Abstract: A magnetic drive system for moving a substrate transfer shuttle along a linear path between chambers in a semiconductor fabrication apparatus. A rack with rack magnets is secured to the shuttle, and a rotatable pinion with pinion magnets is positioned adjacent the rack so that the pinion magnets can magnetically engage the rack magnets. Thus, rotation of the pinion will cause the shuttle to move along the linear path. The magnets may be oriented with a helix angle between their primary axis and the axis of rotation of the pinion. One rack and one pinion are located on each side of the shuttle. A set of lower guide rollers supports the shuttle, and a set of upper guide rollers prevents the shuttle from lifting off the lower guide rollers.

Abstract: The present invention allows large glass substrates to be rapidly moved from one processing station to another. Such movement occurs such that drives in different chambers are synchronized to move the glass substrates on shuttles at appropriate times. In systems according to the invention, at least a first and second chamber are provided. Typically, the first chamber is a load lock and the second chamber is a processing chamber. A substrate transfer shuttle is used to move substrate along a guide path defined by, e.g., guide rollers. Drive mechanisms are employed for most chambers to drive the shuttle along associated portions of the path. A control system is provided which powers the drive mechanism for the first chamber to drive the substrate transfer shuttle from a first position toward a second position and through an intermediate position. At the intermediate position, the substrate transfer shuttle begins to engage and induce movement of the drive mechanism for the second chamber.

Abstract: A method of transferring and processing a substrate in an evacuable chamber which is located adjacent a process chamber and back-to-back process chambers, and other combinations of evacuable chambers and process chambers. The method includes the use of various isolation valves disposed between adjacent chambers, as well as gas flow valves and vacuum valves. By controlling the positions of the valves, the flow of gas to and from the different chambers can be controlled.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: The present invention allows large glass substrates to be rapidly moved from one processing station to another. Such movement occurs such that drives in different chambers are synchronized to move the glass substrates on shuttles at appropriate times. In systems according to the invention, at least a first and second chamber are provided. Typically, the first chamber is a load lock and the second chamber is a processing chamber. A substrate transfer shuttle is used to move substrate along a guide path defined by, e.g., guide rollers. Drive mechanisms are employed for most chambers to drive the shuttle along associated portions of the path. A control system is provided which powers the drive mechanism for the first chamber to drive the substrate transfer shuttle from a first position toward a second position and through an intermediate position. At the intermediate position, the substrate transfer shuttle begins to engage and induce movement of the drive mechanism for the second chamber.

Abstract: A magnetic drive system for moving a substrate transfer shuttle along a linear path between chambers in a semiconductor fabrication apparatus. A rack with rack magnets is secured to the shuttle, and a rotatable pinion with pinion magnets is positioned adjacent the rack so that the pinion magnets can magnetically engage the rack magnets. Thus, rotation of the pinion will cause the shuttle to move along the linear path. The magnets may be oriented with a helix angle between their primary axis and the axis of rotation of the pinion. One rack and one pinion are located on each side of the shuttle. A set of lower guide rollers supports the shuttle, and a set of upper guide rollers prevents the shuttle from lifting off the lower guide rollers.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: A substrate processing system can include an evacuable chamber adjacent a process chamber and back-to-back process chambers, or other combinations of evacuable chambers and process chambers. The processing system includes various isolation valves disposed between adjacent chambers, as well as gas flow valves and vacuum valves. A controller controls the respective positions of the various gas flow valves and vacuum valves depending, in part, on whether the various isolation valves are in their open or sealed positions. By controlling the positions of the valves, the flow of gas to and from the different chambers can be controlled, for example, to help maximize throughput, increase efficiency, and reduce the likelihood of cross-contamination between chambers.

Abstract: An impedance matching network for an RF coupled plasma reactor having RF excitation apparatus receiving RF power through the impedance matching network from an RF generator for producing a plasma in the reactor has at least one capacitor connected to the output of the RF generator and having a capacitance value providing an impedance match to the plasma impedance during a steady state of the plasma, at least a first rapidly tunable capacitor connected in parallel with the one capacitor, the rapidly tunable capacitor being rapidly switchable between a high capacitance value providing a match to the plasma impedance during the onset of plasma ignition and a lesser minimum capacitance value, and a controller for rapidly switching the rapidly tunable capacitor from the high to the lesser capacitance value upon reaching the plasma steady state.

Abstract: A temperature measurement system for use in a thin film deposition system is based on optical pyrometry on the backside of the deposition substrate. The backside of the deposition substrate is viewed through a channel formed in the susceptor of the deposition system. Radiation from the backside of the deposition substrate passes through an infrared window and to an infrared detector. The signal output by the infrared detector is coupled to electronics for calculating the temperature of the deposition substrate in accordance with blackbody radiation equations. A tube-like lightguide shields the infrared detector from background radiation produced by the heated susceptor.

Abstract: A temperature measurement system for use in a thin film deposition system is based on optical pyrometry on the backside of the deposition substrate. The backside of the deposition substrate is viewed through a channel formed in the susceptor of the deposition system. Radiation from the backside of the deposition substrate passes through an infrared window and to an infrared detector. The signal output by the infrared detector is coupled to electronics for calculating the temperature of the deposition substrate in accordance with blackbody radiation equations. A tube-like lightguide shields the infrared detector from background radiation produced by the heated susceptor.

Abstract: Radiation detectors and method measure the emissivity of a remote, heated semiconductor wafer in the presence of ambient radiation. Incident radiation within a selected waveband from a controlled source intermittently radiates the remote wafer, and reflected radiation therefrom is detected in synchronism with the intermittent incident radiation to yield output indications of emissivity of the wafer under varying processing conditions. The temperature of the wafer is monitored by another radiation detector (or detectors) operating substantially within the same selected waveband, and the temperature indications thus derived are corrected in response to the output indications of emissivity to provide indications of the true temperature of the wafer.