Abstract: A polymer of fluorine-containing sulfonated poly(arylene ether)s and a manufacturing method thereof are provided. The polymer is formed by processing a nucleophilic polycondensation between a fluorine-containing monomer having an electron-withdrawing group and a multi-phenyl monomer. A main structure of the polymer of fluorine-containing sulfonated poly(arylene ether)s has a first portion with fluoro or trifluoromethyl substituted phenyl groups, and a second portion with sulfonated phenyl groups.

Abstract: A drive shaft assembly comprising a first shaft and a second shaft is disclosed. The second shaft is axially translatable from an engaged configuration with the first shaft at one limit of its travel to a disengaged configuration from the first shaft at the opposite limit of its travel. Engagement of the first and second shafts is via cooperating helical splines provided thereon. The helical splines give rise to a disengaging axial force on the second shaft in a fault condition in which a driving torque is applied from one of the first and second shafts to the helical splines in a rotational direction tending to unscrew the helical splines. Consequently when the second shaft is in the engaged configuration the disengaging axial force translates the second shaft to the disengaged configuration.

Abstract: A method includes recording a wafer ID and a location ID of a device die in a database, and bonding the device die over a package substrate, wherein the device die and the package substrate are disposed in a package. A package ID is on the package. A mapping is established to link the wafer ID and the location ID of the device die to the package ID.

Abstract: A search engine receives a search trigger for a task. In response to identifying data that is responsive to the search trigger, a notification of the identified data is sent to the task, to cause the task to process the identified data. The search engine receives a notification of result data produced by the task based on the processing of the identified data.

Abstract: A method for effectively transmitting data, in which a switch is connected between a plurality host and storage, comprises steps of the following. First, the hosts recognize the storages via the switch, and revise a data transmission path within an original command, meanwhile transforming it into a specific command. Later, the switch receives the specific command, alternatively revises the data transmission path or not, and transforms the specific command into a standard command. The standard command is then transmitted to the storage. After receiving it, the storage is able to search for a corresponding host based on the data transmission path such that data is simply transmitted between the storage and its corresponding host. By employing the proposed method, the present invention is beneficial to reducing system complexity and raising data transmission efficiency.

Abstract: The present invention relates to a use of mycophenolate mofetil or a pharmaceutically acceptable salt thereof in the manufacture of a medicament against influenza virus. The present invention also relates to a use of mycophenolate mofetil or a pharmaceutically acceptable salt thereof in the manufacture of a medicament against drug-resistant influenza virus strains. The present invention is further related to a method for treating influenza in a subject, comprising administering to said subject an effective amount of mycophenolate mofetil or a pharmaceutically acceptable salt thereof.

Abstract: Some embodiments of the present disclosure relate to deceasing off-state leakage current within a metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET includes source and drain regions. The source and drain regions are separated by a channel region. A gate is arranged over the channel region. The gate has a first gate region adjacent to the source region and a second gate region adjacent to the drain region. The first gate region is selectively doped adjacent the source region. The second gate region is undoped or lightly-doped. The undoped or lightly-doped second gate region reduces the electric field between the gate and the drain region, and hence reduces a gate induced drain leakage (GIDL) current between the gate and drain region. The undoped or lightly-doped region of the gate can reduce the GIDL current within the MOSFET by about three orders of magnitude. Other embodiments are also disclosed.

Abstract: A method of forming a device includes forming a buried well region of a first dopant type in a substrate. A well region of the first dopant type is formed over the buried well region. A first well region of a second dopant type is formed between the well region of the first dopant type and the buried well region of the first dopant type. A second well region of the second dopant type is formed in the well region of the first dopant type. An isolation structure is formed at least partially in the well region of the first dopant type. A first gate electrode is formed over the isolation structure and the second well region of the second dopant type.

Abstract: Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities.

Abstract: Synthetic healthcare data generation can include receiving an indication of a particular quantity of people, receiving an indication of a particular quantity of time periods, assigning a respective set of characteristics to each of the people based on a statistical model, simulating a respective path for each of the people through a set of clinical practice guidelines over the specified time periods, wherein each path is determined based on the respective set of characteristics, determining a probability associated with a progression of a medical condition for each of the people at the end of each time period, and generating a synthetic data set for each of the people based on the simulated paths and the determined probabilities.

Abstract: A polymer of sulfonated poly(arylene ether)s (PAEs) and a manufacturing method thereof are provided. A main structure of the PAEs has a first side formed by multi-phenyl glycol monomer and a second side formed by multi-phenyl dihalo monomer with an electron-withdrawing group. The glycol monomer and the dihalo monomer are reacted with each other by a nucleophilic displacement reaction, so as to form the main structure of the PAEs. A film made of the PAEs has a better size stability under a high water uptake.

Abstract: A display screen assembly is provided. The display screen defines a channel for allowing selective engagement of the display screen. A mount assembly is provided and includes a base for supporting the display screen assembly about a support surface, and a locking assembly that selectively engages the channel to thereby lock the mount assembly to the display screen.

Abstract: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.

Abstract: A wafer transportation pod includes a body, a main compartment enclosed by the body, the main compartment to provide a controlled environment, a holding device within the main compartment, the holding device to hold a plurality of semiconductor wafers, a top latching mechanism configured to connect to another pod or a carrier mechanism of an overhead hoist transfer (OHT) system, a bottom latching mechanism configured to connect to another pod, the bottom latching mechanism being similar to the latching mechanism on the carrier.

Abstract: A polymer of suifonated poly(arylene ether)s (PAEs) and a manufacturing method thereof are provided. A main structure of the PAEs has a first side formed by multi-phenyl glycol monomer and a second side formed by multi-phenyl dihalo monomer with an electron-withdrawing group. The glycol monomer and the dihalo monomer are reacted with each other by a nucleophilic displacement reaction, so as to form the main structure of the PAEs. A film made of the PAEs has a better size stability under a high water uptake.

Abstract: A light source module and a light-emitting control method are disclosed. The light source module includes light-emitting devices which periodically emit light by a period. The period includes time intervals corresponding to the light-emitting devices, respectively. The light-emitting control method includes driving each light-emitting device to emit light by an individual main power during its corresponding time interval, and driving each light-emitting device to emit light by a corresponding auxiliary power during each of the time intervals other than its corresponding time interval.

Abstract: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.

Abstract: Examples of the present disclosure may include methods, systems, and computer readable media with executable instructions. An example method for providing a patient information interface can include accessing patient health record (PHR) information for a particular patient, and referencing medical care guideline information. A medical process associated with the particular patient is determined based on the PHR information and medical care guideline information, and context information associated with the particular patient and/or a healthcare system is received in a medical process-aware manner to a context model implemented on a computing system, including clinical, logistical and operational information. Context aware information is presented, via an output device of the computing system based on the determined medical process and context information.

Abstract: A polymer of sulfonated poly(arylene ether)s (PAEs) and a manufacturing method thereof are provided. A main structure of the PAEs has a first side formed by multi-phenyl glycol monomer and a second side formed by multi-phenyl dihalo monomer with an electron-withdrawing group. The glycol monomer and the dihalo monomer are reacted with each other by a nucleophilic displacement reaction, so as to form the main structure of the PAEs. A film made of the PAEs has a better size stability under a high water uptake.

Abstract: In a reflow process, a plurality of solder bumps between a first workpiece and a second workpiece is melted. During a solidification stage of the plurality of solder bumps, the plurality of solder bumps is cooled at a first cooling rate. After the solidification stage is finished, the plurality of solder bumps is cooled at a second cooling rate lower than the first cooling rate.