Abstract: Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprises double dual slot load locks constructed at same location. Such system may be used for processing substrates for semiconductor manufacturing.

Abstract: In one embodiment, a slit valve is provided that is adapted to seal an opening and that includes a valve housing having a first wall, a first opening formed in the first wall, a second wall and a second opening formed in the second wall. The slit valve also includes a closure member having a sealing portion adapted to contact the second wall and seal the second opening, and a bracing member moveable relative to the sealing portion and adapted to contact the first wall. The slit valve further includes at least one actuating mechanism adapted to (1) move the sealing portion toward the second wall and into contact with the second wall; and (2) move the bracing member away from the sealing portion and into contact with the first wall so as to brace the sealing portion against the second wall. Numerous other aspects are provided.

Abstract: A method and system for testing one or more large substrates are provided. In one or more embodiments, the system includes a testing chamber having a substrate table disposed therein. The substrate table is adapted to move a substrate within the testing chamber in various directions. More particularly, the substrate table includes a first stage movable in a first direction, and a second stage movable in a second direction, wherein each of the stages moves in an X-direction, Y-direction or both X and Y directions. The system further includes a load lock chamber at least partially disposed below the testing chamber, and a transfer chamber coupled to the load lock chamber and the testing chamber. In one or more embodiments, the transfer chamber includes a robot disposed therein which is adapted to transfer substrates between the load lock chamber and the testing chamber.

Abstract: A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.

Abstract: A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by flexible side walls. The flexible suspension minimizes mechanical stress due to thermal expansion of the gas distribution plate. In another aspect, the suspension provides thermal isolation between the gas distribution plate and other components of the chamber.

Abstract: A transfer chamber for a substrate processing tool includes a main body having side walls adapted to couple to at least one processing chamber and at least one load lock chamber. The main body houses at least a portion of a robot adapted to transport a substrate between the processing chamber and the load lock chamber. A lid couples to and seals a top of the main body of the transfer chamber. The transfer chamber also has a domed bottom adapted to couple to and to seal a bottom portion of the main body of the transfer chamber.

Abstract: One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as wall as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

Abstract: A substrate storage cassette and a method of orienting a substrate disposed therein are provided. In one embodiment, the substrate storage cassette includes a plurality of flanges pairs disposed between a first lateral sidewall coupled in a spaced-apart relation to a second lateral sidewall. Each of the flange pairs adapted to support a substrate thereon. At least a first alignment feature disposed between the flange pair and adapted to mate with an orientation feature of the substrate when the substrate is in a predefined orientation.

Abstract: A system and method for processing large area substrates is provided. In one embodiment, a processing system includes a transfer chamber having at least one processing chamber and a substrate staging system coupled thereto. The staging system includes a load lock chamber having a first port coupled to the transfer chamber and a heat treating station coupled to a second port of the load lock chamber. A load lock robot is disposed in the load lock chamber to facilitate transfer between the heat treating station and the load lock chamber.

Abstract: A method and apparatus for cleaning a CVD chamber including optoelectronic detection of the completion or endpoint of the cleaning procedure once a ratio of emission lines reaches a threshold value. The method comprises the steps of: providing a plasma of a cleaning gas into the chamber and creating a plasma from the cleaning gas. The intensity of emission lines of the cleaning gas and of at least one background gas in the chamber are monitored. A ratio of the intensity of the cleaning gas emission line to the intensity of the background gas emission line is determined and monitored as a function of time. The determined ratio is compared to a preset threshold calibration value. The flow of gas is controlled based on the comparing step. The apparatus includes a cleaning gas supply with a valved inlet providing an entrance to the interior of the chamber for passing cleaning gas to the interior of the chamber. A detector having an optical input is disposed for sensing the electromagnetic radiation.

Abstract: In one embodiment, a slit valve is provided that is adapted to seal an opening and that includes a valve housing having a first wall, a first opening formed in the first wall, a second wall and a second opening formed in the second wall. The slit valve also includes a closure member having a sealing portion adapted to contact the second wall and seal the second opening, and a bracing member moveable relative to the sealing portion and adapted to contact the first wall. The slit valve further includes at least one actuating mechanism adapted to (1) move the sealing portion toward the second wall and into contact with the second wall; and (2) move the bracing member away from the sealing portion and into contact with the first wall so as to brace the sealing portion against the second wall. Numerous other aspects are provided.

Abstract: A method of flexibly mounting a gas distribution plate to the back wall of a gas inlet manifold for a plasma chamber. A perforated gas distribution plate is suspended from the back wall by flexible side walls. The flexible suspension minimizes mechanical stress due to thermal expansion of the gas distribution plate.

Abstract: A method and apparatus for supporting a substrate is generally provided. In one aspect, an apparatus for supporting a substrate includes a support plate having a first body disposed proximate thereto. A first pushing member is radially coupled to the first body and adapted to urge the substrate in a first direction parallel to the support plate when the first body rotates. In another aspect, a load lock chamber having a substrate support that supports a substrate placed thereon includes a cooling plate that is moved to actuate at least one alignment mechanism. The alignment mechanism includes a pushing member that urges the substrate in a first direction towards a center of the support. The pushing member may additionally rotate about an axis perpendicular to the first direction.

Abstract: A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.

Abstract: A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes formed therethrough that align with a plurality of apertures formed through the diffuser plate, where the apertures each have a greater sectional area than the holes in the tuning plate. Each aperture is aligned with a respective hole to define gas passages through the gas distribution plate assembly. The tuning plate may be interchanged with a replacement tuning plate to change the gas flow characteristics through the gas distribution plate assembly.

Abstract: A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by flexible side walls. The flexible suspension minimizes mechanical stress due to thermal expansion of the gas distribution plate. In another aspect, the suspension provides thermal isolation between the gas distribution plate and other components of the chamber.

Abstract: Generally, an end effector assembly for a substrate transfer robot is provided. In one embodiment, an end effector assembly for supporting a quadrilateral substrate during substrate transfer includes an end effector having an inner edge support disposed on a first end and a first outer edge support disposed on a distal end. The first end of the end effector is adapted for coupling to a robot linkage. The first inner edge support has a face that is oriented parallel to and facing the face of the first outer edge support. This configuration of edge supports captures the substrate to the end effector thereby minimizing substrate slippage during transfer. In another embodiment, lateral guides may be utilized to further enhance capturing the substrate along the edges of the substrate open between the inner and outer edge supports.

Abstract: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.

Abstract: A substrate storage cassette and a method of orienting a substrate disposed therein are provided. In one embodiment, the substrate storage cassette includes a plurality of flanges pairs disposed between a first lateral sidewall coupled in a spaced-apart relation to a second lateral sidewall. Each of the flange pairs adapted to support a substrate thereon. At least a first alignment feature disposed between the flange pair and adapted to mate with an orientation feature of the substrate when the substrate is in a predefined orientation.

Abstract: Provided herein is a lid assembly for chemical vapor deposition (CVD) process chamber, comprising a moveable lid, two linear guide rollers connected to the lid, one or more linear lifting actuators, and a rotation actuator connected to the axis of the lid. This lid assembly may be used for opening/closing process chamber as well as wet-cleaning process chamber in chemical vapor deposition.