Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.

Abstract: A method for managing a memory buffer, a memory control circuit unit, and a memory storage apparatus are provided. The method includes the following steps. Multiple consecutive first commands are received from a host system. A command ratio of read command among the first commands is calculated. The memory storage apparatus is being configured in a first mode or a second mode according to the command ratio and a ratio threshold. A first buffer is configured in a buffer memory to temporarily store a logical-to-physical address mapping table in response to the memory storage device being configured in the first mode, in which the first buffer has a first capacity. A second buffer is configured in the buffer memory in response to the memory storage device being configured in the second mode, in which the second buffer has a second capacity, which is greater than the first capacity.

Abstract: A projection apparatus including a liquid crystal on silicon panel and a processor is provided. The liquid crystal on silicon panel is configured to display a plurality of phase images. The phase images include a first phase image and a second phase image. The processor is coupled to the liquid crystal on silicon panel. The processor is configured to generate and output the phase images to drive the liquid crystal on silicon panel to display the phase images. The processor generates the first phase image according to a first phase information, and the processor generates the second phase image according to the first phase image.

Abstract: An example device is to monitor communications throughput rates and select modulation and coding protocols in order to minimize specific absorption rates experienced by users of the devices by minimizing or reducing transmission power settings.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: Methods for fabricating semiconductor structures are provided. An exemplary method includes forming a first transistor structure and a second transistor structure over a substrate, wherein each transistor structure includes at least one nanosheet. The method further includes depositing a metal over each transistor structure and around each nanosheet; depositing a coating over the metal; depositing a mask over the coating; and patterning the mask to define a patterned mask, wherein the patterned mask lies over a masked portion of the coating and the second transistor structure, and wherein the patterned mask does not lie over an unmasked portion of the coating and the first transistor structure. The method further includes etching the unmasked portion of the coating and the metal over the first transistor structure using a dry etching process with a process pressure of from 30 to 60 (mTorr).

Abstract: A normally closed disc clamp system includes a housing with a rotating disc, a brake ring and a pressure-enhancing ring arranged therein. When only a first chamber is supplied with fluid, the fluid pushes the brake ring to release the rotating disc. When only a second chamber is fed with fluid, the fluid pushes the brake ring to keep the rotating disc in the braking state, and pushes the pressure-enhancing ring to compress an elastic unit. The energy generated by the compression of the elastic unit acts on the brake ring through the fluid, so that the brake ring achieves a double pressurization effect. If the action of the fluid fails, the brake ring can still provide a braking effect to the rotating disc through the elastic unit to improve operational safety. Further, the present invention further provides a rotating table using the normally closed disc clamp system.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A semiconductor device includes a first stack structure, a second stack structure, and a third stack structure. Each of the stack structure includes semiconductor layers vertically spaced from one another. The first, second, and third stack structures all extend along a first lateral direction. The second stack structure is disposed between the first and third stack structures. The semiconductor device includes a first gate structure that extends along a second lateral direction and wraps around each of the semiconductor layers. The semiconductor layers of the first stack structure are coupled with respective source/drain structures. The semiconductor layers of the second stack structure are coupled with respective source/drain structures. The semiconductor layers of the third stack structure are coupled with a dielectric passivation layer.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A projection device including a casing, a light source module, an optical engine module and a projection lens is provided. A front cover, a rear cover, a first side cover, a second side cover, an upper cover and a lower cover of the casing surround an accommodating space. The light source module includes a first and a second light sources, and a first and a second light source heat dissipation modules. The lower cover has a first, a second and a third air inlets. The first and the second side covers respectively have a first and a second air outlets. The first and the second light source heat dissipation modules are correspondingly disposed above the first air inlet and correspond to the first air outlet. The second and the third air inlets are respectively disposed below two sides of the projection lens and adjacent to the front cover.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: Techniques for EVPN Host Routed Bridging (HRB) and EVPN cloud-native data center with Host Routed Bridging (HRB) are described. A host computing device of a data center includes one or more containerized user-level applications. A cloud native virtual router is configured for dynamic deployment by the data center application orchestration engine and operable in a user space of the host computing device. Processing circuitry is configured for execution of the containerized user-level applications and the cloud native virtual router. The cloud native virtual router comprises a containerized routing protocol process configured to operate as a control plane, and a data plane for the containerized router. The data plane is configured to operate an ethernet virtual private network (EVPN) encapsulation/decapsulation data path of an overlay network for communicating layer two (L2) network traffic of the containerized user applications over a switch fabric of the data center.

Abstract: The present disclosure provides an audio compression device, an audio compressing system and an audio compression method. The audio compression device comprises a first transceiver and a first processor. The first transceiver is connected to the first processor. The processor obtains an audio signal and an available bandwidth, and the processor performs an audio compression encoding on the audio signal to obtain a sample audio signal, and then compares with the audio signal and the sample audio signal to generate a residual signal, and the residual signal is transmitted according to the available bandwidth. The audio signal can be completely transmitted to an audio decompression device to reduce the distortion of the audio signal.

Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.