed in comparison to a top surface of the first semiconductor strip. A source feature is disposed on a source region of the first semiconductor strip, and a source contact electrically couples the source feature to the power supply line. The source contact includes a lateral portion contacting a top surface of the source feature, and a vertical portion extending along a sidewall of the source feature towards the power supply line to physically contact the power supply line.